JP7803340B2 - 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ - Google Patents

圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ

Info

Publication number
JP7803340B2
JP7803340B2 JP2023525724A JP2023525724A JP7803340B2 JP 7803340 B2 JP7803340 B2 JP 7803340B2 JP 2023525724 A JP2023525724 A JP 2023525724A JP 2023525724 A JP2023525724 A JP 2023525724A JP 7803340 B2 JP7803340 B2 JP 7803340B2
Authority
JP
Japan
Prior art keywords
electrode
piezoelectric
piezoelectric element
film
electrode side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023525724A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022255121A1 (https=
JPWO2022255121A5 (https=
Inventor
裕司 松下
慎太郎 原
秀樹 眞嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Publication of JPWO2022255121A1 publication Critical patent/JPWO2022255121A1/ja
Publication of JPWO2022255121A5 publication Critical patent/JPWO2022255121A5/ja
Application granted granted Critical
Publication of JP7803340B2 publication Critical patent/JP7803340B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14201Structure of print heads with piezoelectric elements
    • B41J2/14233Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/04Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • H10N30/8554Lead-zirconium titanate [PZT] based
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877Conductive materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14201Structure of print heads with piezoelectric elements
    • B41J2/14233Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B41J2002/14258Multi layer thin film type piezoelectric element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • H10D1/682Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
JP2023525724A 2021-06-03 2022-05-19 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ Active JP7803340B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021093593 2021-06-03
JP2021093593 2021-06-03
PCT/JP2022/020869 WO2022255121A1 (ja) 2021-06-03 2022-05-19 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ

Publications (3)

Publication Number Publication Date
JPWO2022255121A1 JPWO2022255121A1 (https=) 2022-12-08
JPWO2022255121A5 JPWO2022255121A5 (https=) 2024-06-17
JP7803340B2 true JP7803340B2 (ja) 2026-01-21

Family

ID=84323254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023525724A Active JP7803340B2 (ja) 2021-06-03 2022-05-19 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ

Country Status (6)

Country Link
US (1) US20240244979A1 (https=)
EP (1) EP4350790A4 (https=)
JP (1) JP7803340B2 (https=)
CN (1) CN117426156A (https=)
TW (1) TWI825732B (https=)
WO (1) WO2022255121A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294345A (ja) 2007-05-28 2008-12-04 Seiko Epson Corp 強誘電体メモリ装置の製造方法及び強誘電体メモリ装置
JP2010201830A (ja) 2009-03-04 2010-09-16 Seiko Epson Corp 液体噴射ヘッド及び液体噴射装置並びに圧電素子
JP2012009661A (ja) 2010-06-25 2012-01-12 Konica Minolta Holdings Inc 圧電素子の製造方法ならびに圧電素子およびそれを用いる振動板
JP2019047114A (ja) 2017-09-06 2019-03-22 ローム株式会社 圧電素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999703B2 (ja) * 1995-12-20 2000-01-17 沖電気工業株式会社 強誘電体薄膜、その形成方法、薄膜形成用塗布液
TW468253B (en) * 1997-01-13 2001-12-11 Hitachi Ltd Semiconductor memory device
JP4811556B2 (ja) * 2004-04-23 2011-11-09 セイコーエプソン株式会社 圧電素子、液体噴射ヘッドおよび液体噴射装置
JP2009071113A (ja) * 2007-09-14 2009-04-02 Fujifilm Corp 圧電素子の駆動方法
JP2010192721A (ja) * 2009-02-19 2010-09-02 Fujifilm Corp 圧電素子とその製造方法、及び液体吐出装置
JP2011061118A (ja) * 2009-09-14 2011-03-24 Seiko Epson Corp 圧電素子、液体噴射ヘッドおよび液体噴射装置
TWI407607B (zh) * 2010-01-22 2013-09-01 Hon Hai Prec Ind Co Ltd 壓電元件及其製備方法
JP6128126B2 (ja) * 2012-08-08 2017-05-17 コニカミノルタ株式会社 圧電素子、圧電デバイス、インクジェットヘッドおよびインクジェットプリンタ
CN110890456B (zh) * 2019-12-05 2022-07-19 湖南嘉业达电子有限公司 一种可抑制银迁移的微孔雾化元件及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294345A (ja) 2007-05-28 2008-12-04 Seiko Epson Corp 強誘電体メモリ装置の製造方法及び強誘電体メモリ装置
JP2010201830A (ja) 2009-03-04 2010-09-16 Seiko Epson Corp 液体噴射ヘッド及び液体噴射装置並びに圧電素子
JP2012009661A (ja) 2010-06-25 2012-01-12 Konica Minolta Holdings Inc 圧電素子の製造方法ならびに圧電素子およびそれを用いる振動板
JP2019047114A (ja) 2017-09-06 2019-03-22 ローム株式会社 圧電素子

Also Published As

Publication number Publication date
JPWO2022255121A1 (https=) 2022-12-08
TW202312522A (zh) 2023-03-16
CN117426156A (zh) 2024-01-19
EP4350790A4 (en) 2024-09-11
WO2022255121A1 (ja) 2022-12-08
US20240244979A1 (en) 2024-07-18
TWI825732B (zh) 2023-12-11
EP4350790A1 (en) 2024-04-10

Similar Documents

Publication Publication Date Title
JP5525143B2 (ja) 圧電薄膜素子及び圧電薄膜デバイス
US8519602B2 (en) Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series
JP5056914B2 (ja) 圧電薄膜素子および圧電薄膜デバイス
Fujii et al. Preparation of (001)-oriented Pb (Zr, Ti) O/sub 3/thin films and their piezoelectric applications
TW202106903A (zh) 膜構造體、壓電體膜及超導體膜
US9620703B2 (en) Piezoelectric thin-film element, piezoelectric sensor and vibration generator
TW200423166A (en) Composition for thin-film capacitor device, high dielectric constant insulator film, thin-film capacitor device, thin-film multilayer capacitor, electronic circuit and electronic device
Fuentes-Fernandez et al. The effect of poling conditions on the performance of piezoelectric energy harvesters fabricated by wet chemistry
Zhu et al. Enhanced ferroelectric properties of highly (100) oriented Pb (Zr 0.52 Ti 0.48) O 3 thick films prepared by chemical solution deposition
Guo et al. Ferroelectric and pyroelectric properties of (Na0. 5Bi0. 5) TiO3–BaTiO3 based trilayered thin films
JP7803340B2 (ja) 圧電素子、液滴吐出ヘッド、強誘電体メモリ及び圧電アクチュエータ
WO2012165110A1 (ja) 強誘電体膜およびそれを備えた圧電素子
CN110271287B (zh) 压电元件以及液体喷出头
Zhu et al. Piezoelectric PZT thick films on LaNiO3 buffered stainless steel foils for flexible device applications
Zhang et al. Effect of LaNiO3 interlayer on electrical properties of Pb (Zr0. 52Ti0. 48) O3/LaNiO3/Pb (Zr0. 52Ti0. 48) O3 composite films
JP4500870B2 (ja) ペロブスカイト型酸化膜の評価方法
JPH104181A (ja) 強誘電体素子及び半導体装置
EP4318619B1 (en) Piezoelectric film, piezoelectric element and method for producing piezoelectric film
JP7700802B2 (ja) 電気機械変換素子、その製造方法及び液体吐出ヘッド
WO2023042704A1 (ja) 圧電素子、圧電アクチュエーター、液滴吐出ヘッド、液滴吐出装置、及び強誘電体メモリ
JPH10270646A (ja) 強誘電体薄膜素子の製造方法及び半導体装置
Ibrahim et al. Fabrication and evaluation of niobium doped lead titanate thin films
Iijima et al. Displacement property of PZT films prepared by CSD method
Fuentes-Fernandez et al. PAPER View Article Online View Journal| View Issue The effect of pol aUniversity of Texas at Dallas, 800 W. Cam bTexas Micro Power Inc., 7920 Beltline Rd
Yimnirun Roles of nano-domains on uniaxial stress dependence of dielectric properties of ferroelectric ceramics

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240607

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250326

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251028

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251121

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251222

R150 Certificate of patent or registration of utility model

Ref document number: 7803340

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150