JPWO2021140407A5 - - Google Patents
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- Publication number
- JPWO2021140407A5 JPWO2021140407A5 JP2021569603A JP2021569603A JPWO2021140407A5 JP WO2021140407 A5 JPWO2021140407 A5 JP WO2021140407A5 JP 2021569603 A JP2021569603 A JP 2021569603A JP 2021569603 A JP2021569603 A JP 2021569603A JP WO2021140407 A5 JPWO2021140407 A5 JP WO2021140407A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- oxide
- region
- conductor
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 30
- 239000004020 conductor Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025025809A JP2025071240A (ja) | 2020-01-10 | 2025-02-20 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020002997 | 2020-01-10 | ||
| JP2020002997 | 2020-01-10 | ||
| PCT/IB2020/062468 WO2021140407A1 (ja) | 2020-01-10 | 2020-12-28 | 半導体装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025025809A Division JP2025071240A (ja) | 2020-01-10 | 2025-02-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021140407A1 JPWO2021140407A1 (enExample) | 2021-07-15 |
| JPWO2021140407A5 true JPWO2021140407A5 (enExample) | 2023-12-27 |
| JP7640472B2 JP7640472B2 (ja) | 2025-03-05 |
Family
ID=76788512
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021569603A Active JP7640472B2 (ja) | 2020-01-10 | 2020-12-28 | 半導体装置、および半導体装置の作製方法 |
| JP2025025809A Pending JP2025071240A (ja) | 2020-01-10 | 2025-02-20 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025025809A Pending JP2025071240A (ja) | 2020-01-10 | 2025-02-20 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230027402A1 (enExample) |
| JP (2) | JP7640472B2 (enExample) |
| KR (1) | KR20220124700A (enExample) |
| CN (1) | CN114930547A (enExample) |
| WO (1) | WO2021140407A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11929436B2 (en) | 2021-02-02 | 2024-03-12 | Taiwan Semiconductor Manufacturing Company Limited | Thin transistor including a hydrogen-blocking dielectric barrier and methods for forming the same |
| US11856751B2 (en) * | 2021-03-12 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company Limited | Drain sharing for memory cell thin film access transistors and methods for forming the same |
| US12218252B2 (en) * | 2021-08-30 | 2025-02-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure with source and drain electrode embedded within semiconductor layer and manufacturing method thereof |
| US12133396B2 (en) * | 2021-08-30 | 2024-10-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device, integrated circuit and method of manufacturing the same |
| KR20250093510A (ko) * | 2022-10-21 | 2025-06-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 기억 장치 |
| CN119159015B (zh) * | 2024-11-20 | 2025-06-27 | 江苏爱矽半导体科技有限公司 | 一种半导体封装机 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09139508A (ja) * | 1995-11-10 | 1997-05-27 | Toyota Motor Corp | 薄膜トランジスタの製造方法 |
| US7419858B2 (en) * | 2006-08-31 | 2008-09-02 | Sharp Laboratories Of America, Inc. | Recessed-gate thin-film transistor with self-aligned lightly doped drain |
| CN102804360B (zh) | 2009-12-25 | 2014-12-17 | 株式会社半导体能源研究所 | 半导体装置 |
| DE112011102644B4 (de) | 2010-08-06 | 2019-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Integrierte Halbleiterschaltung |
| JP6250883B2 (ja) | 2013-03-01 | 2017-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI664731B (zh) * | 2013-05-20 | 2019-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9647125B2 (en) | 2013-05-20 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9343579B2 (en) * | 2013-05-20 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9954003B2 (en) * | 2016-02-17 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP7267989B2 (ja) | 2018-02-28 | 2023-05-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2020
- 2020-12-28 KR KR1020227022508A patent/KR20220124700A/ko active Pending
- 2020-12-28 WO PCT/IB2020/062468 patent/WO2021140407A1/ja not_active Ceased
- 2020-12-28 JP JP2021569603A patent/JP7640472B2/ja active Active
- 2020-12-28 CN CN202080092368.9A patent/CN114930547A/zh active Pending
- 2020-12-28 US US17/787,982 patent/US20230027402A1/en active Pending
-
2025
- 2025-02-20 JP JP2025025809A patent/JP2025071240A/ja active Pending
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