JPWO2023106083A1 - - Google Patents
Info
- Publication number
- JPWO2023106083A1 JPWO2023106083A1 JP2023566208A JP2023566208A JPWO2023106083A1 JP WO2023106083 A1 JPWO2023106083 A1 JP WO2023106083A1 JP 2023566208 A JP2023566208 A JP 2023566208A JP 2023566208 A JP2023566208 A JP 2023566208A JP WO2023106083 A1 JPWO2023106083 A1 JP WO2023106083A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G17/00—Structural combinations of capacitors or other devices covered by at least two different main groups of this subclass with other electric elements, not covered by this subclass, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021199383 | 2021-12-08 | ||
| JP2021199383 | 2021-12-08 | ||
| PCT/JP2022/043131 WO2023106083A1 (ja) | 2021-12-08 | 2022-11-22 | 半導体装置、マッチング回路及びフィルタ回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023106083A1 true JPWO2023106083A1 (https=) | 2023-06-15 |
| JPWO2023106083A5 JPWO2023106083A5 (https=) | 2024-07-30 |
| JP7647933B2 JP7647933B2 (ja) | 2025-03-18 |
Family
ID=86730285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023566208A Active JP7647933B2 (ja) | 2021-12-08 | 2022-11-22 | 半導体装置、マッチング回路及びフィルタ回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240304660A1 (https=) |
| JP (1) | JP7647933B2 (https=) |
| CN (1) | CN118382899A (https=) |
| WO (1) | WO2023106083A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007173437A (ja) * | 2005-12-21 | 2007-07-05 | Fujitsu Ltd | 電子部品 |
| US20150228710A1 (en) * | 2014-02-10 | 2015-08-13 | Elpida Memory, Inc | Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications |
| WO2021166880A1 (ja) * | 2020-02-17 | 2021-08-26 | 株式会社村田製作所 | 半導体装置及びモジュール |
-
2022
- 2022-11-22 JP JP2023566208A patent/JP7647933B2/ja active Active
- 2022-11-22 WO PCT/JP2022/043131 patent/WO2023106083A1/ja not_active Ceased
- 2022-11-22 CN CN202280081586.1A patent/CN118382899A/zh active Pending
-
2024
- 2024-05-16 US US18/666,087 patent/US20240304660A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007173437A (ja) * | 2005-12-21 | 2007-07-05 | Fujitsu Ltd | 電子部品 |
| US20150228710A1 (en) * | 2014-02-10 | 2015-08-13 | Elpida Memory, Inc | Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications |
| WO2021166880A1 (ja) * | 2020-02-17 | 2021-08-26 | 株式会社村田製作所 | 半導体装置及びモジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7647933B2 (ja) | 2025-03-18 |
| CN118382899A (zh) | 2024-07-23 |
| US20240304660A1 (en) | 2024-09-12 |
| WO2023106083A1 (ja) | 2023-06-15 |
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