JPWO2022123633A5 - - Google Patents

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Publication number
JPWO2022123633A5
JPWO2022123633A5 JP2022567907A JP2022567907A JPWO2022123633A5 JP WO2022123633 A5 JPWO2022123633 A5 JP WO2022123633A5 JP 2022567907 A JP2022567907 A JP 2022567907A JP 2022567907 A JP2022567907 A JP 2022567907A JP WO2022123633 A5 JPWO2022123633 A5 JP WO2022123633A5
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JP
Japan
Prior art keywords
layer
conductor layer
semiconductor pillar
gate
gate conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2022567907A
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English (en)
Japanese (ja)
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JPWO2022123633A1 (https=
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Priority claimed from PCT/JP2020/045497 external-priority patent/WO2022123633A1/ja
Publication of JPWO2022123633A1 publication Critical patent/JPWO2022123633A1/ja
Publication of JPWO2022123633A5 publication Critical patent/JPWO2022123633A5/ja
Ceased legal-status Critical Current

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JP2022567907A 2020-12-07 2020-12-07 Ceased JPWO2022123633A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/045497 WO2022123633A1 (ja) 2020-12-07 2020-12-07 柱状半導体メモリ装置とその製造方法

Publications (2)

Publication Number Publication Date
JPWO2022123633A1 JPWO2022123633A1 (https=) 2022-06-16
JPWO2022123633A5 true JPWO2022123633A5 (https=) 2023-08-23

Family

ID=81973304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022567907A Ceased JPWO2022123633A1 (https=) 2020-12-07 2020-12-07

Country Status (4)

Country Link
US (1) US20230337410A1 (https=)
JP (1) JPWO2022123633A1 (https=)
TW (1) TWI815229B (https=)
WO (1) WO2022123633A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4005805B2 (ja) * 2001-12-17 2007-11-14 株式会社東芝 半導体装置
JP2007317742A (ja) * 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
WO2009128337A1 (ja) * 2008-04-16 2009-10-22 日本電気株式会社 半導体装置およびその製造方法
KR102535448B1 (ko) * 2018-12-21 2023-05-26 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 3 차원 반도체 장치의 제조 방법
JP7138969B2 (ja) * 2019-04-05 2022-09-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 柱状半導体装置と、その製造方法

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