TWI871441B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

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Publication number
TWI871441B
TWI871441B TW110107474A TW110107474A TWI871441B TW I871441 B TWI871441 B TW I871441B TW 110107474 A TW110107474 A TW 110107474A TW 110107474 A TW110107474 A TW 110107474A TW I871441 B TWI871441 B TW I871441B
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TW
Taiwan
Prior art keywords
laser
layer
peeling
substrate
wafer
Prior art date
Application number
TW110107474A
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English (en)
Chinese (zh)
Other versions
TW202205398A (zh
Inventor
田之上隼斗
山下陽平
Original Assignee
日商東京威力科創股份有限公司
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202205398A publication Critical patent/TW202205398A/zh
Application granted granted Critical
Publication of TWI871441B publication Critical patent/TWI871441B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
TW110107474A 2020-03-24 2021-03-03 基板處理方法及基板處理裝置 TWI871441B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-053183 2020-03-24
JP2020053183 2020-03-24

Publications (2)

Publication Number Publication Date
TW202205398A TW202205398A (zh) 2022-02-01
TWI871441B true TWI871441B (zh) 2025-02-01

Family

ID=77892476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110107474A TWI871441B (zh) 2020-03-24 2021-03-03 基板處理方法及基板處理裝置

Country Status (6)

Country Link
US (1) US20240087900A1 (https=)
JP (1) JP7499845B2 (https=)
KR (1) KR20220158024A (https=)
CN (1) CN115335965B (https=)
TW (1) TWI871441B (https=)
WO (1) WO2021192854A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023082761A (ja) * 2021-12-03 2023-06-15 株式会社ディスコ 支持板の除去方法及び板状部材の加工方法
JP7814972B2 (ja) * 2022-02-22 2026-02-17 東京エレクトロン株式会社 重合基板の処理方法及び基板処理システム
WO2024024191A1 (ja) * 2022-07-27 2024-02-01 東京エレクトロン株式会社 基板処理システム、基板処理方法及びデバイス構造
US20260042171A1 (en) * 2022-08-09 2026-02-12 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JPWO2024142947A1 (https=) * 2022-12-26 2024-07-04
CN115971642B (zh) * 2022-12-30 2024-11-15 山东天岳先进科技股份有限公司 一种基于激光致裂的碳化硅剥离片及加工方法
KR20250144436A (ko) * 2023-03-10 2025-10-10 덴카 주식회사 판형 기재의 가공 방법
WO2026079048A1 (ja) * 2024-10-09 2026-04-16 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2007165848A (ja) * 2005-11-16 2007-06-28 Denso Corp 半導体チップの製造方法
WO2019208298A1 (ja) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020017599A1 (ja) * 2018-07-19 2020-01-23 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1758169A3 (en) * 1996-08-27 2007-05-23 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US7923306B2 (en) * 2004-06-18 2011-04-12 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots
WO2006009818A2 (en) 2004-06-18 2006-01-26 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法
JP2007254185A (ja) * 2006-03-22 2007-10-04 Seiko Epson Corp レーザスクライブ方法、表示装置の製造方法、基板、表示装置、電子機器
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
JP6864563B2 (ja) 2017-06-07 2021-04-28 株式会社ディスコ 被加工物の加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2007165848A (ja) * 2005-11-16 2007-06-28 Denso Corp 半導体チップの製造方法
WO2019208298A1 (ja) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020017599A1 (ja) * 2018-07-19 2020-01-23 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Also Published As

Publication number Publication date
CN115335965A (zh) 2022-11-11
CN115335965B (zh) 2025-10-14
US20240087900A1 (en) 2024-03-14
WO2021192854A1 (ja) 2021-09-30
TW202205398A (zh) 2022-02-01
JPWO2021192854A1 (https=) 2021-09-30
KR20220158024A (ko) 2022-11-29
JP7499845B2 (ja) 2024-06-14

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