JPWO2023153035A5 - - Google Patents

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Publication number
JPWO2023153035A5
JPWO2023153035A5 JP2023580075A JP2023580075A JPWO2023153035A5 JP WO2023153035 A5 JPWO2023153035 A5 JP WO2023153035A5 JP 2023580075 A JP2023580075 A JP 2023580075A JP 2023580075 A JP2023580075 A JP 2023580075A JP WO2023153035 A5 JPWO2023153035 A5 JP WO2023153035A5
Authority
JP
Japan
Prior art keywords
layer
nitride
based semiconductor
emitting device
side semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023580075A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023153035A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/041910 external-priority patent/WO2023153035A1/ja
Publication of JPWO2023153035A1 publication Critical patent/JPWO2023153035A1/ja
Publication of JPWO2023153035A5 publication Critical patent/JPWO2023153035A5/ja
Pending legal-status Critical Current

Links

JP2023580075A 2022-02-14 2022-11-10 Pending JPWO2023153035A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022020111 2022-02-14
PCT/JP2022/041910 WO2023153035A1 (ja) 2022-02-14 2022-11-10 窒化物系半導体発光素子

Publications (2)

Publication Number Publication Date
JPWO2023153035A1 JPWO2023153035A1 (https=) 2023-08-17
JPWO2023153035A5 true JPWO2023153035A5 (https=) 2024-10-23

Family

ID=87564058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023580075A Pending JPWO2023153035A1 (https=) 2022-02-14 2022-11-10

Country Status (4)

Country Link
US (1) US20240396306A1 (https=)
JP (1) JPWO2023153035A1 (https=)
CN (1) CN118679654A (https=)
WO (1) WO2023153035A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025135006A1 (ja) * 2023-12-19 2025-06-26 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体レーザ素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101254817B1 (ko) * 2007-04-20 2013-04-15 엘지전자 주식회사 반도체 레이저 다이오드
JP5316210B2 (ja) * 2009-05-11 2013-10-16 住友電気工業株式会社 窒化物半導体発光素子
JP5198390B2 (ja) * 2009-08-21 2013-05-15 シャープ株式会社 窒化物半導体素子及びその製造方法、並びに、半導体装置
JP2011146650A (ja) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd ＧａＮ系半導体発光素子およびその製造方法

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