CN115777140A - 特征中的钼沉积 - Google Patents

特征中的钼沉积 Download PDF

Info

Publication number
CN115777140A
CN115777140A CN202280005320.9A CN202280005320A CN115777140A CN 115777140 A CN115777140 A CN 115777140A CN 202280005320 A CN202280005320 A CN 202280005320A CN 115777140 A CN115777140 A CN 115777140A
Authority
CN
China
Prior art keywords
molybdenum
feature
precursor
depositing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280005320.9A
Other languages
English (en)
Chinese (zh)
Inventor
罗郑硕
施卢蒂·维维克·托姆贝尔
谢耀宗
大卫·约瑟夫·曼迪亚
照健·史蒂文·黎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN115777140A publication Critical patent/CN115777140A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN202280005320.9A 2021-01-05 2022-01-03 特征中的钼沉积 Pending CN115777140A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163199525P 2021-01-05 2021-01-05
US63/199,525 2021-01-05
PCT/US2022/011053 WO2022150270A1 (en) 2021-01-05 2022-01-03 Molybdenum deposition in features

Publications (1)

Publication Number Publication Date
CN115777140A true CN115777140A (zh) 2023-03-10

Family

ID=82358074

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280005320.9A Pending CN115777140A (zh) 2021-01-05 2022-01-03 特征中的钼沉积

Country Status (6)

Country Link
US (1) US20240047269A1 (https=)
JP (1) JP2024501844A (https=)
KR (1) KR20230128428A (https=)
CN (1) CN115777140A (https=)
TW (1) TW202240664A (https=)
WO (1) WO2022150270A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
US12417945B2 (en) * 2022-02-14 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact features of semiconductor device and method of forming same
US20230323543A1 (en) * 2022-04-06 2023-10-12 Applied Materials, Inc. Integrated cleaning and selective molybdenum deposition processes
US12577655B2 (en) * 2022-08-15 2026-03-17 Applied Materials Inc. Methods for selective molybdenum deposition
US20240060175A1 (en) * 2022-08-19 2024-02-22 Applied Materials, Inc. Conformal molybdenum deposition
TW202436666A (zh) * 2022-10-21 2024-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於填充基板上之凹陷特徵之方法及相關結構及設備
TW202438705A (zh) * 2022-10-28 2024-10-01 美商蘭姆研究公司 選擇性鉬填充
WO2024112420A1 (en) * 2022-11-22 2024-05-30 Entegris, Inc. Methods for selective deposition of precursor materials and related devices
WO2024215581A1 (en) * 2023-04-10 2024-10-17 Lam Research Corporation Blended deposition and etch process for improved gapfill
US20240371654A1 (en) * 2023-05-03 2024-11-07 Applied Materials, Inc. Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration
JPWO2024253146A1 (https=) * 2023-06-09 2024-12-12
US20250054812A1 (en) * 2023-08-10 2025-02-13 Applied Materials, Inc. Selective bottom-up metal fill/cap on junction silicide by selective metal removal
WO2025111176A1 (en) * 2023-11-21 2025-05-30 Applied Materials, Inc. Methods for forming molybdenum surfaces with increased diffusion barrier
US20250329538A1 (en) * 2024-04-23 2025-10-23 Applied Materials, Inc. Selective plasma assisted deposition of a molybdenum silicide
US20250372449A1 (en) * 2024-06-04 2025-12-04 Applied Materials, Inc. Methods for forming low resistivity contacts
US20260101730A1 (en) * 2024-10-09 2026-04-09 Applied Materials, Inc. Damage-less hydrogen treatment for molybdenum oxide reduction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101604054B1 (ko) * 2009-09-03 2016-03-16 삼성전자주식회사 반도체 소자 및 그 형성방법
JP6913752B2 (ja) * 2016-12-15 2021-08-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 核形成のない間隙充填ａｌｄプロセス
US20190067003A1 (en) * 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
TWI784036B (zh) * 2017-08-30 2022-11-21 荷蘭商Ａｓｍ智慧財產控股公司 層形成方法
US10727117B2 (en) * 2017-11-20 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
KR102709945B1 (ko) * 2017-11-22 2024-09-24 어플라이드 머티어리얼스, 인코포레이티드 텅스텐 막에서의 결함들을 감소시키거나 제거하는 방법들
US20200131628A1 (en) * 2018-10-24 2020-04-30 Entegris, Inc. Method for forming molybdenum films on a substrate

Also Published As

Publication number Publication date
KR20230128428A (ko) 2023-09-05
US20240047269A1 (en) 2024-02-08
TW202240664A (zh) 2022-10-16
WO2022150270A1 (en) 2022-07-14
JP2024501844A (ja) 2024-01-16

Similar Documents

Publication Publication Date Title
CN115777140A (zh) 特征中的钼沉积
US20250323046A1 (en) Molybdenum deposition
TWI863919B (zh) 純金屬膜的沉積
CN110959186B (zh) 在互连金属化中沉积钌层
US12553131B2 (en) Deposition of molybdenum
US9349637B2 (en) Method for void-free cobalt gap fill
JP2023527774A (ja) 低抵抗率の接点および相互接続
JP2022180422A (ja) 金属膜の蒸着
KR20230104071A (ko) 저 저항률 (low resistivity) 콘택트들 및 상호 접속부들
US20250022751A1 (en) Gradient liner in metal fill
US20250183041A1 (en) Low resistance molybdenum deposition for logic source/drain contacts
US20250259894A1 (en) Molybdenum integration and void-free fill
CN119096326A (zh) 金属硅化物触点形成
CN120937115A (zh) 针对改善的间隙填充的混合式沉积和蚀刻工艺
CN118786517A (zh) 用于逻辑源极/漏极触点的低电阻钼沉积
JPWO2023205184A5 (https=)

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination