CN118382899A - 半导体装置、匹配电路以及滤波器电路 - Google Patents

半导体装置、匹配电路以及滤波器电路 Download PDF

Info

Publication number
CN118382899A
CN118382899A CN202280081586.1A CN202280081586A CN118382899A CN 118382899 A CN118382899 A CN 118382899A CN 202280081586 A CN202280081586 A CN 202280081586A CN 118382899 A CN118382899 A CN 118382899A
Authority
CN
China
Prior art keywords
electrode layer
membered ring
dielectric film
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280081586.1A
Other languages
English (en)
Chinese (zh)
Inventor
伊藤是清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN118382899A publication Critical patent/CN118382899A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G17/00—Structural combinations of capacitors or other devices covered by at least two different main groups of this subclass with other electric elements, not covered by this subclass, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202280081586.1A 2021-12-08 2022-11-22 半导体装置、匹配电路以及滤波器电路 Pending CN118382899A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-199383 2021-12-08
JP2021199383 2021-12-08
PCT/JP2022/043131 WO2023106083A1 (ja) 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路

Publications (1)

Publication Number Publication Date
CN118382899A true CN118382899A (zh) 2024-07-23

Family

ID=86730285

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280081586.1A Pending CN118382899A (zh) 2021-12-08 2022-11-22 半导体装置、匹配电路以及滤波器电路

Country Status (4)

Country Link
US (1) US20240304660A1 (https=)
JP (1) JP7647933B2 (https=)
CN (1) CN118382899A (https=)
WO (1) WO2023106083A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4916715B2 (ja) * 2005-12-21 2012-04-18 富士通株式会社 電子部品
US9178006B2 (en) 2014-02-10 2015-11-03 Intermolecular, Inc. Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
WO2021166880A1 (ja) * 2020-02-17 2021-08-26 株式会社村田製作所 半導体装置及びモジュール

Also Published As

Publication number Publication date
JP7647933B2 (ja) 2025-03-18
US20240304660A1 (en) 2024-09-12
WO2023106083A1 (ja) 2023-06-15
JPWO2023106083A1 (https=) 2023-06-15

Similar Documents

Publication Publication Date Title
US10468187B2 (en) Thin-film ceramic capacitor having capacitance forming portions separated by separation slit
US10290425B2 (en) Composite electronic component
US8760842B2 (en) Flexible multilayer type thin film capacitor and embedded printed circuit board using the same
US20220384113A1 (en) Capacitor
US10410793B2 (en) Thin film capacitor and method of manufacturing the same
JP5299158B2 (ja) 誘電体薄膜素子
JP4499548B2 (ja) キャパシタ部品
US10720280B2 (en) Thin-film ceramic capacitor having capacitance forming portions separated by separation slit
US10395842B2 (en) Thin film capacitor and manufacturing method thereof
US10141115B2 (en) Thin film capacitor including alternatively disposed dielectric layers having different thicknesses
JP4793125B2 (ja) 集積化受動素子及び集積化受動素子内蔵多層配線基板
JP7563591B2 (ja) 半導体装置、マッチング回路及びフィルタ回路
US10278290B2 (en) Electronic component embedded substrate
CN118382899A (zh) 半导体装置、匹配电路以及滤波器电路
US10629373B2 (en) Thin film capacitor
KR102712634B1 (ko) 박막 커패시터
JP4864313B2 (ja) 薄膜キャパシタ基板、その製造方法、及び、半導体装置
CN120051843A (zh) 单层电容器
JPH07245233A (ja) 薄膜コンデンサ
CN110024066A (zh) 薄膜电容器
JP3987702B2 (ja) 薄膜コンデンサ
JP2002164258A (ja) 薄膜コンデンサおよびコンデンサ基板
CN121264190A (zh) 半导体装置
JP2002260957A (ja) 薄膜コンデンサおよびコンデンサ基板

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination