JPWO2023106083A5 - - Google Patents

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Publication number
JPWO2023106083A5
JPWO2023106083A5 JP2023566208A JP2023566208A JPWO2023106083A5 JP WO2023106083 A5 JPWO2023106083 A5 JP WO2023106083A5 JP 2023566208 A JP2023566208 A JP 2023566208A JP 2023566208 A JP2023566208 A JP 2023566208A JP WO2023106083 A5 JPWO2023106083 A5 JP WO2023106083A5
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JP
Japan
Prior art keywords
membered ring
ring structures
electrode layer
semiconductor device
silicon oxide
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Application number
JP2023566208A
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English (en)
Japanese (ja)
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JP7647933B2 (ja
JPWO2023106083A1 (https=
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Priority claimed from PCT/JP2022/043131 external-priority patent/WO2023106083A1/ja
Publication of JPWO2023106083A1 publication Critical patent/JPWO2023106083A1/ja
Publication of JPWO2023106083A5 publication Critical patent/JPWO2023106083A5/ja
Application granted granted Critical
Publication of JP7647933B2 publication Critical patent/JP7647933B2/ja
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JP2023566208A 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路 Active JP7647933B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021199383 2021-12-08
JP2021199383 2021-12-08
PCT/JP2022/043131 WO2023106083A1 (ja) 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路

Publications (3)

Publication Number Publication Date
JPWO2023106083A1 JPWO2023106083A1 (https=) 2023-06-15
JPWO2023106083A5 true JPWO2023106083A5 (https=) 2024-07-30
JP7647933B2 JP7647933B2 (ja) 2025-03-18

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ID=86730285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023566208A Active JP7647933B2 (ja) 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路

Country Status (4)

Country Link
US (1) US20240304660A1 (https=)
JP (1) JP7647933B2 (https=)
CN (1) CN118382899A (https=)
WO (1) WO2023106083A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4916715B2 (ja) * 2005-12-21 2012-04-18 富士通株式会社 電子部品
US9178006B2 (en) 2014-02-10 2015-11-03 Intermolecular, Inc. Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
WO2021166880A1 (ja) * 2020-02-17 2021-08-26 株式会社村田製作所 半導体装置及びモジュール

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