JPWO2021149650A1 - - Google Patents
Info
- Publication number
- JPWO2021149650A1 JPWO2021149650A1 JP2021572728A JP2021572728A JPWO2021149650A1 JP WO2021149650 A1 JPWO2021149650 A1 JP WO2021149650A1 JP 2021572728 A JP2021572728 A JP 2021572728A JP 2021572728 A JP2021572728 A JP 2021572728A JP WO2021149650 A1 JPWO2021149650 A1 JP WO2021149650A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020007247 | 2020-01-21 | ||
| JP2020007247 | 2020-01-21 | ||
| PCT/JP2021/001525 WO2021149650A1 (ja) | 2020-01-21 | 2021-01-18 | フォトセンサ及び距離測定システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021149650A1 true JPWO2021149650A1 (https=) | 2021-07-29 |
| JPWO2021149650A5 JPWO2021149650A5 (https=) | 2022-10-12 |
| JP7570037B2 JP7570037B2 (ja) | 2024-10-21 |
Family
ID=76992435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021572728A Active JP7570037B2 (ja) | 2020-01-21 | 2021-01-18 | フォトセンサ及び距離測定システム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12328960B2 (https=) |
| JP (1) | JP7570037B2 (https=) |
| CN (1) | CN114981970A (https=) |
| WO (1) | WO2021149650A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7614855B2 (ja) * | 2021-01-22 | 2025-01-16 | キヤノン株式会社 | 光電変換装置、光検出システム |
| JP7653946B2 (ja) * | 2022-03-15 | 2025-03-31 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置及び移動体 |
| JP2023178687A (ja) * | 2022-06-06 | 2023-12-18 | キヤノン株式会社 | 光電変換装置、光電変換システム |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009014460A (ja) * | 2007-07-03 | 2009-01-22 | Hamamatsu Photonics Kk | 裏面入射型測距センサ及び測距装置 |
| WO2011071483A1 (en) * | 2009-12-07 | 2011-06-16 | Array Optronix, Inc. | Back-illuminated si photomultipliers: structure and fabrication methods |
| WO2017043068A1 (ja) * | 2015-09-09 | 2017-03-16 | パナソニックＩｐマネジメント株式会社 | 固体撮像素子 |
| WO2018174090A1 (ja) * | 2017-03-22 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び信号処理装置 |
| JP2018157156A (ja) * | 2017-03-21 | 2018-10-04 | パナソニックＩｐマネジメント株式会社 | 固体撮像素子及びその製造方法 |
| JP2018201005A (ja) * | 2016-10-18 | 2018-12-20 | ソニーセミコンダクタソリューションズ株式会社 | 光検出器 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4602287B2 (ja) | 2006-06-14 | 2010-12-22 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
| EP3002794B1 (en) | 2006-07-03 | 2020-08-19 | Hamamatsu Photonics K.K. | Photodiode array |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
| US8773562B1 (en) * | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
| JP2016092178A (ja) * | 2014-11-04 | 2016-05-23 | 株式会社リコー | 固体撮像素子 |
| CN107615486A (zh) * | 2015-03-26 | 2018-01-19 | 松下知识产权经营株式会社 | 固体摄像元件及具备该固体摄像元件的摄像装置 |
| EP3087921A1 (en) | 2015-04-27 | 2016-11-02 | Coronary Technologies SARL | Computer-implemented method for identifying zones of stasis and stenosis in blood vessels |
| KR102497812B1 (ko) * | 2015-08-10 | 2023-02-09 | 삼성전자주식회사 | 이미지 센서 |
| US10497818B2 (en) * | 2016-07-29 | 2019-12-03 | Canon Kabushiki Kaisha | Photodetection device and photodetection system |
| CN111682039B (zh) * | 2016-09-23 | 2021-08-03 | 苹果公司 | 堆叠式背面照明spad阵列 |
| JP6855287B2 (ja) * | 2017-03-08 | 2021-04-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
| JP7174932B2 (ja) * | 2018-03-23 | 2022-11-18 | パナソニックＩｐマネジメント株式会社 | 固体撮像素子 |
| JP7445397B2 (ja) * | 2019-07-31 | 2024-03-07 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
-
2021
- 2021-01-18 JP JP2021572728A patent/JP7570037B2/ja active Active
- 2021-01-18 WO PCT/JP2021/001525 patent/WO2021149650A1/ja not_active Ceased
- 2021-01-18 US US17/792,912 patent/US12328960B2/en active Active
- 2021-01-18 CN CN202180009299.5A patent/CN114981970A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009014460A (ja) * | 2007-07-03 | 2009-01-22 | Hamamatsu Photonics Kk | 裏面入射型測距センサ及び測距装置 |
| WO2011071483A1 (en) * | 2009-12-07 | 2011-06-16 | Array Optronix, Inc. | Back-illuminated si photomultipliers: structure and fabrication methods |
| WO2017043068A1 (ja) * | 2015-09-09 | 2017-03-16 | パナソニックＩｐマネジメント株式会社 | 固体撮像素子 |
| JP2018201005A (ja) * | 2016-10-18 | 2018-12-20 | ソニーセミコンダクタソリューションズ株式会社 | 光検出器 |
| JP2018157156A (ja) * | 2017-03-21 | 2018-10-04 | パナソニックＩｐマネジメント株式会社 | 固体撮像素子及びその製造方法 |
| WO2018174090A1 (ja) * | 2017-03-22 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び信号処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12328960B2 (en) | 2025-06-10 |
| US20230063377A1 (en) | 2023-03-02 |
| CN114981970A (zh) | 2022-08-30 |
| JP7570037B2 (ja) | 2024-10-21 |
| WO2021149650A1 (ja) | 2021-07-29 |
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