JPWO2022215157A1 - - Google Patents

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Publication number
JPWO2022215157A1
JPWO2022215157A1 JP2022556246A JP2022556246A JPWO2022215157A1 JP WO2022215157 A1 JPWO2022215157 A1 JP WO2022215157A1 JP 2022556246 A JP2022556246 A JP 2022556246A JP 2022556246 A JP2022556246 A JP 2022556246A JP WO2022215157 A1 JPWO2022215157 A1 JP WO2022215157A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022556246A
Other versions
JP7381145B2 (ja
JPWO2022215157A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022215157A1 publication Critical patent/JPWO2022215157A1/ja
Publication of JPWO2022215157A5 publication Critical patent/JPWO2022215157A5/ja
Application granted granted Critical
Publication of JP7381145B2 publication Critical patent/JP7381145B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0036—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Databases & Information Systems (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2022556246A 2021-04-06 2021-04-06 メモリ素子を有する半導体装置 Active JP7381145B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/014601 WO2022215157A1 (ja) 2021-04-06 2021-04-06 メモリ素子を有する半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022215157A1 true JPWO2022215157A1 (ja) 2022-10-13
JPWO2022215157A5 JPWO2022215157A5 (ja) 2023-03-08
JP7381145B2 JP7381145B2 (ja) 2023-11-15

Family

ID=83450170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022556246A Active JP7381145B2 (ja) 2021-04-06 2021-04-06 メモリ素子を有する半導体装置

Country Status (4)

Country Link
US (1) US12016172B2 (ja)
JP (1) JP7381145B2 (ja)
TW (1) TWI806510B (ja)
WO (1) WO2022215157A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022219696A1 (ja) * 2021-04-13 2022-10-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188279A (ja) * 2001-12-14 2003-07-04 Toshiba Corp 半導体メモリ装置およびその製造方法
JP2008147514A (ja) * 2006-12-12 2008-06-26 Renesas Technology Corp 半導体記憶装置
JP2010519770A (ja) * 2007-02-26 2010-06-03 マイクロン テクノロジー， インク． パストランジスタと、垂直読み出し／書き込み有効化トランジスタを含む、キャパシタレスフローティングボディ揮発性メモリセル、およびその製造法とプログラミング法
US20170330623A1 (en) * 2016-05-12 2017-11-16 Korea University Research And Business Foundation Dual gate semiconductor memory device with vertical semiconductor column
US20200135863A1 (en) * 2015-04-29 2020-04-30 Zeno Semiconductor, Inc. MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JPH03171768A (ja) 1989-11-30 1991-07-25 Toshiba Corp 半導体記憶装置
JP3957774B2 (ja) 1995-06-23 2007-08-15 株式会社東芝 半導体装置
US6137128A (en) * 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
JP4919767B2 (ja) * 2006-11-10 2012-04-18 株式会社東芝 半導体記憶装置
US8576628B2 (en) 2008-01-18 2013-11-05 Sharp Kabushiki Kaisha Nonvolatile random access memory
JP2011165815A (ja) 2010-02-08 2011-08-25 Toshiba Corp 不揮発性半導体記憶装置
WO2014136728A1 (ja) * 2013-03-05 2014-09-12 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
WO2014184933A1 (ja) * 2013-05-16 2014-11-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Ｓｇｔを有する半導体装置の製造方法
JP5938529B1 (ja) * 2015-01-08 2016-06-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 柱状半導体装置と、その製造方法
JP6104477B2 (ja) * 2015-04-06 2017-03-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 柱状半導体メモリ装置と、その製造方法
US12048140B2 (en) * 2020-12-25 2024-07-23 Unisantis Electronics Singapore Pte. Ltd. Memory device using semiconductor element
WO2022239099A1 (ja) * 2021-05-11 2022-11-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド メモリ素子を有する半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188279A (ja) * 2001-12-14 2003-07-04 Toshiba Corp 半導体メモリ装置およびその製造方法
JP2008147514A (ja) * 2006-12-12 2008-06-26 Renesas Technology Corp 半導体記憶装置
JP2010519770A (ja) * 2007-02-26 2010-06-03 マイクロン テクノロジー， インク． パストランジスタと、垂直読み出し／書き込み有効化トランジスタを含む、キャパシタレスフローティングボディ揮発性メモリセル、およびその製造法とプログラミング法
US20200135863A1 (en) * 2015-04-29 2020-04-30 Zeno Semiconductor, Inc. MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application
US20170330623A1 (en) * 2016-05-12 2017-11-16 Korea University Research And Business Foundation Dual gate semiconductor memory device with vertical semiconductor column

Also Published As

Publication number Publication date
TWI806510B (zh) 2023-06-21
US12016172B2 (en) 2024-06-18
WO2022215157A1 (ja) 2022-10-13
JP7381145B2 (ja) 2023-11-15
TW202247351A (zh) 2022-12-01
US20220320098A1 (en) 2022-10-06

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