JPWO2022255121A5 - - Google Patents

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Publication number
JPWO2022255121A5
JPWO2022255121A5 JP2023525724A JP2023525724A JPWO2022255121A5 JP WO2022255121 A5 JPWO2022255121 A5 JP WO2022255121A5 JP 2023525724 A JP2023525724 A JP 2023525724A JP 2023525724 A JP2023525724 A JP 2023525724A JP WO2022255121 A5 JPWO2022255121 A5 JP WO2022255121A5
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JP
Japan
Prior art keywords
electrode
piezoelectric element
piezoelectric
film
element according
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JP2023525724A
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English (en)
Japanese (ja)
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JP7803340B2 (ja
JPWO2022255121A1 (https=
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Priority claimed from PCT/JP2022/020869 external-priority patent/WO2022255121A1/ja
Publication of JPWO2022255121A1 publication Critical patent/JPWO2022255121A1/ja
Publication of JPWO2022255121A5 publication Critical patent/JPWO2022255121A5/ja
Application granted granted Critical
Publication of JP7803340B2 publication Critical patent/JP7803340B2/ja
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JP2023525724A 2021-06-03 2022-05-19 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ Active JP7803340B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021093593 2021-06-03
JP2021093593 2021-06-03
PCT/JP2022/020869 WO2022255121A1 (ja) 2021-06-03 2022-05-19 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ

Publications (3)

Publication Number Publication Date
JPWO2022255121A1 JPWO2022255121A1 (https=) 2022-12-08
JPWO2022255121A5 true JPWO2022255121A5 (https=) 2024-06-17
JP7803340B2 JP7803340B2 (ja) 2026-01-21

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ID=84323254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023525724A Active JP7803340B2 (ja) 2021-06-03 2022-05-19 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ

Country Status (6)

Country Link
US (1) US20240244979A1 (https=)
EP (1) EP4350790A4 (https=)
JP (1) JP7803340B2 (https=)
CN (1) CN117426156A (https=)
TW (1) TWI825732B (https=)
WO (1) WO2022255121A1 (https=)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999703B2 (ja) * 1995-12-20 2000-01-17 沖電気工業株式会社 強誘電体薄膜、その形成方法、薄膜形成用塗布液
TW468253B (en) * 1997-01-13 2001-12-11 Hitachi Ltd Semiconductor memory device
JP4811556B2 (ja) * 2004-04-23 2011-11-09 セイコーエプソン株式会社 圧電素子、液体噴射ヘッドおよび液体噴射装置
JP2008294345A (ja) * 2007-05-28 2008-12-04 Seiko Epson Corp 強誘電体メモリ装置の製造方法及び強誘電体メモリ装置
JP2009071113A (ja) * 2007-09-14 2009-04-02 Fujifilm Corp 圧電素子の駆動方法
JP2010192721A (ja) * 2009-02-19 2010-09-02 Fujifilm Corp 圧電素子とその製造方法、及び液体吐出装置
JP2010201830A (ja) * 2009-03-04 2010-09-16 Seiko Epson Corp 液体噴射ヘッド及び液体噴射装置並びに圧電素子
JP2011061118A (ja) * 2009-09-14 2011-03-24 Seiko Epson Corp 圧電素子、液体噴射ヘッドおよび液体噴射装置
TWI407607B (zh) * 2010-01-22 2013-09-01 Hon Hai Prec Ind Co Ltd 壓電元件及其製備方法
JP5776142B2 (ja) * 2010-06-25 2015-09-09 コニカミノルタ株式会社 振動板
JP6128126B2 (ja) * 2012-08-08 2017-05-17 コニカミノルタ株式会社 圧電素子、圧電デバイス、インクジェットヘッドおよびインクジェットプリンタ
JP7107782B2 (ja) * 2017-09-06 2022-07-27 ローム株式会社 圧電素子
CN110890456B (zh) * 2019-12-05 2022-07-19 湖南嘉业达电子有限公司 一种可抑制银迁移的微孔雾化元件及其制备方法

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