JPWO2021149650A1 - - Google Patents

Info

Publication number
JPWO2021149650A1
JPWO2021149650A1 JP2021572728A JP2021572728A JPWO2021149650A1 JP WO2021149650 A1 JPWO2021149650 A1 JP WO2021149650A1 JP 2021572728 A JP2021572728 A JP 2021572728A JP 2021572728 A JP2021572728 A JP 2021572728A JP WO2021149650 A1 JPWO2021149650 A1 JP WO2021149650A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021572728A
Other versions
JPWO2021149650A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021149650A1 publication Critical patent/JPWO2021149650A1/ja
Publication of JPWO2021149650A5 publication Critical patent/JPWO2021149650A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
JP2021572728A 2020-01-21 2021-01-18 Pending JPWO2021149650A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020007247 2020-01-21
PCT/JP2021/001525 WO2021149650A1 (ja) 2020-01-21 2021-01-18 フォトセンサ及び距離測定システム

Publications (2)

Publication Number Publication Date
JPWO2021149650A1 true JPWO2021149650A1 (ja) 2021-07-29
JPWO2021149650A5 JPWO2021149650A5 (ja) 2022-10-12

Family

ID=76992435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021572728A Pending JPWO2021149650A1 (ja) 2020-01-21 2021-01-18

Country Status (4)

Country Link
US (1) US20230063377A1 (ja)
JP (1) JPWO2021149650A1 (ja)
CN (1) CN114981970A (ja)
WO (1) WO2021149650A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4971891B2 (ja) * 2007-07-03 2012-07-11 浜松ホトニクス株式会社 裏面入射型測距センサ及び測距装置
WO2011071483A1 (en) * 2009-12-07 2011-06-16 Array Optronix, Inc. Back-illuminated si photomultipliers: structure and fabrication methods
WO2017043068A1 (ja) * 2015-09-09 2017-03-16 パナソニックＩｐマネジメント株式会社 固体撮像素子
WO2018057975A1 (en) * 2016-09-23 2018-03-29 Apple Inc. Stacked backside illuminated spad array
JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP6846648B2 (ja) * 2017-03-21 2021-03-24 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
JP7237819B2 (ja) * 2017-03-22 2023-03-13 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び信号処理装置
JP7174932B2 (ja) * 2018-03-23 2022-11-18 パナソニックＩｐマネジメント株式会社 固体撮像素子

Also Published As

Publication number Publication date
WO2021149650A1 (ja) 2021-07-29
CN114981970A (zh) 2022-08-30
US20230063377A1 (en) 2023-03-02

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

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Effective date: 20220712

A621 Written request for application examination

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Effective date: 20230825