JPWO2022150270A5 - - Google Patents
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- Publication number
- JPWO2022150270A5 JPWO2022150270A5 JP2023539751A JP2023539751A JPWO2022150270A5 JP WO2022150270 A5 JPWO2022150270 A5 JP WO2022150270A5 JP 2023539751 A JP2023539751 A JP 2023539751A JP 2023539751 A JP2023539751 A JP 2023539751A JP WO2022150270 A5 JPWO2022150270 A5 JP WO2022150270A5
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- feature
- depositing
- precursor
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910052750 molybdenum Inorganic materials 0.000 claims description 134
- 239000011733 molybdenum Substances 0.000 claims description 134
- 238000000034 method Methods 0.000 claims description 126
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 93
- 239000002243 precursor Substances 0.000 claims description 65
- 238000000151 deposition Methods 0.000 claims description 57
- -1 molybdenum halide Chemical class 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 150000004767 nitrides Chemical class 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 15
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 14
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical group Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 claims description 12
- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical group [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000003638 chemical reducing agent Substances 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 7
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 4
- DBGPLCIFYUHWKA-UHFFFAOYSA-H hexachloromolybdenum Chemical group Cl[Mo](Cl)(Cl)(Cl)(Cl)Cl DBGPLCIFYUHWKA-UHFFFAOYSA-H 0.000 claims description 4
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims description 2
- 229910019001 CoSi Inorganic materials 0.000 claims description 2
- 229910016006 MoSi Inorganic materials 0.000 claims description 2
- 229910005883 NiSi Inorganic materials 0.000 claims description 2
- 229910019895 RuSi Inorganic materials 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 2
- CNRRZWMERIANGJ-UHFFFAOYSA-N chloro hypochlorite;molybdenum Chemical group [Mo].ClOCl CNRRZWMERIANGJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- HXHQDHKWCRUPKS-UHFFFAOYSA-N fluoro hypofluorite molybdenum Chemical group [Mo].FOF HXHQDHKWCRUPKS-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910015221 MoCl5 Inorganic materials 0.000 claims 2
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163199525P | 2021-01-05 | 2021-01-05 | |
| US63/199,525 | 2021-01-05 | ||
| PCT/US2022/011053 WO2022150270A1 (en) | 2021-01-05 | 2022-01-03 | Molybdenum deposition in features |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024501844A JP2024501844A (ja) | 2024-01-16 |
| JP2024501844A5 JP2024501844A5 (https=) | 2025-03-10 |
| JPWO2022150270A5 true JPWO2022150270A5 (https=) | 2025-03-10 |
Family
ID=82358074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023539751A Pending JP2024501844A (ja) | 2021-01-05 | 2022-01-03 | フィーチャ内でのモリブデン堆積 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240047269A1 (https=) |
| JP (1) | JP2024501844A (https=) |
| KR (1) | KR20230128428A (https=) |
| CN (1) | CN115777140A (https=) |
| TW (1) | TW202240664A (https=) |
| WO (1) | WO2022150270A1 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| KR20250116174A (ko) | 2018-11-19 | 2025-07-31 | 램 리써치 코포레이션 | 텅스텐을 위한 몰리브덴 템플릿들 |
| SG11202108217UA (en) | 2019-01-28 | 2021-08-30 | Lam Res Corp | Deposition of metal films |
| US12334351B2 (en) | 2019-09-03 | 2025-06-17 | Lam Research Corporation | Molybdenum deposition |
| WO2021076636A1 (en) | 2019-10-15 | 2021-04-22 | Lam Research Corporation | Molybdenum fill |
| JP7686761B2 (ja) | 2021-02-23 | 2025-06-02 | ラム リサーチ コーポレーション | ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積 |
| WO2022221210A1 (en) | 2021-04-14 | 2022-10-20 | Lam Research Corporation | Deposition of molybdenum |
| CN115702474A (zh) | 2021-05-14 | 2023-02-14 | 朗姆研究公司 | 高选择性掺杂硬掩模膜 |
| US12417945B2 (en) * | 2022-02-14 | 2025-09-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contact features of semiconductor device and method of forming same |
| US20230323543A1 (en) * | 2022-04-06 | 2023-10-12 | Applied Materials, Inc. | Integrated cleaning and selective molybdenum deposition processes |
| US12577655B2 (en) * | 2022-08-15 | 2026-03-17 | Applied Materials Inc. | Methods for selective molybdenum deposition |
| US20240060175A1 (en) * | 2022-08-19 | 2024-02-22 | Applied Materials, Inc. | Conformal molybdenum deposition |
| TW202436666A (zh) * | 2022-10-21 | 2024-09-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於填充基板上之凹陷特徵之方法及相關結構及設備 |
| TW202438705A (zh) * | 2022-10-28 | 2024-10-01 | 美商蘭姆研究公司 | 選擇性鉬填充 |
| WO2024112420A1 (en) * | 2022-11-22 | 2024-05-30 | Entegris, Inc. | Methods for selective deposition of precursor materials and related devices |
| WO2024215581A1 (en) * | 2023-04-10 | 2024-10-17 | Lam Research Corporation | Blended deposition and etch process for improved gapfill |
| US20240371654A1 (en) * | 2023-05-03 | 2024-11-07 | Applied Materials, Inc. | Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration |
| JPWO2024253146A1 (https=) * | 2023-06-09 | 2024-12-12 | ||
| US20250054812A1 (en) * | 2023-08-10 | 2025-02-13 | Applied Materials, Inc. | Selective bottom-up metal fill/cap on junction silicide by selective metal removal |
| WO2025111176A1 (en) * | 2023-11-21 | 2025-05-30 | Applied Materials, Inc. | Methods for forming molybdenum surfaces with increased diffusion barrier |
| US20250329538A1 (en) * | 2024-04-23 | 2025-10-23 | Applied Materials, Inc. | Selective plasma assisted deposition of a molybdenum silicide |
| US20250372449A1 (en) * | 2024-06-04 | 2025-12-04 | Applied Materials, Inc. | Methods for forming low resistivity contacts |
| US20260101730A1 (en) * | 2024-10-09 | 2026-04-09 | Applied Materials, Inc. | Damage-less hydrogen treatment for molybdenum oxide reduction |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101604054B1 (ko) * | 2009-09-03 | 2016-03-16 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
| JP6913752B2 (ja) * | 2016-12-15 | 2021-08-04 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 核形成のない間隙充填ａｌｄプロセス |
| US20190067003A1 (en) * | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures |
| TWI784036B (zh) * | 2017-08-30 | 2022-11-21 | 荷蘭商Ａｓｍ智慧財產控股公司 | 層形成方法 |
| US10727117B2 (en) * | 2017-11-20 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for manufacturing semiconductor structure |
| KR102709945B1 (ko) * | 2017-11-22 | 2024-09-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 텅스텐 막에서의 결함들을 감소시키거나 제거하는 방법들 |
| US20200131628A1 (en) * | 2018-10-24 | 2020-04-30 | Entegris, Inc. | Method for forming molybdenum films on a substrate |
-
2022
- 2022-01-03 JP JP2023539751A patent/JP2024501844A/ja active Pending
- 2022-01-03 US US18/258,973 patent/US20240047269A1/en active Pending
- 2022-01-03 WO PCT/US2022/011053 patent/WO2022150270A1/en not_active Ceased
- 2022-01-03 CN CN202280005320.9A patent/CN115777140A/zh active Pending
- 2022-01-03 KR KR1020227045707A patent/KR20230128428A/ko active Pending
- 2022-01-04 TW TW111100209A patent/TW202240664A/zh unknown
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