JPWO2023106083A1 - - Google Patents

Info

Publication number
JPWO2023106083A1
JPWO2023106083A1 JP2023566208A JP2023566208A JPWO2023106083A1 JP WO2023106083 A1 JPWO2023106083 A1 JP WO2023106083A1 JP 2023566208 A JP2023566208 A JP 2023566208A JP 2023566208 A JP2023566208 A JP 2023566208A JP WO2023106083 A1 JPWO2023106083 A1 JP WO2023106083A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023566208A
Other languages
Japanese (ja)
Other versions
JP7647933B2 (ja
JPWO2023106083A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023106083A1 publication Critical patent/JPWO2023106083A1/ja
Publication of JPWO2023106083A5 publication Critical patent/JPWO2023106083A5/ja
Application granted granted Critical
Publication of JP7647933B2 publication Critical patent/JP7647933B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • H10D1/692Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G17/00Structural combinations of capacitors or other devices covered by at least two different main groups of this subclass with other electric elements, not covered by this subclass, e.g. RC combinations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/04Frequency selective two-port networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/28Impedance matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2023566208A 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路 Active JP7647933B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021199383 2021-12-08
JP2021199383 2021-12-08
PCT/JP2022/043131 WO2023106083A1 (ja) 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路

Publications (3)

Publication Number Publication Date
JPWO2023106083A1 true JPWO2023106083A1 (https=) 2023-06-15
JPWO2023106083A5 JPWO2023106083A5 (https=) 2024-07-30
JP7647933B2 JP7647933B2 (ja) 2025-03-18

Family

ID=86730285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023566208A Active JP7647933B2 (ja) 2021-12-08 2022-11-22 半導体装置、マッチング回路及びフィルタ回路

Country Status (4)

Country Link
US (1) US20240304660A1 (https=)
JP (1) JP7647933B2 (https=)
CN (1) CN118382899A (https=)
WO (1) WO2023106083A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173437A (ja) * 2005-12-21 2007-07-05 Fujitsu Ltd 電子部品
US20150228710A1 (en) * 2014-02-10 2015-08-13 Elpida Memory, Inc Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications
WO2021166880A1 (ja) * 2020-02-17 2021-08-26 株式会社村田製作所 半導体装置及びモジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173437A (ja) * 2005-12-21 2007-07-05 Fujitsu Ltd 電子部品
US20150228710A1 (en) * 2014-02-10 2015-08-13 Elpida Memory, Inc Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications
WO2021166880A1 (ja) * 2020-02-17 2021-08-26 株式会社村田製作所 半導体装置及びモジュール

Also Published As

Publication number Publication date
JP7647933B2 (ja) 2025-03-18
CN118382899A (zh) 2024-07-23
US20240304660A1 (en) 2024-09-12
WO2023106083A1 (ja) 2023-06-15

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