JPWO2022050405A1 - - Google Patents

Info

Publication number
JPWO2022050405A1
JPWO2022050405A1 JP2022546996A JP2022546996A JPWO2022050405A1 JP WO2022050405 A1 JPWO2022050405 A1 JP WO2022050405A1 JP 2022546996 A JP2022546996 A JP 2022546996A JP 2022546996 A JP2022546996 A JP 2022546996A JP WO2022050405 A1 JPWO2022050405 A1 JP WO2022050405A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022546996A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022050405A1 publication Critical patent/JPWO2022050405A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Materials For Photolithography (AREA)
JP2022546996A 2020-09-07 2021-09-06 Pending JPWO2022050405A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020149793 2020-09-07
PCT/JP2021/032640 WO2022050405A1 (ja) 2020-09-07 2021-09-06 ウェハー処理方法

Publications (1)

Publication Number Publication Date
JPWO2022050405A1 true JPWO2022050405A1 (ja) 2022-03-10

Family

ID=80492242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022546996A Pending JPWO2022050405A1 (ja) 2020-09-07 2021-09-06

Country Status (6)

Country Link
US (1) US20230317527A1 (ja)
EP (1) EP4207258A4 (ja)
JP (1) JPWO2022050405A1 (ja)
KR (1) KR20230062820A (ja)
CN (1) CN115989571A (ja)
WO (1) WO2022050405A1 (ja)

Family Cites Families (26)

* Cited by examiner, † Cited by third party
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JPH02285627A (ja) * 1989-04-27 1990-11-22 Tokyo Electron Ltd 露光方法
JPH11191524A (ja) * 1997-12-26 1999-07-13 Sharp Corp フォトリソプロセス装置
TWI363251B (en) 2003-07-30 2012-05-01 Nissan Chemical Ind Ltd Sublayer coating-forming composition for lithography containing compound having protected carboxy group
CN101910948B (zh) 2008-01-30 2012-11-07 日产化学工业株式会社 含有硫原子的抗蚀剂下层膜形成用组合物以及抗蚀剂图案的形成方法
CN102803324B (zh) 2009-06-19 2015-09-16 日产化学工业株式会社 咔唑酚醛清漆树脂
KR101794951B1 (ko) 2009-08-19 2017-11-07 닛산 가가쿠 고교 가부시키 가이샤 지방족환과 방향족환을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물
KR101947105B1 (ko) 2010-02-19 2019-02-13 닛산 가가쿠 가부시키가이샤 질소 함유환을 가지는 실리콘 함유 레지스트 하층막 형성 조성물
JP6066092B2 (ja) 2011-09-29 2017-01-25 日産化学工業株式会社 ジアリールアミンノボラック樹脂
EP2832807A4 (en) 2012-03-27 2015-10-21 Nissan Chemical Ind Ltd SINGLE-LAYER-FORMING COMPOSITION FOR SELF-BUILDING FILMS
JP2014020961A (ja) 2012-07-19 2014-02-03 Sharp Corp 異物検出方法および異物検査装置
KR102357731B1 (ko) 2012-12-18 2022-02-08 닛산 가가쿠 가부시키가이샤 다환방향족 비닐화합물을 포함하는 자기조직화막의 하층막 형성조성물
KR102200511B1 (ko) 2013-01-24 2021-01-11 닛산 가가쿠 가부시키가이샤 리소그래피용 레지스트 상층막 형성 조성물 및 이것을 이용한 반도체장치의 제조방법
KR102276783B1 (ko) 2013-06-26 2021-07-14 닛산 가가쿠 가부시키가이샤 치환된 가교성 화합물을 포함하는 레지스트 하층막 형성 조성물
US9793131B2 (en) 2013-08-28 2017-10-17 Nissan Chemical Industries, Ltd. Pattern forming method using resist underlayer film
US9977331B2 (en) 2014-02-26 2018-05-22 Nissan Chemical Industries, Ltd. Resist overlayer film forming composition and method for producing semiconductor device including the same
CN103887178B (zh) * 2014-03-27 2017-01-04 西安交通大学 一种应变垂直mos器件的制造方法
JP6540971B2 (ja) 2014-08-25 2019-07-10 日産化学株式会社 Ｓｏｃパターン上でのパターン反転のための被覆用組成物
CN108699389B (zh) 2016-02-24 2020-10-27 日产化学株式会社 含有硅的图案反转用被覆剂
CN109073977B (zh) 2016-04-28 2022-04-05 日产化学株式会社 抗蚀剂下层膜形成用组合物
US10865262B2 (en) 2016-09-13 2020-12-15 Nissan Chemical Corporation Upper-layer film forming composition and method for producing a phase-separated pattern
TWI758326B (zh) 2016-09-16 2022-03-21 日商日產化學工業股份有限公司 保護膜形成組成物
WO2019124475A1 (ja) 2017-12-22 2019-06-27 日産化学株式会社 アセタール構造を有する保護膜形成組成物
JP7302480B2 (ja) 2017-12-22 2023-07-04 日産化学株式会社 ジオール構造を有する保護膜形成組成物
KR20200118007A (ko) 2018-02-02 2020-10-14 닛산 가가쿠 가부시키가이샤 디설파이드구조를 갖는 레지스트 하층막형성 조성물
CN111758075A (zh) * 2018-02-20 2020-10-09 日产化学株式会社 包含加成了芳香族乙烯基化合物的含有三芳基二胺的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
KR20210023977A (ko) * 2018-06-21 2021-03-04 도쿄엘렉트론가부시키가이샤 기판의 결함 검사 방법, 기억 매체 및 기판의 결함 검사 장치

Also Published As

Publication number Publication date
EP4207258A4 (en) 2024-03-13
EP4207258A1 (en) 2023-07-05
US20230317527A1 (en) 2023-10-05
KR20230062820A (ko) 2023-05-09
CN115989571A (zh) 2023-04-18
WO2022050405A1 (ja) 2022-03-10

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Effective date: 20240619