JP2001284342A5 - - Google Patents
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- Publication number
- JP2001284342A5 JP2001284342A5 JP2001013099A JP2001013099A JP2001284342A5 JP 2001284342 A5 JP2001284342 A5 JP 2001284342A5 JP 2001013099 A JP2001013099 A JP 2001013099A JP 2001013099 A JP2001013099 A JP 2001013099A JP 2001284342 A5 JP2001284342 A5 JP 2001284342A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- pixel electrode
- hole
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 60
- 238000002161 passivation Methods 0.000 claims 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 20
- -1 siloxane structure Chemical group 0.000 claims 12
- 238000004528 spin coating Methods 0.000 claims 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims 10
- 239000010410 layer Substances 0.000 claims 9
- 239000011229 interlayer Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001013099A JP2001284342A (ja) | 2000-01-25 | 2001-01-22 | 電気光学装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000016309 | 2000-01-25 | ||
| JP2000-16309 | 2000-01-25 | ||
| JP2001013099A JP2001284342A (ja) | 2000-01-25 | 2001-01-22 | 電気光学装置の作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004315626A Division JP2005148728A (ja) | 2000-01-25 | 2004-10-29 | 集積回路 |
| JP2004315625A Division JP4963158B2 (ja) | 2000-01-25 | 2004-10-29 | 表示装置の作製方法、電気光学装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001284342A JP2001284342A (ja) | 2001-10-12 |
| JP2001284342A5 true JP2001284342A5 (https=) | 2005-07-07 |
Family
ID=26584138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001013099A Withdrawn JP2001284342A (ja) | 2000-01-25 | 2001-01-22 | 電気光学装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001284342A (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100370491C (zh) | 2002-12-10 | 2008-02-20 | 株式会社半导体能源研究所 | 发光装置及其制作方法 |
| KR100528326B1 (ko) * | 2002-12-31 | 2005-11-15 | 삼성전자주식회사 | 가요성 기판 상에 보호캡을 구비하는 박막 반도체 소자 및 이를 이용하는 전자장치 및 그 제조방법 |
| CN1577796A (zh) | 2003-07-10 | 2005-02-09 | 精工爱普生株式会社 | 电子器件的制造方法和半导体器件的制造方法 |
| US7566640B2 (en) | 2003-12-15 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device |
| CN1697187B (zh) | 2003-12-19 | 2011-05-04 | 株式会社半导体能源研究所 | 半导体集成电路、半导体器件和半导体集成电路的制造方法 |
| US7566010B2 (en) | 2003-12-26 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Securities, chip mounting product, and manufacturing method thereof |
| JP2005223034A (ja) * | 2004-02-04 | 2005-08-18 | Sony Corp | 配線構造及びパネル型表示装置 |
| CN100502018C (zh) | 2004-02-06 | 2009-06-17 | 株式会社半导体能源研究所 | 薄膜集成电路的制造方法和元件基片 |
| EP1793266B1 (en) | 2005-12-05 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration |
| JP2007242895A (ja) * | 2006-03-08 | 2007-09-20 | Mitsubishi Electric Corp | 薄膜トランジスタ装置及びその製造方法 |
| WO2008142911A1 (en) * | 2007-05-18 | 2008-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9224759B2 (en) | 2010-12-20 | 2015-12-29 | Japan Display Inc. | Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus |
| US8830436B2 (en) | 2010-12-24 | 2014-09-09 | Japan Display West Inc. | Pixel structure, display device, and electronic apparatus |
| JP6044223B2 (ja) * | 2012-09-20 | 2016-12-14 | セイコーエプソン株式会社 | 光電変換装置、医療機器および光電変換装置の製造方法 |
| CN104570455B (zh) * | 2014-12-19 | 2017-06-27 | 深圳市华星光电技术有限公司 | 一种液晶显示面板的制作方法 |
| KR102794829B1 (ko) * | 2016-08-18 | 2025-04-11 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조방법 |
| KR102791286B1 (ko) * | 2016-08-30 | 2025-04-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN111146215B (zh) * | 2020-02-21 | 2022-12-09 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
| CN111725281B (zh) * | 2020-06-12 | 2023-08-04 | 维沃移动通信有限公司 | 显示模组及电子设备 |
-
2001
- 2001-01-22 JP JP2001013099A patent/JP2001284342A/ja not_active Withdrawn
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