JPWO2021192854A1 - - Google Patents

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Publication number
JPWO2021192854A1
JPWO2021192854A1 JP2022509458A JP2022509458A JPWO2021192854A1 JP WO2021192854 A1 JPWO2021192854 A1 JP WO2021192854A1 JP 2022509458 A JP2022509458 A JP 2022509458A JP 2022509458 A JP2022509458 A JP 2022509458A JP WO2021192854 A1 JPWO2021192854 A1 JP WO2021192854A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022509458A
Other languages
Japanese (ja)
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JPWO2021192854A5 (https=
JP7499845B2 (ja
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Publication of JPWO2021192854A5 publication Critical patent/JPWO2021192854A5/ja
Application granted granted Critical
Publication of JP7499845B2 publication Critical patent/JP7499845B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
JP2022509458A 2020-03-24 2021-03-02 基板処理方法及び基板処理装置 Active JP7499845B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020053183 2020-03-24
JP2020053183 2020-03-24
PCT/JP2021/007940 WO2021192854A1 (ja) 2020-03-24 2021-03-02 基板処理方法及び基板処理装置

Publications (3)

Publication Number Publication Date
JPWO2021192854A1 true JPWO2021192854A1 (https=) 2021-09-30
JPWO2021192854A5 JPWO2021192854A5 (https=) 2022-11-18
JP7499845B2 JP7499845B2 (ja) 2024-06-14

Family

ID=77892476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022509458A Active JP7499845B2 (ja) 2020-03-24 2021-03-02 基板処理方法及び基板処理装置

Country Status (6)

Country Link
US (1) US20240087900A1 (https=)
JP (1) JP7499845B2 (https=)
KR (1) KR20220158024A (https=)
CN (1) CN115335965B (https=)
TW (1) TWI871441B (https=)
WO (1) WO2021192854A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115971642A (zh) * 2022-12-30 2023-04-18 山东天岳先进科技股份有限公司 一种基于激光致裂的碳化硅剥离片及加工方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023082761A (ja) * 2021-12-03 2023-06-15 株式会社ディスコ 支持板の除去方法及び板状部材の加工方法
JP7814972B2 (ja) * 2022-02-22 2026-02-17 東京エレクトロン株式会社 重合基板の処理方法及び基板処理システム
JP7815447B2 (ja) * 2022-07-27 2026-02-17 東京エレクトロン株式会社 基板処理システム、基板処理方法及びデバイス構造
CN119631159A (zh) * 2022-08-09 2025-03-14 东京毅力科创株式会社 基板处理装置和基板处理方法
TW202430304A (zh) * 2022-12-26 2024-08-01 日商東京威力科創股份有限公司 疊合基板、基板處理方法及基板處理系統
JPWO2024190671A1 (https=) * 2023-03-10 2024-09-19
WO2026079048A1 (ja) * 2024-10-09 2026-04-16 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

Citations (7)

* Cited by examiner, † Cited by third party
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JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2007165848A (ja) * 2005-11-16 2007-06-28 Denso Corp 半導体チップの製造方法
JP2008503877A (ja) * 2004-06-18 2008-02-07 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 複数のレーザビームスポットを使用する半導体構造加工
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
JP2018207009A (ja) * 2017-06-07 2018-12-27 株式会社ディスコ 被加工物の加工方法
WO2019208298A1 (ja) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020017599A1 (ja) * 2018-07-19 2020-01-23 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
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KR100481994B1 (ko) * 1996-08-27 2005-12-01 세이코 엡슨 가부시키가이샤 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치
US7425471B2 (en) * 2004-06-18 2008-09-16 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
KR100858983B1 (ko) * 2005-11-16 2008-09-17 가부시키가이샤 덴소 반도체 장치 및 반도체 기판 다이싱 방법
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法
JP2007254185A (ja) * 2006-03-22 2007-10-04 Seiko Epson Corp レーザスクライブ方法、表示装置の製造方法、基板、表示装置、電子機器
CN106663391B (zh) * 2013-12-02 2019-09-03 株式会社半导体能源研究所 显示装置及其制造方法
JP6980444B2 (ja) * 2017-07-28 2021-12-15 浜松ホトニクス株式会社 積層型素子の製造方法
JP7047922B2 (ja) * 2018-09-04 2022-04-05 株式会社村田製作所 Ｍｅｍｓデバイスの製造方法及びｍｅｍｓデバイス
US11024501B2 (en) * 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2008503877A (ja) * 2004-06-18 2008-02-07 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 複数のレーザビームスポットを使用する半導体構造加工
JP2007165848A (ja) * 2005-11-16 2007-06-28 Denso Corp 半導体チップの製造方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
JP2018207009A (ja) * 2017-06-07 2018-12-27 株式会社ディスコ 被加工物の加工方法
WO2019208298A1 (ja) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020017599A1 (ja) * 2018-07-19 2020-01-23 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115971642A (zh) * 2022-12-30 2023-04-18 山东天岳先进科技股份有限公司 一种基于激光致裂的碳化硅剥离片及加工方法

Also Published As

Publication number Publication date
WO2021192854A1 (ja) 2021-09-30
KR20220158024A (ko) 2022-11-29
TW202205398A (zh) 2022-02-01
CN115335965B (zh) 2025-10-14
US20240087900A1 (en) 2024-03-14
CN115335965A (zh) 2022-11-11
TWI871441B (zh) 2025-02-01
JP7499845B2 (ja) 2024-06-14

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