TWI815229B - 柱狀半導體記憶裝置及其製造方法 - Google Patents

柱狀半導體記憶裝置及其製造方法 Download PDF

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Publication number
TWI815229B
TWI815229B TW110144617A TW110144617A TWI815229B TW I815229 B TWI815229 B TW I815229B TW 110144617 A TW110144617 A TW 110144617A TW 110144617 A TW110144617 A TW 110144617A TW I815229 B TWI815229 B TW I815229B
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TW
Taiwan
Prior art keywords
layer
aforementioned
conductor layer
gate
sgt
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TW110144617A
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English (en)
Chinese (zh)
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TW202230751A (zh
Inventor
Nozomu Harada
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新加坡商新加坡優尼山帝斯電子私人有限公司
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Publication of TW202230751A publication Critical patent/TW202230751A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Semiconductor Memories (AREA)
TW110144617A 2020-12-07 2021-11-30 柱狀半導體記憶裝置及其製造方法 TWI815229B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/045497 2020-12-07
PCT/JP2020/045497 WO2022123633A1 (ja) 2020-12-07 2020-12-07 柱状半導体メモリ装置とその製造方法

Publications (2)

Publication Number Publication Date
TW202230751A TW202230751A (zh) 2022-08-01
TWI815229B true TWI815229B (zh) 2023-09-11

Family

ID=81973304

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TW110144617A TWI815229B (zh) 2020-12-07 2021-11-30 柱狀半導體記憶裝置及其製造方法

Country Status (4)

Country Link
US (1) US20230337410A1 (https=)
JP (1) JPWO2022123633A1 (https=)
TW (1) TWI815229B (https=)
WO (1) WO2022123633A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317742A (ja) * 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
WO2020202554A1 (ja) * 2019-04-05 2020-10-08 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 柱状半導体装置と、その製造方法
TW202040698A (zh) * 2018-12-21 2020-11-01 新加坡商新加坡優尼山帝斯電子私人有限公司 三維半導體裝置的製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4005805B2 (ja) * 2001-12-17 2007-11-14 株式会社東芝 半導体装置
WO2009128337A1 (ja) * 2008-04-16 2009-10-22 日本電気株式会社 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317742A (ja) * 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
TW202040698A (zh) * 2018-12-21 2020-11-01 新加坡商新加坡優尼山帝斯電子私人有限公司 三維半導體裝置的製造方法
WO2020202554A1 (ja) * 2019-04-05 2020-10-08 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 柱状半導体装置と、その製造方法

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US20230337410A1 (en) 2023-10-19
JPWO2022123633A1 (https=) 2022-06-16
TW202230751A (zh) 2022-08-01
WO2022123633A1 (ja) 2022-06-16

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