JPWO2022215157A1 - - Google Patents

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Publication number
JPWO2022215157A1
JPWO2022215157A1 JP2022556246A JP2022556246A JPWO2022215157A1 JP WO2022215157 A1 JPWO2022215157 A1 JP WO2022215157A1 JP 2022556246 A JP2022556246 A JP 2022556246A JP 2022556246 A JP2022556246 A JP 2022556246A JP WO2022215157 A1 JPWO2022215157 A1 JP WO2022215157A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022556246A
Other languages
Japanese (ja)
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JPWO2022215157A5 (https=
JP7381145B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed filed Critical
Publication of JPWO2022215157A1 publication Critical patent/JPWO2022215157A1/ja
Publication of JPWO2022215157A5 publication Critical patent/JPWO2022215157A5/ja
Application granted granted Critical
Publication of JP7381145B2 publication Critical patent/JP7381145B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0036—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Databases & Information Systems (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2022556246A 2021-04-06 2021-04-06 メモリ素子を有する半導体装置 Active JP7381145B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/014601 WO2022215157A1 (ja) 2021-04-06 2021-04-06 メモリ素子を有する半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022215157A1 true JPWO2022215157A1 (https=) 2022-10-13
JPWO2022215157A5 JPWO2022215157A5 (https=) 2023-03-08
JP7381145B2 JP7381145B2 (ja) 2023-11-15

Family

ID=83450170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022556246A Active JP7381145B2 (ja) 2021-04-06 2021-04-06 メモリ素子を有する半導体装置

Country Status (4)

Country Link
US (1) US12016172B2 (https=)
JP (1) JP7381145B2 (https=)
TW (1) TWI806510B (https=)
WO (1) WO2022215157A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022219696A1 (ja) * 2021-04-13 2022-10-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2024042609A1 (ja) * 2022-08-23 2024-02-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2024079816A1 (ja) * 2022-10-12 2024-04-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2024134770A1 (ja) * 2022-12-20 2024-06-27 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
CN118265288A (zh) * 2022-12-26 2024-06-28 长江存储科技有限责任公司 存储器器件和用于形成存储器器件的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188279A (ja) * 2001-12-14 2003-07-04 Toshiba Corp 半導体メモリ装置およびその製造方法
JP2008147514A (ja) * 2006-12-12 2008-06-26 Renesas Technology Corp 半導体記憶装置
JP2010519770A (ja) * 2007-02-26 2010-06-03 マイクロン テクノロジー， インク． パストランジスタと、垂直読み出し／書き込み有効化トランジスタを含む、キャパシタレスフローティングボディ揮発性メモリセル、およびその製造法とプログラミング法
US20170330623A1 (en) * 2016-05-12 2017-11-16 Korea University Research And Business Foundation Dual gate semiconductor memory device with vertical semiconductor column
US20200135863A1 (en) * 2015-04-29 2020-04-30 Zeno Semiconductor, Inc. MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JPH03171768A (ja) 1989-11-30 1991-07-25 Toshiba Corp 半導体記憶装置
JP3957774B2 (ja) 1995-06-23 2007-08-15 株式会社東芝 半導体装置
US6137128A (en) * 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
JP4919767B2 (ja) 2006-11-10 2012-04-18 株式会社東芝 半導体記憶装置
WO2009090892A1 (ja) * 2008-01-18 2009-07-23 Sharp Kabushiki Kaisha 不揮発性ランダムアクセスメモリ
JP2011165815A (ja) 2010-02-08 2011-08-25 Toshiba Corp 不揮発性半導体記憶装置
US20160013312A1 (en) 2013-03-05 2016-01-14 PS4 Luxco S.A.R.L Semiconductor device and manufacturing method therefor
JP5612237B1 (ja) 2013-05-16 2014-10-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Ｓｇｔを有する半導体装置の製造方法
JP5938529B1 (ja) * 2015-01-08 2016-06-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 柱状半導体装置と、その製造方法
JP6104477B2 (ja) * 2015-04-06 2017-03-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 柱状半導体メモリ装置と、その製造方法
US12048140B2 (en) * 2020-12-25 2024-07-23 Unisantis Electronics Singapore Pte. Ltd. Memory device using semiconductor element
WO2022239099A1 (ja) * 2021-05-11 2022-11-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド メモリ素子を有する半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188279A (ja) * 2001-12-14 2003-07-04 Toshiba Corp 半導体メモリ装置およびその製造方法
JP2008147514A (ja) * 2006-12-12 2008-06-26 Renesas Technology Corp 半導体記憶装置
JP2010519770A (ja) * 2007-02-26 2010-06-03 マイクロン テクノロジー， インク． パストランジスタと、垂直読み出し／書き込み有効化トランジスタを含む、キャパシタレスフローティングボディ揮発性メモリセル、およびその製造法とプログラミング法
US20200135863A1 (en) * 2015-04-29 2020-04-30 Zeno Semiconductor, Inc. MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application
US20170330623A1 (en) * 2016-05-12 2017-11-16 Korea University Research And Business Foundation Dual gate semiconductor memory device with vertical semiconductor column

Also Published As

Publication number Publication date
US12016172B2 (en) 2024-06-18
WO2022215157A1 (ja) 2022-10-13
TWI806510B (zh) 2023-06-21
TW202247351A (zh) 2022-12-01
JP7381145B2 (ja) 2023-11-15
US20220320098A1 (en) 2022-10-06

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