JPWO2022106956A5 - - Google Patents
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- Publication number
- JPWO2022106956A5 JPWO2022106956A5 JP2022563256A JP2022563256A JPWO2022106956A5 JP WO2022106956 A5 JPWO2022106956 A5 JP WO2022106956A5 JP 2022563256 A JP2022563256 A JP 2022563256A JP 2022563256 A JP2022563256 A JP 2022563256A JP WO2022106956 A5 JPWO2022106956 A5 JP WO2022106956A5
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- transistor
- electrically connected
- semiconductor device
- capacitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025282135A JP2026050393A (ja) | 2020-11-20 | 2025-12-25 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020193215 | 2020-11-20 | ||
| JP2020193215 | 2020-11-20 | ||
| PCT/IB2021/060338 WO2022106956A1 (ja) | 2020-11-20 | 2021-11-09 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025282135A Division JP2026050393A (ja) | 2020-11-20 | 2025-12-25 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022106956A1 JPWO2022106956A1 (cg-RX-API-DMAC10.html) | 2022-05-27 |
| JPWO2022106956A5 true JPWO2022106956A5 (cg-RX-API-DMAC10.html) | 2024-11-15 |
| JP7798787B2 JP7798787B2 (ja) | 2026-01-14 |
Family
ID=81708448
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022563256A Active JP7798787B2 (ja) | 2020-11-20 | 2021-11-09 | 半導体装置 |
| JP2025282135A Pending JP2026050393A (ja) | 2020-11-20 | 2025-12-25 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025282135A Pending JP2026050393A (ja) | 2020-11-20 | 2025-12-25 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12537039B2 (cg-RX-API-DMAC10.html) |
| JP (2) | JP7798787B2 (cg-RX-API-DMAC10.html) |
| CN (1) | CN116457934A (cg-RX-API-DMAC10.html) |
| WO (1) | WO2022106956A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230268355A1 (en) * | 2022-02-23 | 2023-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device and method for fabricating the same |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523964A (en) * | 1994-04-07 | 1996-06-04 | Symetrix Corporation | Ferroelectric non-volatile memory unit |
| JP3620041B2 (ja) * | 1999-12-09 | 2005-02-16 | セイコーエプソン株式会社 | メモリデバイス及びその製造方法、並びに電子機器 |
| US6566698B2 (en) * | 2000-05-26 | 2003-05-20 | Sony Corporation | Ferroelectric-type nonvolatile semiconductor memory and operation method thereof |
| JP4670177B2 (ja) | 2000-05-26 | 2011-04-13 | ソニー株式会社 | 強誘電体型不揮発性半導体メモリ及びその駆動方法 |
| EP1187140A3 (en) * | 2000-09-05 | 2002-09-11 | Matsushita Electric Industrial Co., Ltd. | Method for driving semiconductor memory |
| JP3591497B2 (ja) | 2001-08-16 | 2004-11-17 | ソニー株式会社 | 強誘電体型不揮発性半導体メモリ |
| US6773929B2 (en) * | 2001-09-14 | 2004-08-10 | Hynix Semiconductor Inc. | Ferroelectric memory device and method for manufacturing the same |
| JP2003229541A (ja) * | 2002-01-31 | 2003-08-15 | Sony Corp | 半導体記憶装置及びその製造方法 |
| JP4132936B2 (ja) * | 2002-04-16 | 2008-08-13 | 富士通株式会社 | 半導体装置の製造方法 |
| US7291878B2 (en) | 2003-06-03 | 2007-11-06 | Hitachi Global Storage Technologies Netherlands B.V. | Ultra low-cost solid-state memory |
| KR100781737B1 (ko) | 2004-07-22 | 2007-12-03 | 니폰덴신뎅와 가부시키가이샤 | 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물박막 및 그 제조방법 |
| JP2007013011A (ja) * | 2005-07-01 | 2007-01-18 | Seiko Epson Corp | 強誘電体メモリ装置及び表示用駆動ｉｃ |
| JP2007266494A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | 半導体記憶装置 |
| JP2008071897A (ja) * | 2006-09-13 | 2008-03-27 | Toshiba Corp | 半導体メモリ及び半導体メモリの製造方法 |
| JP4901515B2 (ja) * | 2007-02-07 | 2012-03-21 | 株式会社東芝 | 強誘電体半導体記憶装置 |
| JP2009116940A (ja) * | 2007-11-05 | 2009-05-28 | Toshiba Corp | 半導体記憶装置 |
| JP4660564B2 (ja) * | 2008-03-11 | 2011-03-30 | 株式会社東芝 | 半導体記憶装置 |
| JP2010044844A (ja) * | 2008-08-18 | 2010-02-25 | Toshiba Corp | 半導体記憶装置 |
| JP2010140919A (ja) | 2008-12-09 | 2010-06-24 | Hitachi Ltd | 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板 |
| JP2011029258A (ja) * | 2009-07-22 | 2011-02-10 | Toshiba Corp | 半導体記憶装置 |
| JP2011066062A (ja) * | 2009-09-15 | 2011-03-31 | Toshiba Corp | 半導体記憶装置 |
| US12154817B1 (en) * | 2010-11-18 | 2024-11-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| TWI492368B (zh) | 2011-01-14 | 2015-07-11 | 半導體能源研究所股份有限公司 | 半導體記憶裝置 |
| US10229874B1 (en) * | 2018-03-22 | 2019-03-12 | Micron Technology, Inc. | Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays |
| JP2019201034A (ja) | 2018-05-14 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
| US10546629B1 (en) * | 2018-10-10 | 2020-01-28 | Micron Technology, Inc. | Memory cell sensing based on precharging an access line using a sense amplifier |
| JP7555906B2 (ja) | 2019-03-29 | 2024-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP7512255B2 (ja) | 2019-03-29 | 2024-07-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10916548B1 (en) * | 2019-07-25 | 2021-02-09 | Micron Technology, Inc. | Memory arrays with vertical access transistors |
| EP4447640A4 (en) * | 2022-06-21 | 2025-04-30 | Boe Technology Group Co., Ltd. | SCOREBOARD AND DISPLAY DEVICE |
-
2021
- 2021-11-09 CN CN202180077758.3A patent/CN116457934A/zh active Pending
- 2021-11-09 JP JP2022563256A patent/JP7798787B2/ja active Active
- 2021-11-09 WO PCT/IB2021/060338 patent/WO2022106956A1/ja not_active Ceased
- 2021-11-09 US US18/035,013 patent/US12537039B2/en active Active
-
2025
- 2025-12-25 JP JP2025282135A patent/JP2026050393A/ja active Pending