JP7271726B2 - 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置 - Google Patents

半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置 Download PDF

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Publication number
JP7271726B2
JP7271726B2 JP2021569669A JP2021569669A JP7271726B2 JP 7271726 B2 JP7271726 B2 JP 7271726B2 JP 2021569669 A JP2021569669 A JP 2021569669A JP 2021569669 A JP2021569669 A JP 2021569669A JP 7271726 B2 JP7271726 B2 JP 7271726B2
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semiconductor laser
laser device
transverse mode
optical output
inspected
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JPWO2021140618A5 (https=
JPWO2021140618A1 (https=
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昭生 白崎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2021569669A 2020-01-09 2020-01-09 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置 Active JP7271726B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/000477 WO2021140618A1 (ja) 2020-01-09 2020-01-09 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置

Publications (3)

Publication Number Publication Date
JPWO2021140618A1 JPWO2021140618A1 (https=) 2021-07-15
JPWO2021140618A5 JPWO2021140618A5 (https=) 2022-06-10
JP7271726B2 true JP7271726B2 (ja) 2023-05-11

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JP2021569669A Active JP7271726B2 (ja) 2020-01-09 2020-01-09 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置

Country Status (4)

Country Link
US (1) US20220376465A1 (https=)
JP (1) JP7271726B2 (https=)
CN (1) CN114902506B (https=)
WO (1) WO2021140618A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121208578B (zh) * 2025-11-28 2026-04-24 度亘核芯光电技术(苏州)股份有限公司 单模半导体激光器失效评估方法、装置及电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795976A (en) 1987-01-15 1989-01-03 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus and derivative technique for testing devices
US20030137023A1 (en) 2002-01-09 2003-07-24 Bernhard Stegmuller Optoelectronic device, and method for producing an optoelectronic device
JP2005142324A (ja) 2003-11-06 2005-06-02 Sanyo Electric Co Ltd 半導体レーザー測定装置
JP2006294999A (ja) 2005-04-13 2006-10-26 Sharp Corp 半導体レーザ素子の光学特性生成装置および光学特性生成方法
JP2007207999A (ja) 2006-02-01 2007-08-16 Daitron Technology Co Ltd 半導体レーザ素子の入出力特性検出方法とその装置
WO2012085596A1 (en) 2010-12-23 2012-06-28 Oclaro Technology Ltd A laser-locker assembly

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04259279A (ja) * 1991-02-14 1992-09-14 Toshiba Corp 半導体レーザのキンク測定装置
JPH07307516A (ja) * 1994-05-13 1995-11-21 Kokusai Denshin Denwa Co Ltd <Kdd> 波長可変半導体レーザ装置
JP3323725B2 (ja) * 1995-12-08 2002-09-09 キヤノン株式会社 偏波変調レーザ、その駆動方法及びそれを用いた光通信システム
US6222202B1 (en) * 1998-10-06 2001-04-24 Agilent Technologies, Inc. System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation
US7120183B2 (en) * 2001-07-11 2006-10-10 Optium Corporation Electro-absorption modulated laser with high operating temperature tolerance
JP5043880B2 (ja) * 2009-03-31 2012-10-10 日本オクラロ株式会社 半導体素子及びその製造方法
JP2011187580A (ja) * 2010-03-05 2011-09-22 Sony Corp 自励発振型半導体レーザ素子及びその駆動方法
JP2012033738A (ja) * 2010-07-30 2012-02-16 Ricoh Co Ltd 半導体レーザ駆動装置及びその半導体レーザ駆動装置を備えた画像形成装置
JP2012141335A (ja) * 2010-12-28 2012-07-26 Mitsubishi Electric Corp 非冷却光半導体装置
JP2015026645A (ja) * 2013-07-24 2015-02-05 キヤノン株式会社 面発光レーザおよび光干渉断層計
JP6761391B2 (ja) * 2017-09-19 2020-09-23 日本電信電話株式会社 半導体光集積素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795976A (en) 1987-01-15 1989-01-03 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus and derivative technique for testing devices
US20030137023A1 (en) 2002-01-09 2003-07-24 Bernhard Stegmuller Optoelectronic device, and method for producing an optoelectronic device
JP2005142324A (ja) 2003-11-06 2005-06-02 Sanyo Electric Co Ltd 半導体レーザー測定装置
JP2006294999A (ja) 2005-04-13 2006-10-26 Sharp Corp 半導体レーザ素子の光学特性生成装置および光学特性生成方法
JP2007207999A (ja) 2006-02-01 2007-08-16 Daitron Technology Co Ltd 半導体レーザ素子の入出力特性検出方法とその装置
WO2012085596A1 (en) 2010-12-23 2012-06-28 Oclaro Technology Ltd A laser-locker assembly

Also Published As

Publication number Publication date
CN114902506B (zh) 2025-02-25
WO2021140618A1 (ja) 2021-07-15
CN114902506A (zh) 2022-08-12
US20220376465A1 (en) 2022-11-24
JPWO2021140618A1 (https=) 2021-07-15

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