JPWO2021140618A5 - - Google Patents

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Publication number
JPWO2021140618A5
JPWO2021140618A5 JP2021569669A JP2021569669A JPWO2021140618A5 JP WO2021140618 A5 JPWO2021140618 A5 JP WO2021140618A5 JP 2021569669 A JP2021569669 A JP 2021569669A JP 2021569669 A JP2021569669 A JP 2021569669A JP WO2021140618 A5 JPWO2021140618 A5 JP WO2021140618A5
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JP
Japan
Prior art keywords
semiconductor laser
laser device
output characteristic
transverse mode
inspection
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JP2021569669A
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English (en)
Japanese (ja)
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JP7271726B2 (ja
JPWO2021140618A1 (https=
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Priority claimed from PCT/JP2020/000477 external-priority patent/WO2021140618A1/ja
Publication of JPWO2021140618A1 publication Critical patent/JPWO2021140618A1/ja
Publication of JPWO2021140618A5 publication Critical patent/JPWO2021140618A5/ja
Application granted granted Critical
Publication of JP7271726B2 publication Critical patent/JP7271726B2/ja
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JP2021569669A 2020-01-09 2020-01-09 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置 Active JP7271726B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/000477 WO2021140618A1 (ja) 2020-01-09 2020-01-09 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置

Publications (3)

Publication Number Publication Date
JPWO2021140618A1 JPWO2021140618A1 (https=) 2021-07-15
JPWO2021140618A5 true JPWO2021140618A5 (https=) 2022-06-10
JP7271726B2 JP7271726B2 (ja) 2023-05-11

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Family Applications (1)

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JP2021569669A Active JP7271726B2 (ja) 2020-01-09 2020-01-09 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置

Country Status (4)

Country Link
US (1) US20220376465A1 (https=)
JP (1) JP7271726B2 (https=)
CN (1) CN114902506B (https=)
WO (1) WO2021140618A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121208578B (zh) * 2025-11-28 2026-04-24 度亘核芯光电技术(苏州)股份有限公司 单模半导体激光器失效评估方法、装置及电子设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795976A (en) * 1987-01-15 1989-01-03 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus and derivative technique for testing devices
JPH04259279A (ja) * 1991-02-14 1992-09-14 Toshiba Corp 半導体レーザのキンク測定装置
JPH07307516A (ja) * 1994-05-13 1995-11-21 Kokusai Denshin Denwa Co Ltd <Kdd> 波長可変半導体レーザ装置
JP3323725B2 (ja) * 1995-12-08 2002-09-09 キヤノン株式会社 偏波変調レーザ、その駆動方法及びそれを用いた光通信システム
US6222202B1 (en) * 1998-10-06 2001-04-24 Agilent Technologies, Inc. System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation
US7120183B2 (en) * 2001-07-11 2006-10-10 Optium Corporation Electro-absorption modulated laser with high operating temperature tolerance
DE10201124A1 (de) * 2002-01-09 2003-07-24 Infineon Technologies Ag Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP2005142324A (ja) * 2003-11-06 2005-06-02 Sanyo Electric Co Ltd 半導体レーザー測定装置
JP2006294999A (ja) * 2005-04-13 2006-10-26 Sharp Corp 半導体レーザ素子の光学特性生成装置および光学特性生成方法
JP4034805B2 (ja) * 2006-02-01 2008-01-16 ダイトロンテクノロジー株式会社 半導体レーザ素子の入出力特性検出方法とその装置
JP5043880B2 (ja) * 2009-03-31 2012-10-10 日本オクラロ株式会社 半導体素子及びその製造方法
JP2011187580A (ja) * 2010-03-05 2011-09-22 Sony Corp 自励発振型半導体レーザ素子及びその駆動方法
JP2012033738A (ja) * 2010-07-30 2012-02-16 Ricoh Co Ltd 半導体レーザ駆動装置及びその半導体レーザ駆動装置を備えた画像形成装置
GB2486715A (en) * 2010-12-23 2012-06-27 Oclaro Technology Ltd Wavelength locker
JP2012141335A (ja) * 2010-12-28 2012-07-26 Mitsubishi Electric Corp 非冷却光半導体装置
JP2015026645A (ja) * 2013-07-24 2015-02-05 キヤノン株式会社 面発光レーザおよび光干渉断層計
JP6761391B2 (ja) * 2017-09-19 2020-09-23 日本電信電話株式会社 半導体光集積素子

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