JP2024501844A - フィーチャ内でのモリブデン堆積 - Google Patents

フィーチャ内でのモリブデン堆積 Download PDF

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Publication number
JP2024501844A
JP2024501844A JP2023539751A JP2023539751A JP2024501844A JP 2024501844 A JP2024501844 A JP 2024501844A JP 2023539751 A JP2023539751 A JP 2023539751A JP 2023539751 A JP2023539751 A JP 2023539751A JP 2024501844 A JP2024501844 A JP 2024501844A
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Japan
Prior art keywords
feature
molybdenum
precursor
layer
depositing
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Pending
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JP2023539751A
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English (en)
Japanese (ja)
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JP2024501844A5 (https=
JPWO2022150270A5 (https=
Inventor
ナ・ジョン－ソク
ソンベール・シュルティ・ヴィヴェク
シェ・ヤオ－ツン
マンディア・デヴィッド・ジョゼフ
ライ・チウキン・スティーヴン
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Lam Research Corp
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Lam Research Corp
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Publication of JP2024501844A publication Critical patent/JP2024501844A/ja
Publication of JP2024501844A5 publication Critical patent/JP2024501844A5/ja
Publication of JPWO2022150270A5 publication Critical patent/JPWO2022150270A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2023539751A 2021-01-05 2022-01-03 フィーチャ内でのモリブデン堆積 Pending JP2024501844A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163199525P 2021-01-05 2021-01-05
US63/199,525 2021-01-05
PCT/US2022/011053 WO2022150270A1 (en) 2021-01-05 2022-01-03 Molybdenum deposition in features

Publications (3)

Publication Number Publication Date
JP2024501844A true JP2024501844A (ja) 2024-01-16
JP2024501844A5 JP2024501844A5 (https=) 2025-03-10
JPWO2022150270A5 JPWO2022150270A5 (https=) 2025-03-10

Family

ID=82358074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023539751A Pending JP2024501844A (ja) 2021-01-05 2022-01-03 フィーチャ内でのモリブデン堆積

Country Status (6)

Country Link
US (1) US20240047269A1 (https=)
JP (1) JP2024501844A (https=)
KR (1) KR20230128428A (https=)
CN (1) CN115777140A (https=)
TW (1) TW202240664A (https=)
WO (1) WO2022150270A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
US12417945B2 (en) * 2022-02-14 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact features of semiconductor device and method of forming same
US20230323543A1 (en) * 2022-04-06 2023-10-12 Applied Materials, Inc. Integrated cleaning and selective molybdenum deposition processes
US12577655B2 (en) * 2022-08-15 2026-03-17 Applied Materials Inc. Methods for selective molybdenum deposition
US20240060175A1 (en) * 2022-08-19 2024-02-22 Applied Materials, Inc. Conformal molybdenum deposition
TW202436666A (zh) * 2022-10-21 2024-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於填充基板上之凹陷特徵之方法及相關結構及設備
TW202438705A (zh) * 2022-10-28 2024-10-01 美商蘭姆研究公司 選擇性鉬填充
WO2024112420A1 (en) * 2022-11-22 2024-05-30 Entegris, Inc. Methods for selective deposition of precursor materials and related devices
WO2024215581A1 (en) * 2023-04-10 2024-10-17 Lam Research Corporation Blended deposition and etch process for improved gapfill
US20240371654A1 (en) * 2023-05-03 2024-11-07 Applied Materials, Inc. Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration
JPWO2024253146A1 (https=) * 2023-06-09 2024-12-12
US20250054812A1 (en) * 2023-08-10 2025-02-13 Applied Materials, Inc. Selective bottom-up metal fill/cap on junction silicide by selective metal removal
WO2025111176A1 (en) * 2023-11-21 2025-05-30 Applied Materials, Inc. Methods for forming molybdenum surfaces with increased diffusion barrier
US20250329538A1 (en) * 2024-04-23 2025-10-23 Applied Materials, Inc. Selective plasma assisted deposition of a molybdenum silicide
US20250372449A1 (en) * 2024-06-04 2025-12-04 Applied Materials, Inc. Methods for forming low resistivity contacts
US20260101730A1 (en) * 2024-10-09 2026-04-09 Applied Materials, Inc. Damage-less hydrogen treatment for molybdenum oxide reduction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190067003A1 (en) * 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
JP2019044266A (ja) * 2017-08-30 2019-03-22 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 層形成方法
US20190371662A1 (en) * 2016-12-15 2019-12-05 Applied Materials, Inc. Nucleation-Free Gap Fill ALD Process
US20200131628A1 (en) * 2018-10-24 2020-04-30 Entegris, Inc. Method for forming molybdenum films on a substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101604054B1 (ko) * 2009-09-03 2016-03-16 삼성전자주식회사 반도체 소자 및 그 형성방법
US10727117B2 (en) * 2017-11-20 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
KR102709945B1 (ko) * 2017-11-22 2024-09-24 어플라이드 머티어리얼스, 인코포레이티드 텅스텐 막에서의 결함들을 감소시키거나 제거하는 방법들

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190371662A1 (en) * 2016-12-15 2019-12-05 Applied Materials, Inc. Nucleation-Free Gap Fill ALD Process
US20190067003A1 (en) * 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
JP2019044266A (ja) * 2017-08-30 2019-03-22 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 層形成方法
US20200131628A1 (en) * 2018-10-24 2020-04-30 Entegris, Inc. Method for forming molybdenum films on a substrate

Also Published As

Publication number Publication date
KR20230128428A (ko) 2023-09-05
US20240047269A1 (en) 2024-02-08
TW202240664A (zh) 2022-10-16
WO2022150270A1 (en) 2022-07-14
CN115777140A (zh) 2023-03-10

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