CN114981970A - 光电传感器及距离测定系统 - Google Patents

光电传感器及距离测定系统 Download PDF

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Publication number
CN114981970A
CN114981970A CN202180009299.5A CN202180009299A CN114981970A CN 114981970 A CN114981970 A CN 114981970A CN 202180009299 A CN202180009299 A CN 202180009299A CN 114981970 A CN114981970 A CN 114981970A
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CN
China
Prior art keywords
photosensor
semiconductor layer
main surface
contact
semiconductor substrate
Prior art date
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Pending
Application number
CN202180009299.5A
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English (en)
Chinese (zh)
Inventor
井上晓登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN114981970A publication Critical patent/CN114981970A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202180009299.5A 2020-01-21 2021-01-18 光电传感器及距离测定系统 Pending CN114981970A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020007247 2020-01-21
JP2020-007247 2020-01-21
PCT/JP2021/001525 WO2021149650A1 (ja) 2020-01-21 2021-01-18 フォトセンサ及び距離測定システム

Publications (1)

Publication Number Publication Date
CN114981970A true CN114981970A (zh) 2022-08-30

Family

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CN202180009299.5A Pending CN114981970A (zh) 2020-01-21 2021-01-18 光电传感器及距离测定系统

Country Status (4)

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US (1) US12328960B2 (https=)
JP (1) JP7570037B2 (https=)
CN (1) CN114981970A (https=)
WO (1) WO2021149650A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614855B2 (ja) * 2021-01-22 2025-01-16 キヤノン株式会社 光電変換装置、光検出システム
JP7653946B2 (ja) * 2022-03-15 2025-03-31 株式会社東芝 光検出器、光検出システム、ライダー装置及び移動体
JP2023178687A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム

Citations (9)

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CN103403869A (zh) * 2011-03-02 2013-11-20 索尼公司 固态成像装置、固态成像装置的制造方法和电子设备
CN105009291A (zh) * 2013-01-31 2015-10-28 苹果公司 垂直堆叠的图像传感器
CN105575982A (zh) * 2014-11-04 2016-05-11 株式会社理光 固体摄像元件
CN105870244A (zh) * 2011-10-21 2016-08-17 浜松光子学株式会社 光检测装置
US20170047367A1 (en) * 2015-08-10 2017-02-16 Samsung Electronics Co., Ltd. Image sensors with light channeling reflective layers therein
CN107615486A (zh) * 2015-03-26 2018-01-19 松下知识产权经营株式会社 固体摄像元件及具备该固体摄像元件的摄像装置
CN107665897A (zh) * 2016-07-29 2018-02-06 佳能株式会社 光检测设备和光检测系统
CN107949913A (zh) * 2015-09-09 2018-04-20 松下知识产权经营株式会社 固体摄像元件
CN110100312A (zh) * 2017-03-08 2019-08-06 索尼半导体解决方案公司 固态成像装置和电子设备

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JP4602287B2 (ja) 2006-06-14 2010-12-22 浜松ホトニクス株式会社 フォトダイオードアレイ
EP3002794B1 (en) 2006-07-03 2020-08-19 Hamamatsu Photonics K.K. Photodiode array
JP4971891B2 (ja) * 2007-07-03 2012-07-11 浜松ホトニクス株式会社 裏面入射型測距センサ及び測距装置
WO2011071483A1 (en) * 2009-12-07 2011-06-16 Array Optronix, Inc. Back-illuminated si photomultipliers: structure and fabrication methods
EP3087921A1 (en) 2015-04-27 2016-11-02 Coronary Technologies SARL Computer-implemented method for identifying zones of stasis and stenosis in blood vessels
CN111682039B (zh) * 2016-09-23 2021-08-03 苹果公司 堆叠式背面照明spad阵列
JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP6846648B2 (ja) * 2017-03-21 2021-03-24 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
US10777597B2 (en) 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
JP7174932B2 (ja) * 2018-03-23 2022-11-18 パナソニックＩｐマネジメント株式会社 固体撮像素子
JP7445397B2 (ja) * 2019-07-31 2024-03-07 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103403869A (zh) * 2011-03-02 2013-11-20 索尼公司 固态成像装置、固态成像装置的制造方法和电子设备
CN105870244A (zh) * 2011-10-21 2016-08-17 浜松光子学株式会社 光检测装置
CN105009291A (zh) * 2013-01-31 2015-10-28 苹果公司 垂直堆叠的图像传感器
CN105575982A (zh) * 2014-11-04 2016-05-11 株式会社理光 固体摄像元件
CN107615486A (zh) * 2015-03-26 2018-01-19 松下知识产权经营株式会社 固体摄像元件及具备该固体摄像元件的摄像装置
US20170047367A1 (en) * 2015-08-10 2017-02-16 Samsung Electronics Co., Ltd. Image sensors with light channeling reflective layers therein
CN107949913A (zh) * 2015-09-09 2018-04-20 松下知识产权经营株式会社 固体摄像元件
CN107665897A (zh) * 2016-07-29 2018-02-06 佳能株式会社 光检测设备和光检测系统
CN110100312A (zh) * 2017-03-08 2019-08-06 索尼半导体解决方案公司 固态成像装置和电子设备

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US12328960B2 (en) 2025-06-10
US20230063377A1 (en) 2023-03-02
JP7570037B2 (ja) 2024-10-21
WO2021149650A1 (ja) 2021-07-29
JPWO2021149650A1 (https=) 2021-07-29

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