JP2024501844A5 - - Google Patents

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Publication number
JP2024501844A5
JP2024501844A5 JP2023539751A JP2023539751A JP2024501844A5 JP 2024501844 A5 JP2024501844 A5 JP 2024501844A5 JP 2023539751 A JP2023539751 A JP 2023539751A JP 2023539751 A JP2023539751 A JP 2023539751A JP 2024501844 A5 JP2024501844 A5 JP 2024501844A5
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JP
Japan
Application number
JP2023539751A
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Japanese (ja)
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JPWO2022150270A5 (https=
JP2024501844A (ja
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Publication date
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Priority claimed from PCT/US2022/011053 external-priority patent/WO2022150270A1/en
Publication of JP2024501844A publication Critical patent/JP2024501844A/ja
Publication of JP2024501844A5 publication Critical patent/JP2024501844A5/ja
Publication of JPWO2022150270A5 publication Critical patent/JPWO2022150270A5/ja
Pending legal-status Critical Current

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JP2023539751A 2021-01-05 2022-01-03 フィーチャ内でのモリブデン堆積 Pending JP2024501844A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163199525P 2021-01-05 2021-01-05
US63/199,525 2021-01-05
PCT/US2022/011053 WO2022150270A1 (en) 2021-01-05 2022-01-03 Molybdenum deposition in features

Publications (3)

Publication Number Publication Date
JP2024501844A JP2024501844A (ja) 2024-01-16
JP2024501844A5 true JP2024501844A5 (https=) 2025-03-10
JPWO2022150270A5 JPWO2022150270A5 (https=) 2025-03-10

Family

ID=82358074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023539751A Pending JP2024501844A (ja) 2021-01-05 2022-01-03 フィーチャ内でのモリブデン堆積

Country Status (6)

Country Link
US (1) US20240047269A1 (https=)
JP (1) JP2024501844A (https=)
KR (1) KR20230128428A (https=)
CN (1) CN115777140A (https=)
TW (1) TW202240664A (https=)
WO (1) WO2022150270A1 (https=)

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US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション 3d-nand用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
US12417945B2 (en) * 2022-02-14 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact features of semiconductor device and method of forming same
US20230323543A1 (en) * 2022-04-06 2023-10-12 Applied Materials, Inc. Integrated cleaning and selective molybdenum deposition processes
US12577655B2 (en) * 2022-08-15 2026-03-17 Applied Materials Inc. Methods for selective molybdenum deposition
US20240060175A1 (en) * 2022-08-19 2024-02-22 Applied Materials, Inc. Conformal molybdenum deposition
TW202436666A (zh) * 2022-10-21 2024-09-16 荷蘭商Asm Ip私人控股有限公司 用於填充基板上之凹陷特徵之方法及相關結構及設備
TW202438705A (zh) * 2022-10-28 2024-10-01 美商蘭姆研究公司 選擇性鉬填充
WO2024112420A1 (en) * 2022-11-22 2024-05-30 Entegris, Inc. Methods for selective deposition of precursor materials and related devices
WO2024215581A1 (en) * 2023-04-10 2024-10-17 Lam Research Corporation Blended deposition and etch process for improved gapfill
US20240371654A1 (en) * 2023-05-03 2024-11-07 Applied Materials, Inc. Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration
JPWO2024253146A1 (https=) * 2023-06-09 2024-12-12
US20250054812A1 (en) * 2023-08-10 2025-02-13 Applied Materials, Inc. Selective bottom-up metal fill/cap on junction silicide by selective metal removal
WO2025111176A1 (en) * 2023-11-21 2025-05-30 Applied Materials, Inc. Methods for forming molybdenum surfaces with increased diffusion barrier
US20250329538A1 (en) * 2024-04-23 2025-10-23 Applied Materials, Inc. Selective plasma assisted deposition of a molybdenum silicide
US20250372449A1 (en) * 2024-06-04 2025-12-04 Applied Materials, Inc. Methods for forming low resistivity contacts
US20260101730A1 (en) * 2024-10-09 2026-04-09 Applied Materials, Inc. Damage-less hydrogen treatment for molybdenum oxide reduction

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Publication number Priority date Publication date Assignee Title
KR101604054B1 (ko) * 2009-09-03 2016-03-16 삼성전자주식회사 반도체 소자 및 그 형성방법
JP6913752B2 (ja) * 2016-12-15 2021-08-04 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 核形成のない間隙充填aldプロセス
US20190067003A1 (en) * 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
TWI784036B (zh) * 2017-08-30 2022-11-21 荷蘭商Asm智慧財產控股公司 層形成方法
US10727117B2 (en) * 2017-11-20 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
KR102709945B1 (ko) * 2017-11-22 2024-09-24 어플라이드 머티어리얼스, 인코포레이티드 텅스텐 막에서의 결함들을 감소시키거나 제거하는 방법들
US20200131628A1 (en) * 2018-10-24 2020-04-30 Entegris, Inc. Method for forming molybdenum films on a substrate

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