Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
  • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/02—Pretreatment of the material to be coated
  • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/02—Pretreatment of the material to be coated
  • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
  • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
  • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
  • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
  • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
  • H10P70/20—Cleaning during device manufacture
  • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
  • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
  • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
  • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
  • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
  • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
  • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
  • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
  • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
  • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/01—Manufacture or treatment
  • H10W20/071—Manufacture or treatment of dielectric parts thereof
  • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
  • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
  • H10W20/42—Vias, e.g. via plugs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
  • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
  • H10W20/425—Barrier, adhesion or liner layers

Definitions

• features such as lines and vias may be filled with conductive materials such as tungsten (W), copper (Cu) and cobalt (Co).
• conductive materials such as tungsten (W), copper (Cu) and cobalt (Co).
• deposition processes including deposition of a thin, protective Mo layer using a molybdenum chloride (MoCl x ) precursor. This may be followed by Mo deposition to fill the feature using a molybdenum oxyhalide (MoO y X z ) precursor.
• Mo x x / MoO y X z molybdenum oxyhalide
• the protective Mo layer enables Mo fill using an MoO y X z precursor without oxidation of the underlying surfaces.
• in-situ clean processes in which a MoCl x precursor is used to remove oxidation from underlying surfaces prior to deposition. Subsequent deposition using the MoCl x precursor may deposit an initial layer and/or fill a feature.
• One aspect of the disclosure relates to a method including: providing a substrate including a feature having a feature bottom and feature sidewalls; depositing an initial molybdenum film in the feature using a molybdenum halide precursor and a reducing agent; and after depositing the initial molybdenum film, at least partially filling the feature with molybdenum using a molybdenum oxyhalide precursor.
• the feature bottom includes an oxidized metal silicide surface and the feature sidewalls includes oxidized metal surfaces
• the method further includes removing oxide from at least the oxidized metal silicide surface of the feature bottom to leave a metal silicide surface such that the initial molybdenum film is deposited directly on the metal silicide surface.
• the metal silicide surface is one of: titanium silicide (TiSi x ), nickel silicide (NiSi x ), molybdenum silicide (MoSi x ), cobalt silicide (CoSi x ), platinum silicide (PtSi x ), ruthenium silicide (RuSi x ), and nickel platinum silicide (NiPt y Si x ).
• removing oxide from the oxidized metal silicide surface of the feature bottom includes a clean with a Cl-based plasma, HF vapor clean, or an ammonium fluoride clean.
• the feature bottom includes an oxidized semiconductor surface.
• the semiconductor surface is silicon (Si).
• the semiconductor surface is silicon-germanium (SiGe).
• removing oxide from the oxidized semiconductor surface of the feature bottom includes a clean with a Cl-based plasma, HF vapor clean, or an ammonium fluoride clean.
• the initial molybdenum film is no more than five nanometers thick.
• the initial molybdenum film is no more than two nanometers thick.
• the molybdenum halide precursor is a molybdenum chloride precursor.
• the molybdenum halide precursor is molybdenum pentachloride (Mods).
• the molybdenum halide precursor is molybdenum hexachloride (MoCle).
• the initial molybdenum film is deposited at a substrate temperature that is at least 300°C and no more than 500°C.
• the initial molybdenum film is deposited at a substrate temperature that is at least 350°C and no more than 450°C.
• the initial molybdenum film is deposited in a chamber, the chamber having a pressure of at least 30 Torr.
• the molybdenum oxyhalide precursor is a molybdenum oxychloride (MoO x Cl y ).
• the molybdenum oxyhalide precursor is a molybdenum oxyfluoride (MoO x F y ).
• depositing the initial molybdenum film is performed in a first station of a multi-station chamber and depositing at least partially filling the feature is performed in at least a second station of the multi-station chamber.
• Another aspect of the disclosure relates to a method including: providing a substrate including a feature having a feature bottom and feature sidewalls, where the feature bottom includes an oxidized surface; soaking the feature in a molybdenum halide precursor to remove oxide from the oxidized surface to leave an unoxidized surface; and depositing molybdenum into the feature, including directly on the unoxidized surface, using the molybdenum halide precursor and a reducing agent.
• depositing molybdenum into the feature includes depositing a non-selective molybdenum layer in the feature.
• depositing molybdenum into the feature includes selectively depositing a molybdenum layer on the unoxidized surface relative to the feature sidewalls.
• the feature bottom includes a metal-containing surface
• the feature sidewalls include a dielectric surface
• depositing molybdenum further includes selectively depositing molybdenum on the metal-containing surface relative to the dielectric surface.
• depositing molybdenum into the feature includes depositing a bulk molybdenum layer in the feature using the molybdenum halide precursor.
• the oxidized surface is an oxidized titanium nitride surface.
• soaking the feature in the molybdenum halide precursor is performed in a first chamber and depositing molybdenum into the feature is performed in a second chamber, where the first chamber and the second chamber are different chambers.
• soaking the feature in the molybdenum halide precursor and depositing the molybdenum into the feature are performed in the same chamber.
• the chamber is a multi-station chamber, soaking of the feature in the molybdenum halide precursor is performed in a first station of the multi-station chamber and depositing molybdenum into the feature is performed in at least a second station of the multi-station chamber.
• soaking the feature in the molybdenum halide precursor lasts at least 10 seconds in duration.
• soaking the feature in the molybdenum halide precursor lasts at least 60 seconds in duration.
• the molybdenum layer is no more than five nanometers thick.
• the molybdenum layer is no more than two nanometers thick.
• the molybdenum halide precursor is a molybdenum chloride precursor.
• depositing molybdenum into the feature is deposited at a substrate temperature that is at least 300°C and no more than 500°C.
• depositing molybdenum into the feature is deposited at a substrate temperature that is at least 350°C and no more than 450°C.
• depositing molybdenum into the feature is deposited in a chamber, the chamber having a pressure of at least 10 Torr.
• depositing molybdenum into the feature is deposited in a chamber, the chamber having a pressure of at least 30 Torr.
• the method further includes, prior to soaking the feature, exposing the feature to an oxygen-containing chemistry to form the oxidized surface.
• the molybdenum chloride precursor is molybdenum pentachloride (M0CI5) or molybdenum hexachloride (MoCh,).
• the oxidized surface is oxidized silicon
• the molybdenum chloride precursor is molybdenum pentachloride
• soaking the feature in the molybdenum halide precursor removes oxide from the oxidized silicon, leaving silicon.
• the oxidized surface is oxidized silicon germanium
• the molybdenum chloride precursor is molybdenum pentachloride
• soaking the feature in a molybdenum halide precursor removes oxide from the silicon germanium, leaving silicon germanium.
• the feature has a titanium nitride layer
• the molybdenum chloride precursor is molybdenum pentachloride
• soaking the feature in a molybdenum halide precursor etches the titanium nitride layer.
• the etch of the titanium nitride layer can be controlled to leave the titanium nitride layer at a desired thickness.
• the titanium nitride layer is completely removed.
• soaking of the feature in the molybdenum halide precursor and depositing the molybdenum into the feature is performed in a first station of a multi-station chamber and further including depositing a bulk molybdenum layer into the feature, where the depositing the bulk molybdenum layer is performed in at least a second station of the multi-station chamber.
• soaking the feature includes continuously exposing the feature to the molybdenum halide precursor.
• soaking the feature includes exposing the feature alternating doses of the molybdenum halide precursor and an inert gas.
• Another aspect of the disclosure relates to a method including: providing a substrate with a feature having a feature bottom and feature sidewalls; wherein the feature bottom has a metal nitride surface; depositing an initial molybdenum film on the feature sidewalls and the metal nitride surface of the feature bottom using a molybdenum halide precursor and a reducing agent; removing molybdenum film from the feature sidewalls, leaving a molybdenum film on the metal nitride surface feature bottom; and at least partially filling the feature with molybdenum.
• the metal nitride is titanium nitride (TiN).
• the metal nitride is a titanium silicide nitride (TiSiN).
• the metal nitride of the feature bottom overlies a stack having a semiconductor surface and a titanium silicide (TiSi) layer.
• the semiconductor surface is silicon (Si).
• the semiconductor surface is silicon-germanium (SiGe).
• the method further includes removing at least some metal nitride from the feature sidewalls before depositing an initial molybdenum film on the sidewalls and the metal nitride surface of the feature bottom.
• Figures 1 and 2 are flow diagrams showing certain operations in methods according to various embodiments.
• Figures 3A-5D are schematic diagrams showing cross-sectional depictions of features during fill processes according to various embodiments.
• Figure 6 is a flow diagram showing a method to fill a feature having a protective nitride layer.
• Figure 7A-7E are schematic diagrams showing cross-sectional depictures of a feature with a protective nitride layer during a fill.
• Figures 8 and 9 show examples of apparatus that may be used to perform the methods described herein.
• Mo films may be deposited in semiconductor substrate features such as vias and trenches as liner layers and feature fill.
• Applications include sub-10 nm node middle of line (MOL) and back end of line (BEOL) logic interconnects.
• the methods may be used for source/drain contact fill.
• Mo offers several benefits over other metals such as cobalt (Co), ruthenium (Ru), and tungsten (W): (i) barrier-less and liner-less Mo film deposition is more feasible on oxide and nitride as compared to Co, Ru, and W, (ii) Mo resistivity scaling is better than W, (iii) Mo intermixing with underlying Co is not expected compared to Ru intermixing with Co at less than 450°C, and (iv) there is relatively easy Mo integration into current W schemes compared to Co and Ru.
• Co cobalt
• Ru ruthenium
• W tungsten
• the processes include deposition of a thin, protective Mo layer using a molybdenum chloride (MoCl x ) precursor. This may be followed by Mo deposition to fill the feature using a molybdenum oxyhalide (MoO y X z ) precursor.
• MoCl x molybdenum chloride
• MoO y X z molybdenum oxyhalide
• the protective Mo layer enables Mo fill using an MoO y X z precursor without oxidation of an underlying surface. This can be useful for oxygen-sensitive surfaces such as silicon (Si), silicon germanium (SiGe), titanium (Ti), titanium nitride (TiN) and titanium silicide (TiSh).
• a MoCl x precursor is used to remove oxide(s) from underlying surfaces prior to deposition.
• Subsequent deposition using the MoCl x precursor may yield a liner layer and/or fill a feature.
• the protective Mo layer protects the bottom surface of the feature. In some embodiments, it is deposited selectively on the bottom surface with little or no deposition on the feature sidewalls. In some embodiments, it is deposited non-selectively on the bottom and sidewall surfaces.
• Molybdenum chloride precursors are given by the formula MoCl x , where x is 2, 3, 4, 5, or 6, and include molybdenum di chloride (MoCh), molybdenum trichloride (MoCh), molybdenum tetrachloride (MoCh), molybdenum pentachloride (MoCh), and molybdenum hexachloride (MoCh,).
• MoCh molybdenum di chloride
• MoCh molybdenum trichloride
• MoCh molybdenum tetrachloride
• MoCh molybdenum pentachloride
• MoCh molybdenum hexachloride
• M0CI5 or MoCh are used. While the description chiefly refers to MoCl x precursors, in other embodiments, other molybdenum halide precursors may be used.
• Molybdenum halide precursors are given by the formula MoX z , where X is a halogen (fluorine (F), chlorine (Cl), bromine (Br), or iodine (I)) and z is 2, 3, 4, 5, or 6.
• MoX z precursors include molybdenum fluoride (MoFr,).
• a non-fluorine- containing MoX z precursor is used to prevent fluorine etch or incorporation.
• a non-bromine-containing and/or a non-iodine-containing MoX z precursor is used to prevent etch or bromine or iodine incorporation.
• Molybdenum oxyhalide precursors are given by the formula MoO y X z , where X is a halogen (fluorine (F), chlorine (Cl), bromine (Br), or iodine (I)) and y and z are numbers greater than 0 such that MoO y X z forms a stable compound.
• X is a halogen (fluorine (F), chlorine (Cl), bromine (Br), or iodine (I)) and y and z are numbers greater than 0 such that MoO y X z forms a stable compound.
• molybdenum oxyhalides examples include molybdenum dichloride dioxide (M0O 2 CI 2 ), molybdenum tetrachloride oxide (MoOCh), molybdenum tetrafluoride oxide (M0OF 4 ), molybdenum dibromide dioxide (MoC B ⁇ ), and the molybdenum iodides M0O 2 I, and M0 4 O 11 I.
• a single module may be used for both clean of a feature and subsequent deposition in the feature, eliminating a need for a separate clean module.
• Mo is deposited without an oxide layer or an oxidized surface at the interface of Mo and an underlying layer. This reduces contact resistance.
• a liner layer such as a titanium nitride (TiN) barrier layer, is etched to reduce its thickness in a well-controlled process. According to various embodiments, the liner layer may be partially or completely removed. This thinning of the liner layer may reduce line and via resistance in the fabricated semiconductor circuit.
• Figure 1 is a process flow diagram illustrating a method to fill a feature with a molybdenum (Mo) film.
• Mo molybdenum
• Examples of applications include middle-of-line (MOL) or back end of line (BEOL) interconnects.
• the methods may be used for source/drain contact fill.
• Method 100 begins with providing a substrate including a feature in which Mo is to be deposited in an operation 101 The substrate may be provided to a semiconductor processing tool.
• the feature may be a trench or via that is formed in a dielectric layer.
• dielectric materials include oxides, such as silicon oxide (S1O2) and aluminum oxide (AI2O3); nitrides, such as silicon nitride (SiN); carbides, such as nitrogen-doped silicon carbide (NDC) and oxygen-doped silicon carbide (ODC); and low k dielectrics, such as carbon-doped S1O2.
• Mo may be deposited in the feature to make electrical contact to an underlying layer.
• underlying layers include metals, metal silicides, and semiconductors.
• metals include Co, Ru, copper (Cu), W, Mo, nickel (Ni), iridium (Ir), rhodium (Rh), tantalum (Ta), and Ti.
• metal silicides include TiSi x , nickel silicide (NiSi x ), molybdenum silicide (MoSi x ), cobalt silicide (CoSi x ), platinum silicide (PtSi x ), ruthenium silicide (RuSi x ), and nickel platinum silicide (NiPt y Si x ).
• Examples of semiconductors include silicon (Si), silicon germanium (SiGe), and gallium arsenide (GaAs) with or without semiconductor dopants such as carbon (C), arsenic (As), boron (B), phosphorus (P), tin (Sn), and antimony (Sb).
• semiconductor dopants such as carbon (C), arsenic (As), boron (B), phosphorus (P), tin (Sn), and antimony (Sb).
• the feature generally has sidewalls with sidewall surfaces and a bottom with a bottom surface.
• the sidewalls may be made of one or more layers.
• the sidewall extends from the field to the bottom.
• the feature bottom may extend from a first sidewall in the feature to a second sidewall in the feature and may be made of one or more layers.
• the sidewall surface is the exposed area on the sidewall and may change during wafer processing, e.g., the sidewall surface may change from a first material to a second material after the second material is deposited onto the sidewall.
• the bottom surface is the exposed area on the bottom and may change during wafer processing.
• the sidewall surfaces may be the same material as the bottom surface.
• the sidewall surfaces and the bottom surface are TiN.
• the sidewall surfaces may be a different material than the material of the bottom surface.
• the bottom surface may be a metal silicide and the sidewall surface may be a silicon oxide, such as S1O2.
• a liner layer may line the unfilled feature and form the sidewall surfaces and/or bottom surface.
• a liner layer lines the whole feature and forms the sidewall surfaces and bottom surface.
• the liner layer lines only a portion of the feature.
• a TiN layer may line the sidewalls with the bottom surface unlined.
• materials for liner layers include metal nitrides (e.g., a TiN or tantalum nitride (TaN) barrier layer) and metals (e.g., a Ti adhesion layer).
• the bottom and sidewall surfaces are oxidized. Oxidation may be caused by exposing a feature’s surfaces to air or other oxidizing conditions.
• a metal silicide (MSi x where M is a metal) surface may be oxidized to oxidized metal silicide (MSi x O y ) on exposure to air.
• Other examples of oxidized surfaces include oxidized metal nitrides (MN x O y ), oxidized silicon (SiO x ), and oxidized silicon-germanium (SiGeO x ). (In the description herein, the subscripts x and y are used in formulas to denote non-zero numbers.)
• oxidizing conditions occur in the course of substrate processing or transfer operations. In some embodiments, an intentional oxidation is performed as described further below with reference to Figure 2.
• an optional clean, operation 102 may be performed.
• the optional clean may be used to remove oxide on the feature’s surfaces.
• a hydrogen plasma treatment, a thermal hydrogen treatment or a reducing treatment is used to reduce oxidized metal on a metal substrate at the feature bottom.
• an atomic layer clean with a Cl-based plasma, a hydrogen fluoride (HF) vapor clean, an ammonium fluoride (NFLF) clean, or a treatment using other reducing agents may be used to reduce oxide of Si or SiGe on a substrate at the feature bottom.
• an in-situ clean using a molybdenum halide, such as molybdenum chloride (MoCl x ) compound may be used. In-situ clean processes are described further below with respect to Figure 2.
• an initial Mo layer is deposited in the feature in an operation 103.
• the initial Mo layer may be deposited by an atomic layer deposition (ALD) method.
• ALD is a surface-mediated deposition technique in which doses of a precursor and a reactant are sequentially introduced into a deposition chamber.
• the initial Mo layer is deposited by sequentially introducing a Mo precursor and a reducing agent into the deposition chamber.
• One or more cycles of sequential doses of the Mo precursor and reducing agent may be used to deposit the initial Mo layer.
• the initial Mo layer may be deposited conformally to the feature.
• a conformal Mo layer may be between 1 and 5 nm in some embodiments. In some embodiments, it is no more than 2 nm thick.
• Mo may be deposited non- conformally such that it is selectively deposited on the bottom of the feature relative to the sidewalls.
• the Mo precursor is a MoCl x precursor.
• other MoX z precursors may be used in other embodiments.
• reducing agents include hydrogen (FL), silane (SiFL), diborane (B2H6), germane (GeFL), NFL, and hydrazine (N 2 H 4 ).
• Using a non-oxygen-containing Mo precursor to deposit the initial Mo layer prevents oxidation of the feature’s surfaces. It also prevents oxygen from being incorporated into the initial Mo layer. Oxidation increases contact resistance. The lack of oxidation and oxygen incorporation ensures the contact resistance remains low.
• the temperature of the substrate and the pressure of a chamber may be controlled.
• the substrate may be heated between 300°C and 500°C, e.g., between 350°C and 450°C.
• the chamber may be pressurized to at least 10 Torr, e.g., to at least 30 Torr, or to at least 50 Torr.
• process parameters such as temperature, may be used to control selectivity.
• Mo may be deposited selectively on a metal silicide surface or metal nitride surface with respect to a silicon oxide sidewall surface by using a lower temperature than for conformal deposition.
• a temperature lower than 400°C is used.
• the feature is filled with Mo using a molybdenum oxyhalide (MoO y X z ) precursor in operation 105.
• MoO y X z precursors include M0O2CI2, MoOCU, M0OF4, Mo02Br2, M0O2I, and M04O11I.
• the feature may be filled using ALD, plasma enhanced ALD, chemical vapor deposition (CVD), or plasma enhanced CVD.
• the MoO y X z precursor and a reducing agent are in vapor phase together in the deposition chamber.
• EL may be the reducing agent.
• Mo deposits more quickly using a molybdenum oxyhalide precursor than the MoCl x precursor used to form the initial Mo layer.
• a MoO y X z precursor may deposit Mo at a deposition rate at least twice as fast as a MoCl x precursor for a non-plasma process.
• Plasma enhanced processes may be used to fill features at lower temperatures and/or increase deposition rates.
• Figure 2 is a process flow diagram illustrating an in-situ clean method to clean an oxidized feature.
• Method 200 begins with providing a substrate including a feature having one or more oxidized surfaces in an operation 201.
• the substrate may be provided to a semiconductor processing tool.
• the feature Like the feature referenced in operation 101 of Figure 1, the feature generally has a bottom surface and sidewall surfaces. It may be formed in a dielectric layer as a trench or via to connect to an underlying layer. Examples of materials that form the bottom surface and sidewall surfaces, including liner layers, are given above with reference to operation 101 of Figure 1.
• the feature has at least one oxidized surface.
• both the bottom surface and the sidewall surfaces are oxidized.
• only some surfaces e.g., only the bottom surface
• the oxidized surface may be caused by exposing the surface to oxidizing conditions. Examples of oxidizing conditions include exposing the surface to air and treating the surface with an oxygen- based thermal or plasma treatment. In some embodiments, oxidizing conditions occur in the course of substrate processing or transfer operations. In some embodiments, an intentional oxidation is performed as described further below. Examples of oxidized surfaces are given above with reference to Figure 1.
• an optional intentional oxidization of the surface may be performed. Intentional oxidation may occur through exposing the surface to air, treating the surface with an oxygen-based thermal treatment or an oxygen-plasma treatment.
• the intentional oxidation of the surface may be used to increase oxidization of a liner layer, e.g. a TiN barrier layer. This increases the amount of liner layer that is removed during the in-situ clean. Thinning the liner layer in this manner lowers resistance in the feature.
• an optional clean, operation 202 may be performed.
• the optional clean may be used to remove oxide on the feature’s surfaces.
• a hydrogen plasma treatment, a thermal hydrogen treatment or a reducing treatment is used to reduce oxidized metal on a metal substrate at the feature bottom.
• an atomic layer clean with a Cl-based plasma, a hydrogen fluoride (HF) vapor clean, an ammonium fluoride (NFUP) clean, or a treatment using other reducing agents may be used to reduce oxide of Si or SiGe on a substrate at the feature bottom.
• the feature undergoes a soak in an operation 203.
• the feature is soaked in a molybdenum chloride (MoCl x ) precursor to remove oxidation from the feature’s surfaces.
• the soak may be done continuously.
• the soak may be pulsed, cycling MoCl x and a purge gas, such as argon (Ar).
• the precursor is a non-oxygen Cl-containing Mo compound able to remove oxidation from the feature’s surfaces. Examples of MoCl x compounds are given above.
• a Cl-containing precursor may be used where traditional cleaning with thermal or plasma Eh does not work, such as where the oxidized surface is stable on the surface material.
• a Cl-containing precursor is less likely to over-etch a feature’s liner layer or attack a feature’s surfaces than a F-containing compound.
• a feature may have a TiN barrier layer as its liner layer.
• the liner layer may be oxidized to form a TiN x O y surface layer. Because TiN x O y is stable, FE processes may not efficiently remove TiN x O y from the TiN layer. Soaking the feature in a MoCl x precursor, such as M0CI5, effectively removes the oxide from the TiN liner layer.
• a F-based precursor such as tungsten fluoride (WFe) may cause over-etching of the liner. The F- based precursor may attack the underlying surfaces, such as the feature’s bottom surface.
• the in- situ clean process of Figure 2 prevents over-etching of the TiN liner and attack on the underlying surfaces.
• the F-based precursor may attack it and/or any underlying metal silicide.
• the temperature of the substrate, the pressure of a chamber in the semiconductor processing tool, and the precursor exposure time to the feature may be controlled.
• the substrate may be heated between 300°C and 500°C, e.g., between 350°C and 450°C.
• the chamber may be pressurized to at least 10 Torr, e.g., at least 30 Torr, or at least 50 Torr.
• the total precursor exposure time to the feature may be at least 10 seconds, e.g., at least 60 seconds.
• the soak may be continuous or pulsed.
• the feature may be filled with Mo in an operation 205.
• Operation 205 may involve deposition of an initial Mo layer and/or fill using MoCl x , the same precursor used to soak the feature in operation 203.
• the feature may be filled using a molybdenum oxyhalide precursor MoCl y X z . Examples of Mo oxyhalide precursors are given above.
• the feature may be filled using ALD or CVD, including thermal and plasma-enhanced ALD and CVD processes.
• Feature fill may be non-selective or selective according to various embodiments.
• feature fill may be selective to partially fill the feature, followed by a more conformal fill to complete feature fill.
• a non-selective deposition may be described herein as a conformal deposition in that the deposited layer conforms to the contour of the underlying feature. Such a deposited layer may have some thickness non-uniformity.
• the feature may be filled by ALD, first using the MoCl x precursor to deposit an initial Mo layer on the feature’s surfaces. After the initial Mo layer is deposited, the fill may continue with ALD using a Mo oxyhalide precursor for Mo bulk fill. In some embodiments, the feature may be filled using the MoCl x precursor in a single fill operation. In other embodiments, operations 103 and 105 as described in Figure 1 may be performed.
• the temperature of the substrate, the pressure of the chamber may be controlled, and the reactant exposure time may be controlled.
• the substrate may be heated between 300°C and 500°C, e.g., between 350°C and 450°C.
• the chamber may be pressurized to at least 10 Torr, e.g., at least 30 Torr, or at least 50 Torr.
• the reactant exposure time may be at least 5 seconds, e.g., at least 15 seconds.
• process parameters such as temperature, may be used to control selectivity.
• Mo may be deposited selectively on a metal silicide surface or metal nitride surface with respect to a silicon oxide sidewall surface by using a lower temperature than for conformal deposition.
• Figures 3A-5D show schematic examples of the processes of Figure 1 and/or Figure 2.
• a feature 301 having a TiN liner layer 315 is shown.
• the feature 301 is formed in a dielectric material 313 to connect to an underlying metal silicide (MSi x ) 307.
• the underlying MSi x is connected to a semiconductor layer 306, e.g., silicon (Si) or silicon-germanium (SiGe).
• This stack may be used in a transistor junction structure.
• the dielectric material 313 is mostly oxide and includes a nitride layer 314.
• a MSi x layer is titanium silicide (TiSi x ).
• the TiN liner layer 315 lines the feature 301.
• the TiN liner layer 315 is a barrier layer used on top of a metal silicide such as TiSi x in trench contacts for source/drain applications.
• a metal silicide such as TiSi x in trench contacts for source/drain applications.
• One purpose of the TiN layer is to prevent the MSi x from any potential reaction with the overlying metal.
• Another purpose is to protect the MSi x or a Mo diffusion barrier from a fluorine attack.
• Yet another purpose is to prevent the MSix from being oxidized in air or during subsequent processing.
• TiN surface oxide i.e., TiN x O y
• TiN x O y is not easy to reduce by a thermal or plasma 3 ⁇ 4 preclean process.
• the TiN surface is susceptible to re-oxidation in subsequent Mo deposition. Re-oxidation increases contact resistance.
• the methods described herein allow Mo deposition without this increase in contact resistance. Further, the methods described herein allow thinning of the TiN thickness, further reducing resistance.
• At least the top surface of the TiN liner layer 315 is oxidized.
• the oxidized TiN is TiN x O y 317 and forms bottom surface 305 and sidewall surfaces 311.
• Figure 3B depicts the feature 301 undergoing an in-situ clean, as described above in Figure 2.
• Shown is a MoCl x precursor 319 soaking the feature.
• the soak is continuous.
• the soak may be multiple cycles of alternating doses of the MoCl x precursor and a purge gas.
• the MoCl x precursor soak effectively removes the oxide from the surface.
• the TiN x O y 317 layer is etched, and the TiN remains.
• the unoxidized TiN liner layer 315 forms the bottom surface 305 and sidewall surfaces 311 of the feature 301.
• the unoxidized TiN liner layer 315 may be about 1-10 Angstroms thick in some embodiments.
• Figure 3C shows the feature 301 after an initial Mo layer 321 is deposited.
• the initial Mo layer 321 is deposited using an ALD process.
• the ALD process uses the MoCl x precursor, the same precursor used in the in-situ clean shown in Figure 3B.
• the result is a thin initial Mo layer 321 non- selectively deposited on the TiN liner layer 315.
• the initial Mo layer 321 may be less than 5 nm thick or less than 2 nm thick in some embodiments.
• the precursor is non-oxygen containing molybdenum precursor.
• the initial Mo layer 321 oxidized is not re-oxidation of the feature 301.
• the feature is left with an unoxidized TiN liner layer 315 covered by an unoxidized initial Mo layer 321.
• feature 301 after Mo gap fill is shown.
• the feature is filled with Mo 323.
• the feature may be filled using the ALD or a CVD process.
• the Mo gap fill is deposited on the initial Mo layer 321 to the top of the feature.
• the gap fill uses a Mo oxyhalide precursor. While the Mo oxyhalide precursor contains oxygen, the initial Mo layer 321 prevents oxidation of the TiN liner layer 315. In the case that the TiN layer 315 is completely removed, the initial Mo layer 321 prevents oxidation of the MSix layer.
• the gap fill may continue to use the MoCl x precursor.
• deposition of Mo in the feature may be selective to the bottom surface when the TiN layer 315 is completely removed, thus exposing the sidewall SiCte 313 and the MSix layer 307. This results in bottom-up rather than conformal fill and can be useful to prevent seam and void formation.
• An example of selective deposition is described below with respect to Figures 3E-3H.
• Figure 3E shows a feature 301 having a TiN liner layer 315.
• the feature 301 is formed in a dielectric material 313 to connect to an underlying MSi x 307.
• the underlying MSi x is connected to a semiconductor layer 306, e.g., Si or SiGe.
• the dielectric material 313 is mostly oxide and includes a nitride layer 314.
• the TiN liner layer 315 covers the feature. At least the top layer of the TiN liner layer is oxidized and forms a TiN x O y 317 layer.
• the TiN x O y layer forms bottom surface 305 and sidewall surfaces 311.
• Figure 3F depicts the feature 301 undergoing an in-situ clean. Shown is a MoCl x precursor 319 soaking the feature. The MoCl x precursor soak effectively removes the oxide and the TiN liner layer 317 from both the bottom surface 305 and sidewall surfaces 311. Both the TiN x O y 317 layer and the TiN liner layer 315 are etched away. The in-situ clean exposes the dielectric material 313 as the sidewall surfaces 311 and the underlying MSi x 307 as the bottom surface 305.
• FIG. 3G depicts the feature 301 after Mo 323 is selectively deposited.
• the Mo 323 may be deposited using an ALD process or a CVD process.
• the ALD process uses the MoCl x precursor, the same precursor used in the in-situ clean shown in Figure 3F.
• the result is Mo 323 selectively deposited on the underlying MSi x 307.
• Selective deposition refers to depositing more Mo 323 on the metal -containing surfaces, MSi x , relative to the dielectric material 313 surfaces. In some embodiments, no Mo or only a discontinuous film of Mo is deposited on the dielectric material surfaces.
• the precursor is a non-oxygen containing Mo precursor, thus there is no re-oxidation of the feature 301, nor is the Mo 323 oxidized.
• the feature is left with Mo deposited on the bottom surface 305.
• Figure 3H shows the feature 323 after the Mo gap filled.
• the feature is filled with Mo 323 from the initial Mo deposition to the top of the feature.
• the feature may be filled using the ALD or the CVD process.
• the fill may be performed in a single stage deposition, where the fill is continued using the same parameters, such as temperature and pressure, as the initial fill in Figure 3F.
• the fill may be performed in multi-stage Mo deposition.
• the deposition may change parameters during the deposition. For example, the selective deposition occurring in a first stage may have a first temperature. After the selective deposition in the first stage, the deposition may continue in a second stage and may have a second temperature higher than the first temperature. The increase in temperature may be used to increase the rate of Mo bulk fill, decreasing processing time. Selective Mo deposition can also be achieved by varying other process parameters in a multi-stage configuration. For example, in some embodiments, the Mo precursor and reactant concentrations are varied at different stages. In some embodiments, operating in a starved Mo precursor regime may result in higher selectivity in certain embodiments. In some embodiments, deposition at a particular condition may initially be selective and transition to a non-selective deposition as the exposure time increases and a nucleation delay is overcome. Thus, a selective deposition may involve limiting exposure time.
• a feature 401 is shown.
• the feature 401 is formed in a dielectric material 413 to connect to an underlying titanium silicide (TiSi x ) 407.
• the underlying TiSi x is connected to a semiconductor layer 406, e.g., silicon (Si) or silicon-germanium (SiGe).
• This stack may be used in a transistor junction structure.
• the dielectric material 413 is mostly oxide, includes a nitride layer 414, and forms the sidewall surfaces 411.
• the sidewall surfaces 411 may be coated with a Ti liner layer (not shown).
• At least the top surface of the underlying TiSi x 407 is oxidized.
• the oxidized TiSi x is titanium silicide oxide TiSi x O y 408 and forms a bottom surface 405.
• Figure 4B depicts the feature 401 undergoing a preclean process.
• the preclean process may be an atomic layer clean with a Cl-based plasma, a hydrogen fluoride (HF) vapor clean, an ammonium fluoride (NFLF) clean, or a treatment using other reducing agents.
• the preclean is an integrated process (no vacuum break) which removes the oxide from the surface.
• the TiSi x O y 408 layer is removed, exposing the underlying TiSi x 407 as the bottom surface 405.
• Figure 4C shows the feature 401 after the initial Mo layer 421 is deposited.
• the initial Mo layer 421 is deposited using an ALD process using a MoCl x precursor.
• the result is an initial Mo layer 421 non-selectively deposited, including directly on the dielectric material 413 and on the underlying TiSi x 407.
• the initial Mo layer 421 may be less than 5 nm thick layer.
• the precursor is non-oxygen containing.
• the initial Mo layer 421 oxidized.
• the feature is left with an unoxidized underlying TiSix.
• the initial Mo layer 421 conformally covers the dielectric material 413 on the feature sidewalls and the TiSi x 407 on the feature bottom.
• Figure 4D depicts feature 401 after Mo gap fill.
• the feature is filled with Mo 423.
• the feature may be filled using ALD, plasma enhanced ALD, CVD or plasma enhanced CVD.
• the Mo gap fill is deposited on the initial Mo layer 421 to the top of the feature.
• the gap fill uses a Mo oxyhalide precursor. While the Mo oxyhalide precursor contains oxygen, the initial Mo 421 prevents oxidation of the Ti liner layer and the underlying TiSi x . While the example in Figure 4C shows the initial Mo layer 421 as a conformal layer, in other embodiments, it may be deposited selectively as in Figure 3G. In such cases, the Mo gap fill is bottom up fill as in Figure 3H.
• Figure 5 A shows a feature 501 without a liner layer.
• the feature is formed in a dielectric material 513 to connect to an underlying semiconductor 507, such as Si or SiGe. At least the top surface of the semiconductor surface is oxidized to form a bottom surface 505.
• the semiconductor surface Si is oxidized to form silicon oxide (SiO x ) 508.
• the dielectric material 513 forms sidewall surfaces 511. It is mostly oxide and includes a nitride layer 514.
• Figure 5B depicts the feature 501 undergoing a preclean process.
• the preclean process may be an atomic layer clean with a Cl -based plasma, HF vapor clean, an ammonium fluoride clean, or a treatment using other reducing agents.
• the preclean process removes the oxide from the semiconductor surface and the semiconductor surface forms the bottom surface 505.
• the SiO x 508 layer is converted to Si, which forms the bottom surface 505.
• the preclean process can be a MoCL soak process.
• Figure 5B can also depict a MoCl x precursor soaking the feature.
• the soak is continuous.
• the soak may be multiple cycles of alternating doses of the MoCl x precursor and a purge gas.
• the MoCl x precursor soak effectively removes the oxide 508 from the Si (and SiGe) surface 508.
• Figure 5C shows the feature 501 after an initial Mo layer 521 is deposited. The initial
• Mo layer 521 is deposited using an ALD process.
• the ALD process uses a MoCl x precursor.
• the result is a thin initial Mo layer 521 conformally deposited on the feature 501, including directly on the dielectric material 513 and on the underlying semiconductor
• the initial Mo layer may be less than 5 nm thick.
• the precursor is non-oxygen containing molybdenum precursor. Thus, as shown in Figure 5C, there is no re-oxidation of the feature 501.
• Figure 5D depicts feature 501 after Mo gap fill.
• the feature is filled with Mo 523.
• the feature may be filled using ALD, plasma enhanced ALD, CVD or plasma enhanced CVD.
• the Mo gap fill is deposited on the initial Mo layer 521 to the top of the feature.
• the gap fill uses a Mo oxyhalide precursor. While the Mo oxyhalide precursor contains oxygen, the initial Mo layer 521 prevents oxidation of the dielectric material and the underlying semiconductor surface.
• a bottom surface may be an oxidized metal surface such as a Mo, W, Co, Cu, or Ti surface that is oxidized.
• An in-situ clean may be performed to remove the oxidation, leaving a unoxidized metal surface.
• Figure 6 is a process flow diagram illustrating a method to fill a feature having a protective nitride layer with a molybdenum (Mo) film.
• the protective nitride layer may be used to protect a feature bottom and the underlying materials below a bottom surface of the feature.
• Method 600 begins with providing a substrate with a metal nitride layer in operation 601. The substrate may be provided to a semiconductor processing tool.
• the feature Similar to the feature referenced in operation 101 of Figure 1, the feature generally has a bottom with a bottom surface and sides with sidewall surfaces. It may be formed in a dielectric layer as a trench or via and connects to an underlying layer. Examples of materials that form the bottom and sidewall are given above with reference to operation 101 in Figure 1.
• the bottom surface is a metal nitride layer.
• a metal nitride are TiN and TiSiN.
• the metal nitride layer may conformally line the feature, such that the sidewall surfaces and bottom surface is the metal nitride layer.
• the sidewall surfaces may be a different material than the material of the bottom surface.
• the bottom surface may be a metal nitride layer and the sidewall surface may be a dielectric material.
• the bottom surface and sidewall surfaces are oxidized. Oxidation may be caused by exposing a feature’s surfaces to air or other oxidizing conditions. In some embodiments, oxidizing conditions occur in the course of substrate processing or transfer operations. In some embodiments, an intentional oxidation is performed as described above with reference to Figure 2.
• an optional clean and/or optional etch may be performed in operation 602.
• the clean may be used to remove oxide from the field, sidewall surfaces, and bottom surfaces of the feature while the optional etch may be used to remove part of the metal nitride layer on the sidewall or the field of the substrate. Examples of cleaning treatments are given above in operation 202 of Figure 2.
• operation 602 may involve soaking the feature in a Mo precursor to remove oxidation and/or remove or reduce the metal nitride layer from the feature.
• the soak may be done continuously.
• pulsed soak may be used, cycling the precursor gas while flowing a purge gas.
• the precursor gas may be cycled alternatively with a purge gas.
• the precursor gas is MoCl x , e.g., precursor gas is M0CI5. Examples of other MoCl x precursors are given above.
• the temperature of the substrate, the pressure of a chamber in the semiconductor processing tool, and the precursor exposure time to the feature may be controlled.
• the substrate may be heated between 300°C and 500°C, e.g., between 350°C and 450°C.
• the chamber may be pressurized to at least 10 Torr, e.g., at least 30 Torr, or at least 50 Torr.
• the total precursor exposure time to the feature may be at least 10 seconds, e.g., at least 60 seconds.
• the soak may be continuous or pulsed.
• an initial Mo layer is deposited into the feature.
• the initial Mo layer may be deposited by ALD.
• the initial Mo layer is formed by depositing one or more sequential doses of the Mo precursor and a reducing agent into the deposition chamber.
• the Mo precursor may be a non-oxygen containing Mo precursor.
• the non-oxygen containing precursor prevents oxidation of the surfaces of the feature and helps ensure the contact resistance remains low.
• An example of a non-oxygen containing precursor is a MoCl x precursor, which are described above. Examples of reducing agents are given above in operation 103 of Figure 1.
• the initial Mo layer may be deposited selectively into the feature on the metal nitride layer.
• the Mo is deposited so that the Mo layer becomes the bottom surface of the feature.
• the conformal Mo layer may be between 1 and 5 nm in some embodiments. In some embodiments, it is no more than 2 nm thick
• the temperature of the substrate and the pressure of a chamber may be controlled.
• the substrate may be heated between 300°C and 500°C, e.g., between 350°C and 450°C.
• the chamber may be pressurized to at least 10 Torr, e.g., to at least 30 Torr, or to at least 50 Torr.
• Operation 605 may involve performing an etch operation similar to that described above with respect to operation 602.
• the etch is performed such that the metal nitride layer and the Mo layer on the bottom surface remain in the feature.
• the metal nitride layer and the Mo layer on the feature bottom surface may be used to protect an active junction on the feature bottom.
• the etch may use the same precursors and the same methods described in the etch operation above described in operation 602.
• the etch in operation 605 may be “more aggressive” than the clean and/or etch performed in operation 602. A more aggressive etch in operation 605 may be performed at a higher temperature, higher pressure, longer exposure time of the precursor, or a combination thereof than that in operation 602.
• the feature is filled with Mo in operation 607 after the metal nitride layer and Mo layer are removed from the sidewalls of the feature in operation 605.
• the feature may be filled by using ALD or CVD, including thermal and plasma-enhanced ALD and CVD processes.
• a Mo halide or Mo oxyhalide may be used as a precursor for the fill operation.
• multiple precursors may be used to fill the feature.
• a Mo halide precursor may be used to deposit Mo into the feature followed by a Mo oxyhalide precursor for a bulk Mo fill.
• the feature may be initially filled using M0CI5 as a precursor followed by a fill using M0O2CI2.
• the feature fill may be non-selective or selective according to various embodiments. In some embodiments, feature fill may be selective to partially fill the feature, followed by a more conformal fill to complete feature fill.
• the fill process may use the same parameters discussed above in Figure 2. Similar to the operation in 203, the substrate may be heated between 300°C and 500°C, e.g., between 350°C and 450°C.
• the chamber may be pressurized to at least 10 Torr, e.g., at least 30 Torr, or at least 50 Torr.
• the reactant exposure time may be at least 5 seconds, e.g., at least 15 seconds.
• process parameters such as temperature, may be used to control selectivity.
• Figures 7A-7F show schematic examples of the process of Figure 6.
• a feature 701 having a TiN liner layer 715 is shown.
• the feature 701 has a bottom surface 705 and sidewall surfaces 711.
• the TiN liner is the bottom surface 705 and the sidewall surfaces 711.
• the liner layer may be a titanium silicon nitride (TiSi x N) liner layer.
• the TiN layer 715 may be oxidized on a top surface of the layer.
• the feature 701 is formed in a dielectric material 713.
• An underlying stack 710 is below the feature bottom surface 705.
• the underlying stack 710 has a metal silicide nitride (MSi x N y ) layer 708 and a metal silicide layer (MSi x ) 707 connected to a semiconductor layer 706, e.g., silicon (Si) or silicon-germanium (SiGe).
• This stack 710 may be used in a transistor junction structure.
• MSi x layer is titanium silicide (TiSi x ) and a metal silicide nitride (MSi x N y ) is a titanium silicide nitride (TiSi x N y ).
• the TiN liner layer 715 on the bottom surface 705 is used to protect the underlying stack 710 below the feature bottom surface. As discussed above with respect to Figure 3A, the TiN liner layer may act as a diffusion barrier, prevent etching of the underlying material, and prevent the underlying material from oxidizing.
• FIG. 7B depicts the feature 701 undergoing a clean and etch process, as described above in operation in 602 of Figure 6. Shown is a MoCl x precursor 719 soaking the feature.
• the MoCl x precursor 719 soak effectively removes any oxide on the surface.
• TiN x O y may be cleaned and may leave a TiN layer 715.
• the etch removes any TiN layer on the field and may remove part or all of the TiN layer on the substrate sidewall.
• part of the TiN layer 715 remains on the sidewalls such that the TiN layer is thicker at the bottom portion of the sidewall relative to the upper portion.
• the TiN layer remains as the bottom surface 705 and may be the thickest portion of the remaining TiN layer in the feature 701.
• the TiN layer remains as the bottom surface 705 to protect the underlying stack 710 during subsequent processing.
• FIG. 7C shows the feature 701 after an initial Mo layer 721 is deposited.
• the Mo layer 721 is deposited using an ALD process using a Mo halide precursor such as M0CI 5 with a reducing agent.
• the initial Mo layer 721 is selectively deposited on the TiN layer 715 in the feature and covers the sidewalls and the feature bottom.
• the Mo layer 721 is deposited directly on the TiN layer 715 and not on any dielectric surface.
• Figure 7D shows the feature 702 after a second etch process in operation 605 in Figure 6.
• the etch process may be similar to the clean and etch process used in Figure 7B.
• the feature 701 may undergo a soak process with an MoCl x precursor 719.
• the soak may be continuous.
• the soak may be multiple cycles of alternating doses of the MoCl x precursor and a purge gas.
• the etch in 7D may be a more aggressive etch than the etch shown in 7B.
• the etch removes the Mo layer and the TiN layer on the sidewalls of the feature.
• the dielectric material 713 forms the sidewall surfaces 711 after the etch.
• the etch leaves the TiN layer 715 and the Mo layer 721 on the bottom of the feature 701 so that they form the bottom surface 704 and protect the underlying stack 710.
• the clean removes any oxide or contaminants on the surfaces.
• Figure 7E shows the feature 701 after a Mo gap fill of the feature.
• the feature 701 is filled with a Mo fill 723.
• the TiN layer 715 remains between the Mo fill 723 and the underlying stack 710.
• the feature 701 may be filled using an ALD or a CVD process.
• the fill may be done with a Mo oxyhalide precursor containing oxygen, a Mo halide precursor not containing oxygen, or a combination thereof.
• the fill may be a conformal fill followed by gap fill as discussed above with respect to Figures 3C and 3D.
• the fill may be a bottom-up fill as discussed above with respect to Figures 3G and 3H.
• the fill may be performed in a single stage deposition, where the fill is continued using the same parameters, such as temperature and pressure, as the initial fill.
• the fill may be performed in multi-stage Mo deposition, where parameters may be changed during the deposition. For example, the deposition at a first stage may have a first temperature. After the first stage, the deposition may continue in a second stage and may have a second temperature higher than the first temperature. The increase in temperature may be used to increase the rate of Mo bulk fill, decreasing processing time.
• the Mo precursor and reactant concentrations may be varied at different stages.
• Figure 8 depicts a schematic illustration of an embodiment of an ALD process station 800 having a process chamber 802 for maintaining a low-pressure environment.
• a plurality of ALD process stations may be included in a common low-pressure process tool environment.
• Figure 9 depicts an embodiment of a multi-station processing tool 900.
• one or more hardware parameters of ALD process station 800 including those discussed in detail below, may be adjusted programmatically by one or more computer controllers 850.
• a process chamber may be a single station chamber.
• ALD process station 800 fluidly communicates with reactant delivery system 801a for delivering process gases to a distribution showerhead 806.
• Reactant delivery system 801a includes a mixing vessel 804 for blending and/or conditioning process gases, such as a Mo precursor-containing gas, a hydrogen-containing gas, an argon or other carrier gas, or other reactant-containing gas, for delivery to showerhead 806.
• One or more mixing vessel inlet valves 820 may control introduction of process gases to mixing vessel 804.
• deposition of an initial Mo layer is performed in process station 800 and in some embodiments, other operations such as in-situ clean or Mo gap fill may be performed in the same or another station of the multi-station processing tool 800 as further described below with respect to Figure 9.
• the embodiment of Figure 8 includes a vaporization point 803 for vaporizing liquid reactant to be supplied to the mixing vessel 804.
• vaporization point 803 may be a heated vaporizer.
• a liquid precursor or liquid reactant may be vaporized at a liquid injector (not shown).
• a liquid injector may inject pulses of a liquid reactant into a carrier gas stream upstream of the mixing vessel 804.
• a liquid injector may vaporize the reactant by flashing the liquid from a higher pressure to a lower pressure.
• a liquid injector may atomize the liquid into dispersed microdroplets that are subsequently vaporized in a heated delivery pipe.
• a liquid injector may be mounted directly to mixing vessel 804. In another scenario, a liquid injector may be mounted directly to showerhead 806.
• a liquid flow controller (LFC) upstream of vaporization point 803 may be provided for controlling a mass flow of liquid for vaporization and delivery to process chamber 802.
• the LFC may include a thermal mass flow meter (MFM) located downstream of the LFC.
• a plunger valve of the LFC may then be adjusted responsive to feedback control signals provided by a proportional-integral-derivative (PID) controller in electrical communication with the MFM.
• PID proportional-integral-derivative
• the LFC may be dynamically switched between a feedback control mode and a direct control mode. In some embodiments, this may be performed by disabling a sense tube of the LFC and the PID controller.
• showerhead 806 distributes process gases toward substrate 812.
• the substrate 812 is located beneath showerhead 806 and is shown resting on a pedestal 808.
• showerhead 806 may have any suitable shape and may have any suitable number and arrangement of ports for distributing process gases to substrate 812.
• pedestal 808 may be raised or lowered to expose substrate 812 to a volume between the substrate 812 and the showerhead 806.
• pedestal 808 may be temperature controlled via heater 810.
• Pedestal 808 may be set to any suitable temperature, such as between about 300°C and about 500°C during operations for performing various disclosed embodiments. It will be appreciated that, in some embodiments, pedestal height may be adjusted programmatically by a suitable computer controller 850. At the conclusion of a process phase, pedestal 808 may be lowered during another substrate transfer phase to allow removal of substrate 812 from pedestal 808.
• a position of showerhead 806 may be adjusted relative to pedestal
• pedestal 808 may include a rotational axis for rotating an orientation of substrate 812. It will be appreciated that, in some embodiments, one or more of these example adjustments may be performed programmatically by one or more suitable computer controllers 850.
• the computer controller 850 may include any of the features described below with respect to controller 850 of Figure 8.
• showerhead 806 and pedestal 808 electrically communicate with a radio frequency (RF) power supply 814 and matching network 816 for powering a plasma.
• the plasma energy may be controlled by controlling one or more of a process station pressure, a gas concentration, an RF source power, an RF source frequency, and a plasma power pulse timing.
• RF power supply 814 and matching network 816 may be operated at any suitable power to form a plasma having a desired composition of radical species.
• RF power supply 814 may provide RF power of any suitable frequency.
• RF power supply 814 may be configured to control high- and low-frequency RF power sources independently of one another.
• Example low-frequency RF frequencies may include, but are not limited to, frequencies between 0 kHz and 900 kHz.
• Example high-frequency RF frequencies may include, but are not limited to, frequencies between 1.8 MHz and 2.45 GHz, or greater than about 13.56 MHz, or greater than 27 MHz, or greater than 80 MHz, or greater than 60 MHz. It will be appreciated that any suitable parameters may be modulated discretely or continuously to provide plasma energy for the surface reactions.
• the plasma may be monitored in-situ by one or more plasma monitors.
• plasma power may be monitored by one or more voltage, current sensors (e.g., VI probes).
• plasma density and/or process gas concentration may be measured by one or more optical emission spectroscopy sensors (OES).
• OES optical emission spectroscopy sensors
• one or more plasma parameters may be programmatically adjusted based on measurements from such in-situ plasma monitors.
• an OES sensor may be used in a feedback loop for providing programmatic control of plasma power.
• other monitors may be used to monitor the plasma and other process characteristics. Such monitors may include, but are not limited to, infrared (IR) monitors, acoustic monitors, and pressure transducers.
• instructions for a controller 850 may be provided via input/output control (IOC) sequencing instructions.
• the instructions for setting conditions for a process phase may be included in a corresponding recipe phase of a process recipe.
• process recipe phases may be sequentially arranged, so that all instructions for a process phase are executed concurrently with that process phase.
• instructions for setting one or more reactor parameters may be included in a recipe phase.
• a first recipe phase may include instructions for setting a flow rate of an inert and/or a reactant gas (e.g., a Mo precursor), instructions for setting a flow rate of a carrier gas (such as argon), and time delay instructions for the first recipe phase.
• a reactant gas e.g., a Mo precursor
• a carrier gas such as argon
• a second, subsequent recipe phase may include instructions for modulating or stopping a flow rate of an inert and/or a reactant gas, and instructions for modulating a flow rate of a carrier or purge gas and time delay instructions for the second recipe phase.
• a third recipe phase may include instructions for modulating a flow rate of a second reactant gas such as F , instructions for modulating the flow rate of a carrier or purge gas, instructions for igniting a plasma, and time delay instructions for the third recipe phase.
• a fourth, subsequent recipe phase may include instructions for modulating or stopping a flow rate of an inert and/or a reactant gas, and instructions for modulating a flow rate of a carrier or purge gas and time delay instructions for the fourth recipe phase. It will be appreciated that these recipe phases may be further subdivided and/or iterated in any suitable way within the scope of the present disclosure.
• pressure control for process station 800 may be provided by butterfly valve 818. As shown in the embodiment of Figure 8, butterfly valve 818 throttles a vacuum provided by a downstream vacuum pump (not shown). However, in some embodiments, pressure control of process station 800 may also be adjusted by varying a flow rate of one or more gases introduced to the process station 800.
• Figure 9A and Figure 9B show examples of processing systems.
• Figure 9A shows an example of a processing system including multiple chambers.
• the system 900 includes a transfer module 903.
• the transfer module 903 provides a clean, vacuum environment to minimize risk of contamination of substrates being processed as they are moved between various modules.
• Mounted on the transfer module 903 is a multi-station chamber 909 capable of performing in-situ clean and/or ALD processes described above.
• Initial Mo layer deposition may be performed in the same or different station or chamber as the subsequent Mo gap fill.
• Chamber 909 may include multiple stations 911, 913, 915, and 917 that may sequentially perform operations in accordance with disclosed embodiments.
• chamber 909 may be configured such that station 911 performs an in-situ clean of the substrate using a MoCl x precursor, as described in Figure 2 as well as subsequent deposition of the initial Mo layer using the MoCl x precursor and 3 ⁇ 4, and stations 913, 915, and 917 perform ALD of bulk Mo using an molybdenum oxyhalide precursor and 3 ⁇ 4.
• chamber 909 may be configured such that station 911 performs in-situ clean, station 913 performs ALD of an initial Mo layer, and stations 913 and 914 deposition of bulk Mo.
• the chamber 909 may be configured to do parallel processing of substrates, with each station performing multiple processes sequentially.
• Two or more stations may be included in a multi-station chamber, e.g., 2-6, with the operations appropriately distributed.
• a two-station chamber may be configured to perform ALD of an initial Mo layer in a first station followed by ALD of bulk Mo in a second station.
• Stations may include a heated pedestal or substrate support, one or more gas inlets or showerhead or dispersion plate.
• Also mounted on the transfer module 903 may be one or more single or multi-station modules 907.
• a preclean as described above may be performed in a module 907, after which the substrate is transferred under vacuum to another module (e.g., another module 907 or chamber 909) for ALD.
• the system 900 also includes one or more wafer source modules 901, where wafers are stored before and after processing.
• An atmospheric robot (not shown) in the atmospheric transfer chamber 919 may first remove wafers from the source modules 901 to loadlocks 921.
• a wafer transfer device (generally a robot arm unit) in the transfer module 903 moves the wafers from loadlocks 921 to and among the modules mounted on the transfer module 903.
• ALD of Mo is performed in a first chamber, which may be part of a system like system 900, with CVD or PVD of W or Mo or other conductive material deposited as an overburden layer performed in another chamber, which may not be coupled to a common transfer module, but part of another system. .
• Figure 9B is an embodiment of a system 900, as described in 9A.
• the system 900 in Figure 9B has wafer source modules 901, a transfer module 903, atmospheric transfer chamber 919, and loadlocks 921, as described above with reference to Figure 9 A.
• the system in Figure B has three single station modules 957.
• the system 900 may be configured to sequentially perform operations in accordance with disclosed embodiments.
• the single station modules 957 may be configured so that a first module 957a performs a cleaning operation, a second module 957b performs ALD of an initial Mo layer using a MoC precursor, and a third module 957c performs ALD of bulk Mo using a molybdenum oxyhalide precursor.
• an in-situ clean may be optionally performed in second module 957b instead of or in addition to a preclean in first module 957a.
• Stations may include a heated pedestal or substrate support, one or more gas inlets or showerhead or dispersion plate as described above with reference to Figure 8.
• a system controller 929 is employed to control process conditions during deposition.
• the controller 929 will typically include one or more memory devices and one or more processors.
• a processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, etc.
• the controller 929 may control all the activities of the apparatus.
• the system controller 929 executes system control software, including sets of instructions for controlling the timing, mixture of gases, chamber pressure, chamber temperature, wafer temperature, radio frequency (RF) power levels, wafer chuck or pedestal position, and other parameters of a particular process.
• Other computer programs stored on memory devices associated with the controller 929 may be employed in some embodiments.
• the user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.
• System control logic may be configured in any suitable way.
• the logic can be designed or configured in hardware and/or software.
• the instructions for controlling the drive circuitry may be hard coded or provided as software.
• the instructions may be provided by “programming.” Such programming is understood to include logic of any form, including hard coded logic in digital signal processors, application-specific integrated circuits, and other devices which have specific algorithms implemented as hardware. Programming is also understood to include software or firmware instructions that may be executed on a general-purpose processor.
• System control software may be coded in any suitable computer readable programming language.
• the computer program code for controlling the Mo precursor pulses, hydrogen pulses, and argon flow, and other processes in a process sequence can be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran, or others. Compiled object code or script is executed by the processor to perform the tasks identified in the program. Also as indicated, the program code may be hard coded.
• the controller parameters relate to process conditions, such as, for example, process gas composition and flow rates, temperature, pressure, cooling gas pressure, substrate temperature, and chamber wall temperature. These parameters are provided to the user in the form of a recipe and may be entered utilizing the user interface.
• Signals for monitoring the process may be provided by analog and/or digital input connections of the system controller 929.
• the signals for controlling the process are output on the analog and digital output connections of the deposition apparatus.
• the system software may be designed or configured in many ways. For example, various chamber component subroutines or control objects may be written to control operation of the chamber components necessary to carry out the deposition processes in accordance with the disclosed embodiments. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.
• a controller 929 is part of a system, which may be part of the above-described examples.
• Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.).
• These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate.
• the electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems.
• the controller 929 may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
• temperature settings e.g., heating and/or cooling
• RF radio frequency
• the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like.
• the integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).
• Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system.
• the operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
• the controller 929 may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof.
• the controller 929 may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing.
• the computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.
• a remote computer e.g.
• a server can provide process recipes to a system over a network, which may include a local network or the Internet.
• the remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer.
• the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations.
• the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.
• the controller may be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein.
• example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a PVD chamber or module, a CVD chamber or module, an ALD chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
• ALE atomic layer etch
• the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
• the controller 929 may include various programs.
• a substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and to control the spacing between the substrate and other parts of the chamber such as a gas inlet and/or target.
• a process gas control program may include code for controlling gas composition, flow rates, pulse times, and optionally for flowing gas into the chamber prior to deposition in order to stabilize the pressure in the chamber.
• a pressure control program may include code for controlling the pressure in the chamber by regulating, e.g., a throttle valve in the exhaust system of the chamber.
• a heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas such as helium to the wafer chuck.
• Lithographic patterning of a film typically includes some or all of the following steps, each step provided with a number of possible tools: (1) application of photoresist on a workpiece, i.e., substrate, using a spin-on or spray-on tool; (2) curing of photoresist using a hot plate or furnace or UV curing tool; (3) exposing the photoresist to visible or UV or x-ray light with a tool such as a wafer stepper; (4) developing the resist so as to selectively remove resist and thereby pattern it using a tool such as a wet bench; (5) transferring the resist pattern into an underlying film or workpiece by using a dry or plasma-assisted etching tool; and (6) removing the resist using a tool such as an RF or microwave plasma resist stripper.
• a tool such as an RF or microwave plasma resist stripper.

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• 2022
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