JPWO2021192854A5 - - Google Patents
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- JPWO2021192854A5 JPWO2021192854A5 JP2022509458A JP2022509458A JPWO2021192854A5 JP WO2021192854 A5 JPWO2021192854 A5 JP WO2021192854A5 JP 2022509458 A JP2022509458 A JP 2022509458A JP 2022509458 A JP2022509458 A JP 2022509458A JP WO2021192854 A5 JPWO2021192854 A5 JP WO2021192854A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- laser
- layer
- stress
- absorption layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims description 29
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 230000032798 delamination Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 3
- 238000012986 modification Methods 0.000 claims 2
- 230000004048 modification Effects 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020053183 | 2020-03-24 | ||
| JP2020053183 | 2020-03-24 | ||
| PCT/JP2021/007940 WO2021192854A1 (ja) | 2020-03-24 | 2021-03-02 | 基板処理方法及び基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021192854A1 JPWO2021192854A1 (https=) | 2021-09-30 |
| JPWO2021192854A5 true JPWO2021192854A5 (https=) | 2022-11-18 |
| JP7499845B2 JP7499845B2 (ja) | 2024-06-14 |
Family
ID=77892476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022509458A Active JP7499845B2 (ja) | 2020-03-24 | 2021-03-02 | 基板処理方法及び基板処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240087900A1 (https=) |
| JP (1) | JP7499845B2 (https=) |
| KR (1) | KR20220158024A (https=) |
| CN (1) | CN115335965B (https=) |
| TW (1) | TWI871441B (https=) |
| WO (1) | WO2021192854A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023082761A (ja) * | 2021-12-03 | 2023-06-15 | 株式会社ディスコ | 支持板の除去方法及び板状部材の加工方法 |
| JP7814972B2 (ja) * | 2022-02-22 | 2026-02-17 | 東京エレクトロン株式会社 | 重合基板の処理方法及び基板処理システム |
| WO2024024191A1 (ja) * | 2022-07-27 | 2024-02-01 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法及びデバイス構造 |
| US20260042171A1 (en) * | 2022-08-09 | 2026-02-12 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| JPWO2024142947A1 (https=) * | 2022-12-26 | 2024-07-04 | ||
| CN115971642B (zh) * | 2022-12-30 | 2024-11-15 | 山东天岳先进科技股份有限公司 | 一种基于激光致裂的碳化硅剥离片及加工方法 |
| KR20250144436A (ko) * | 2023-03-10 | 2025-10-10 | 덴카 주식회사 | 판형 기재의 가공 방법 |
| WO2026079048A1 (ja) * | 2024-10-09 | 2026-04-16 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| EP1758169A3 (en) * | 1996-08-27 | 2007-05-23 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
| US7923306B2 (en) * | 2004-06-18 | 2011-04-12 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laser beam spots |
| WO2006009818A2 (en) | 2004-06-18 | 2006-01-26 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laser beam spots |
| JP4816390B2 (ja) | 2005-11-16 | 2011-11-16 | 株式会社デンソー | 半導体チップの製造方法および半導体チップ |
| JP2007220749A (ja) | 2006-02-14 | 2007-08-30 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2007254185A (ja) * | 2006-03-22 | 2007-10-04 | Seiko Epson Corp | レーザスクライブ方法、表示装置の製造方法、基板、表示装置、電子機器 |
| JP2018117060A (ja) * | 2017-01-19 | 2018-07-26 | 株式会社ブイ・テクノロジー | 剥離基板及びレーザリフトオフ方法 |
| JP6864563B2 (ja) | 2017-06-07 | 2021-04-28 | 株式会社ディスコ | 被加工物の加工方法 |
| KR102903523B1 (ko) * | 2018-04-27 | 2025-12-23 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 및 기판 처리 방법 |
| KR102944322B1 (ko) | 2018-07-19 | 2026-03-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 및 기판 처리 방법 |
-
2021
- 2021-03-02 CN CN202180021036.6A patent/CN115335965B/zh active Active
- 2021-03-02 JP JP2022509458A patent/JP7499845B2/ja active Active
- 2021-03-02 KR KR1020227036631A patent/KR20220158024A/ko active Pending
- 2021-03-02 US US17/907,217 patent/US20240087900A1/en active Pending
- 2021-03-02 WO PCT/JP2021/007940 patent/WO2021192854A1/ja not_active Ceased
- 2021-03-03 TW TW110107474A patent/TWI871441B/zh active
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