JPWO2023205184A5 - - Google Patents
Info
- Publication number
- JPWO2023205184A5 JPWO2023205184A5 JP2024561754A JP2024561754A JPWO2023205184A5 JP WO2023205184 A5 JPWO2023205184 A5 JP WO2023205184A5 JP 2024561754 A JP2024561754 A JP 2024561754A JP 2024561754 A JP2024561754 A JP 2024561754A JP WO2023205184 A5 JPWO2023205184 A5 JP WO2023205184A5
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- feature
- layer
- deposition
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263332649P | 2022-04-19 | 2022-04-19 | |
| US63/332,649 | 2022-04-19 | ||
| US202263342039P | 2022-05-13 | 2022-05-13 | |
| US63/342,039 | 2022-05-13 | ||
| US202263375310P | 2022-09-12 | 2022-09-12 | |
| US63/375,310 | 2022-09-12 | ||
| US202263383236P | 2022-11-10 | 2022-11-10 | |
| US63/383,236 | 2022-11-10 | ||
| PCT/US2023/019000 WO2023205184A1 (en) | 2022-04-19 | 2023-04-18 | Molybdenum integration and void-free fill |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2025515282A JP2025515282A (ja) | 2025-05-14 |
| JP2025515282A5 JP2025515282A5 (https=) | 2026-04-22 |
| JPWO2023205184A5 true JPWO2023205184A5 (https=) | 2026-04-22 |
Family
ID=88420458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024561754A Pending JP2025515282A (ja) | 2022-04-19 | 2023-04-18 | モリブデン集積およびボイドフリー充填 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250259894A1 (https=) |
| EP (1) | EP4511875A1 (https=) |
| JP (1) | JP2025515282A (https=) |
| KR (1) | KR20250005319A (https=) |
| CN (1) | CN119404303A (https=) |
| TW (1) | TW202412178A (https=) |
| WO (1) | WO2023205184A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7686761B2 (ja) | 2021-02-23 | 2025-06-02 | ラム リサーチ コーポレーション | ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積 |
| WO2022221210A1 (en) | 2021-04-14 | 2022-10-20 | Lam Research Corporation | Deposition of molybdenum |
| CN115702474A (zh) | 2021-05-14 | 2023-02-14 | 朗姆研究公司 | 高选择性掺杂硬掩模膜 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101604054B1 (ko) * | 2009-09-03 | 2016-03-16 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
| US10170320B2 (en) * | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
| US20190067014A1 (en) * | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor device structures |
| WO2021076636A1 (en) * | 2019-10-15 | 2021-04-22 | Lam Research Corporation | Molybdenum fill |
| US11417568B2 (en) * | 2020-04-10 | 2022-08-16 | Applied Materials, Inc. | Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill |
-
2023
- 2023-04-18 JP JP2024561754A patent/JP2025515282A/ja active Pending
- 2023-04-18 EP EP23792451.9A patent/EP4511875A1/en active Pending
- 2023-04-18 TW TW112114336A patent/TW202412178A/zh unknown
- 2023-04-18 WO PCT/US2023/019000 patent/WO2023205184A1/en not_active Ceased
- 2023-04-18 CN CN202380048420.4A patent/CN119404303A/zh active Pending
- 2023-04-18 KR KR1020247038216A patent/KR20250005319A/ko active Pending
- 2023-04-18 US US18/857,125 patent/US20250259894A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11978666B2 (en) | Void free low stress fill | |
| US10546751B2 (en) | Forming low resistivity fluorine free tungsten film without nucleation | |
| US10573522B2 (en) | Method for preventing line bending during metal fill process | |
| KR20200140391A (ko) | 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법 | |
| CN115803473A (zh) | 钼的沉积 | |
| US20230122846A1 (en) | Feature fill with nucleation inhibition | |
| US20250183041A1 (en) | Low resistance molybdenum deposition for logic source/drain contacts | |
| US20250022751A1 (en) | Gradient liner in metal fill | |
| US20250259894A1 (en) | Molybdenum integration and void-free fill | |
| WO2021035254A1 (en) | Reducing line bending during metal fill process | |
| US20250038050A1 (en) | Feature fill with nucleation inhibition | |
| CN119096326A (zh) | 金属硅化物触点形成 | |
| KR20250164790A (ko) | 저 불소 핵생성 층 증착을 위한 펄스 ald 시퀀스 | |
| US20260026324A1 (en) | Tungsten wordline fill in high aspect ratio 3d nand architecture | |
| JPWO2023205184A5 (https=) | ||
| WO2025264711A1 (en) | Molybdenum deposition | |
| CN118786517A (zh) | 用于逻辑源极/漏极触点的低电阻钼沉积 | |
| KR20260046451A (ko) | 로직 및 메모리용 몰리브덴 금속화 및 충전 기술 | |
| WO2026090013A1 (en) | Etching of molybdenum | |
| KR20250121107A (ko) | 억제를 사용한 피처 충진 | |
| WO2026015631A1 (en) | Integrated metal and metal nitride deposition | |
| KR20250163928A (ko) | 텅스텐 나이트라이드 증착을 위한 시퀀스 | |
| WO2026024831A1 (en) | Microfabrication of low-resistance molybdenum interconnects |