JP7647933B2 - 半導体装置、マッチング回路及びフィルタ回路 - Google Patents

半導体装置、マッチング回路及びフィルタ回路 Download PDF

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Publication number
JP7647933B2
JP7647933B2 JP2023566208A JP2023566208A JP7647933B2 JP 7647933 B2 JP7647933 B2 JP 7647933B2 JP 2023566208 A JP2023566208 A JP 2023566208A JP 2023566208 A JP2023566208 A JP 2023566208A JP 7647933 B2 JP7647933 B2 JP 7647933B2
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Japan
Prior art keywords
electrode layer
dielectric film
layer
semiconductor device
membered ring
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JP2023566208A
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English (en)
Japanese (ja)
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JPWO2023106083A5 (https=
JPWO2023106083A1 (https=
Inventor
是清 伊藤
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G17/00—Structural combinations of capacitors or other devices covered by at least two different main groups of this subclass with other electric elements, not covered by this subclass, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2023566208A 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路 Active JP7647933B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021199383 2021-12-08
JP2021199383 2021-12-08
PCT/JP2022/043131 WO2023106083A1 (ja) 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路

Publications (3)

Publication Number Publication Date
JPWO2023106083A1 JPWO2023106083A1 (https=) 2023-06-15
JPWO2023106083A5 JPWO2023106083A5 (https=) 2024-07-30
JP7647933B2 true JP7647933B2 (ja) 2025-03-18

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Family Applications (1)

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JP2023566208A Active JP7647933B2 (ja) 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路

Country Status (4)

Country Link
US (1) US20240304660A1 (https=)
JP (1) JP7647933B2 (https=)
CN (1) CN118382899A (https=)
WO (1) WO2023106083A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173437A (ja) 2005-12-21 2007-07-05 Fujitsu Ltd 電子部品
US20150228710A1 (en) 2014-02-10 2015-08-13 Elpida Memory, Inc Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications
WO2021166880A1 (ja) 2020-02-17 2021-08-26 株式会社村田製作所 半導体装置及びモジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173437A (ja) 2005-12-21 2007-07-05 Fujitsu Ltd 電子部品
US20150228710A1 (en) 2014-02-10 2015-08-13 Elpida Memory, Inc Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications
WO2021166880A1 (ja) 2020-02-17 2021-08-26 株式会社村田製作所 半導体装置及びモジュール

Also Published As

Publication number Publication date
CN118382899A (zh) 2024-07-23
US20240304660A1 (en) 2024-09-12
WO2023106083A1 (ja) 2023-06-15
JPWO2023106083A1 (https=) 2023-06-15

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