JP7570037B2 - フォトセンサ及び距離測定システム - Google Patents

フォトセンサ及び距離測定システム Download PDF

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Publication number
JP7570037B2
JP7570037B2 JP2021572728A JP2021572728A JP7570037B2 JP 7570037 B2 JP7570037 B2 JP 7570037B2 JP 2021572728 A JP2021572728 A JP 2021572728A JP 2021572728 A JP2021572728 A JP 2021572728A JP 7570037 B2 JP7570037 B2 JP 7570037B2
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photosensor
semiconductor layer
main surface
semiconductor substrate
trench
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Japanese (ja)
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JPWO2021149650A1 (https=
JPWO2021149650A5 (https=
Inventor
暁登 井上
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2021572728A 2020-01-21 2021-01-18 フォトセンサ及び距離測定システム Active JP7570037B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020007247 2020-01-21
JP2020007247 2020-01-21
PCT/JP2021/001525 WO2021149650A1 (ja) 2020-01-21 2021-01-18 フォトセンサ及び距離測定システム

Publications (3)

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JPWO2021149650A1 JPWO2021149650A1 (https=) 2021-07-29
JPWO2021149650A5 JPWO2021149650A5 (https=) 2022-10-12
JP7570037B2 true JP7570037B2 (ja) 2024-10-21

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JP2021572728A Active JP7570037B2 (ja) 2020-01-21 2021-01-18 フォトセンサ及び距離測定システム

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US (1) US12328960B2 (https=)
JP (1) JP7570037B2 (https=)
CN (1) CN114981970A (https=)
WO (1) WO2021149650A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614855B2 (ja) * 2021-01-22 2025-01-16 キヤノン株式会社 光電変換装置、光検出システム
JP7653946B2 (ja) * 2022-03-15 2025-03-31 株式会社東芝 光検出器、光検出システム、ライダー装置及び移動体
JP2023178687A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009014460A (ja) 2007-07-03 2009-01-22 Hamamatsu Photonics Kk 裏面入射型測距センサ及び測距装置
WO2011071483A1 (en) 2009-12-07 2011-06-16 Array Optronix, Inc. Back-illuminated si photomultipliers: structure and fabrication methods
WO2017043068A1 (ja) 2015-09-09 2017-03-16 パナソニックＩｐマネジメント株式会社 固体撮像素子
WO2018174090A1 (ja) 2017-03-22 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び信号処理装置
JP2018157156A (ja) 2017-03-21 2018-10-04 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
JP2018201005A (ja) 2016-10-18 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 光検出器

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Publication number Priority date Publication date Assignee Title
JP4602287B2 (ja) 2006-06-14 2010-12-22 浜松ホトニクス株式会社 フォトダイオードアレイ
EP3002794B1 (en) 2006-07-03 2020-08-19 Hamamatsu Photonics K.K. Photodiode array
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
US8773562B1 (en) * 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
JP2016092178A (ja) * 2014-11-04 2016-05-23 株式会社リコー 固体撮像素子
CN107615486A (zh) * 2015-03-26 2018-01-19 松下知识产权经营株式会社 固体摄像元件及具备该固体摄像元件的摄像装置
EP3087921A1 (en) 2015-04-27 2016-11-02 Coronary Technologies SARL Computer-implemented method for identifying zones of stasis and stenosis in blood vessels
KR102497812B1 (ko) * 2015-08-10 2023-02-09 삼성전자주식회사 이미지 센서
US10497818B2 (en) * 2016-07-29 2019-12-03 Canon Kabushiki Kaisha Photodetection device and photodetection system
CN111682039B (zh) * 2016-09-23 2021-08-03 苹果公司 堆叠式背面照明spad阵列
JP6855287B2 (ja) * 2017-03-08 2021-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP7174932B2 (ja) * 2018-03-23 2022-11-18 パナソニックＩｐマネジメント株式会社 固体撮像素子
JP7445397B2 (ja) * 2019-07-31 2024-03-07 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009014460A (ja) 2007-07-03 2009-01-22 Hamamatsu Photonics Kk 裏面入射型測距センサ及び測距装置
WO2011071483A1 (en) 2009-12-07 2011-06-16 Array Optronix, Inc. Back-illuminated si photomultipliers: structure and fabrication methods
WO2017043068A1 (ja) 2015-09-09 2017-03-16 パナソニックＩｐマネジメント株式会社 固体撮像素子
JP2018201005A (ja) 2016-10-18 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP2018157156A (ja) 2017-03-21 2018-10-04 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
WO2018174090A1 (ja) 2017-03-22 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び信号処理装置

Also Published As

Publication number Publication date
US12328960B2 (en) 2025-06-10
US20230063377A1 (en) 2023-03-02
CN114981970A (zh) 2022-08-30
WO2021149650A1 (ja) 2021-07-29
JPWO2021149650A1 (https=) 2021-07-29

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