JPWO2022106956A1 - - Google Patents

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Publication number
JPWO2022106956A1
JPWO2022106956A1 JP2022563256A JP2022563256A JPWO2022106956A1 JP WO2022106956 A1 JPWO2022106956 A1 JP WO2022106956A1 JP 2022563256 A JP2022563256 A JP 2022563256A JP 2022563256 A JP2022563256 A JP 2022563256A JP WO2022106956 A1 JPWO2022106956 A1 JP WO2022106956A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022563256A
Other languages
Japanese (ja)
Other versions
JPWO2022106956A5 (cg-RX-API-DMAC10.html
JP7798787B2 (ja
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Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022106956A1 publication Critical patent/JPWO2022106956A1/ja
Publication of JPWO2022106956A5 publication Critical patent/JPWO2022106956A5/ja
Priority to JP2025282135A priority Critical patent/JP2026050393A/ja
Application granted granted Critical
Publication of JP7798787B2 publication Critical patent/JP7798787B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022563256A 2020-11-20 2021-11-09 半導体装置 Active JP7798787B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025282135A JP2026050393A (ja) 2020-11-20 2025-12-25 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020193215 2020-11-20
JP2020193215 2020-11-20
PCT/IB2021/060338 WO2022106956A1 (ja) 2020-11-20 2021-11-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025282135A Division JP2026050393A (ja) 2020-11-20 2025-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022106956A1 true JPWO2022106956A1 (cg-RX-API-DMAC10.html) 2022-05-27
JPWO2022106956A5 JPWO2022106956A5 (cg-RX-API-DMAC10.html) 2024-11-15
JP7798787B2 JP7798787B2 (ja) 2026-01-14

Family

ID=81708448

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022563256A Active JP7798787B2 (ja) 2020-11-20 2021-11-09 半導体装置
JP2025282135A Pending JP2026050393A (ja) 2020-11-20 2025-12-25 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025282135A Pending JP2026050393A (ja) 2020-11-20 2025-12-25 半導体装置

Country Status (4)

Country Link
US (1) US12537039B2 (cg-RX-API-DMAC10.html)
JP (2) JP7798787B2 (cg-RX-API-DMAC10.html)
CN (1) CN116457934A (cg-RX-API-DMAC10.html)
WO (1) WO2022106956A1 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230268355A1 (en) * 2022-02-23 2023-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device and method for fabricating the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168294A (ja) * 1999-12-09 2001-06-22 Seiko Epson Corp メモリデバイス及びその製造方法、並びに電子機器
JP2002197857A (ja) * 2000-05-26 2002-07-12 Sony Corp 強誘電体型不揮発性半導体メモリ及びその駆動方法
JP2004362753A (ja) * 2003-06-03 2004-12-24 Hitachi Global Storage Technologies Netherlands Bv 超低コストの固体メモリ
JP2010140919A (ja) * 2008-12-09 2010-06-24 Hitachi Ltd 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板

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US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
US6566698B2 (en) * 2000-05-26 2003-05-20 Sony Corporation Ferroelectric-type nonvolatile semiconductor memory and operation method thereof
EP1187140A3 (en) * 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
JP3591497B2 (ja) 2001-08-16 2004-11-17 ソニー株式会社 強誘電体型不揮発性半導体メモリ
US6773929B2 (en) * 2001-09-14 2004-08-10 Hynix Semiconductor Inc. Ferroelectric memory device and method for manufacturing the same
JP2003229541A (ja) * 2002-01-31 2003-08-15 Sony Corp 半導体記憶装置及びその製造方法
JP4132936B2 (ja) * 2002-04-16 2008-08-13 富士通株式会社 半導体装置の製造方法
KR100781737B1 (ko) 2004-07-22 2007-12-03 니폰덴신뎅와 가부시키가이샤 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물박막 및 그 제조방법
JP2007013011A (ja) * 2005-07-01 2007-01-18 Seiko Epson Corp 強誘電体メモリ装置及び表示用駆動ｉｃ
JP2007266494A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 半導体記憶装置
JP2008071897A (ja) * 2006-09-13 2008-03-27 Toshiba Corp 半導体メモリ及び半導体メモリの製造方法
JP4901515B2 (ja) * 2007-02-07 2012-03-21 株式会社東芝 強誘電体半導体記憶装置
JP2009116940A (ja) * 2007-11-05 2009-05-28 Toshiba Corp 半導体記憶装置
JP4660564B2 (ja) * 2008-03-11 2011-03-30 株式会社東芝 半導体記憶装置
JP2010044844A (ja) * 2008-08-18 2010-02-25 Toshiba Corp 半導体記憶装置
JP2011029258A (ja) * 2009-07-22 2011-02-10 Toshiba Corp 半導体記憶装置
JP2011066062A (ja) * 2009-09-15 2011-03-31 Toshiba Corp 半導体記憶装置
US12154817B1 (en) * 2010-11-18 2024-11-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
TWI492368B (zh) 2011-01-14 2015-07-11 半導體能源研究所股份有限公司 半導體記憶裝置
US10229874B1 (en) * 2018-03-22 2019-03-12 Micron Technology, Inc. Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays
JP2019201034A (ja) 2018-05-14 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
US10546629B1 (en) * 2018-10-10 2020-01-28 Micron Technology, Inc. Memory cell sensing based on precharging an access line using a sense amplifier
JP7555906B2 (ja) 2019-03-29 2024-09-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP7512255B2 (ja) 2019-03-29 2024-07-08 株式会社半導体エネルギー研究所 半導体装置
US10916548B1 (en) * 2019-07-25 2021-02-09 Micron Technology, Inc. Memory arrays with vertical access transistors
EP4447640A4 (en) * 2022-06-21 2025-04-30 Boe Technology Group Co., Ltd. SCOREBOARD AND DISPLAY DEVICE

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168294A (ja) * 1999-12-09 2001-06-22 Seiko Epson Corp メモリデバイス及びその製造方法、並びに電子機器
JP2002197857A (ja) * 2000-05-26 2002-07-12 Sony Corp 強誘電体型不揮発性半導体メモリ及びその駆動方法
JP2004362753A (ja) * 2003-06-03 2004-12-24 Hitachi Global Storage Technologies Netherlands Bv 超低コストの固体メモリ
JP2010140919A (ja) * 2008-12-09 2010-06-24 Hitachi Ltd 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板

Also Published As

Publication number Publication date
WO2022106956A1 (ja) 2022-05-27
JP7798787B2 (ja) 2026-01-14
US12537039B2 (en) 2026-01-27
JP2026050393A (ja) 2026-03-19
CN116457934A (zh) 2023-07-18
US20240013829A1 (en) 2024-01-11

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