JPWO2021124450A5 - - Google Patents

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Publication number
JPWO2021124450A5
JPWO2021124450A5 JP2021565208A JP2021565208A JPWO2021124450A5 JP WO2021124450 A5 JPWO2021124450 A5 JP WO2021124450A5 JP 2021565208 A JP2021565208 A JP 2021565208A JP 2021565208 A JP2021565208 A JP 2021565208A JP WO2021124450 A5 JPWO2021124450 A5 JP WO2021124450A5
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JP
Japan
Prior art keywords
field effect
channel field
gate
effect transistor
bias voltage
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Application number
JP2021565208A
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English (en)
Japanese (ja)
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JPWO2021124450A1 (https=
JP7453562B2 (ja
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Priority claimed from PCT/JP2019/049423 external-priority patent/WO2021124450A1/ja
Publication of JPWO2021124450A1 publication Critical patent/JPWO2021124450A1/ja
Publication of JPWO2021124450A5 publication Critical patent/JPWO2021124450A5/ja
Application granted granted Critical
Publication of JP7453562B2 publication Critical patent/JP7453562B2/ja
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JP2021565208A 2019-12-17 2019-12-17 差動増幅回路、受信回路及び半導体集積回路 Active JP7453562B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/049423 WO2021124450A1 (ja) 2019-12-17 2019-12-17 差動増幅回路、受信回路及び半導体集積回路

Publications (3)

Publication Number Publication Date
JPWO2021124450A1 JPWO2021124450A1 (https=) 2021-06-24
JPWO2021124450A5 true JPWO2021124450A5 (https=) 2022-08-12
JP7453562B2 JP7453562B2 (ja) 2024-03-21

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ID=76477285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021565208A Active JP7453562B2 (ja) 2019-12-17 2019-12-17 差動増幅回路、受信回路及び半導体集積回路

Country Status (4)

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US (1) US12113494B2 (https=)
JP (1) JP7453562B2 (https=)
CN (1) CN114788174B (https=)
WO (1) WO2021124450A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7567909B2 (ja) * 2020-06-11 2024-10-16 株式会社ソシオネクスト 増幅回路、差動増幅回路、受信回路及び半導体集積回路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682419B2 (ja) 2000-12-22 2011-05-11 日本テキサス・インスツルメンツ株式会社 可変利得増幅回路
US6529077B1 (en) * 2001-08-22 2003-03-04 Institute Of Microelectronics Gain compensation circuit for CMOS amplifiers
US7116088B2 (en) * 2003-06-09 2006-10-03 Silicon Storage Technology, Inc. High voltage shunt regulator for flash memory
JP2005151460A (ja) * 2003-11-19 2005-06-09 Toyota Industries Corp Ａｍ中間周波可変利得増幅回路、可変利得増幅回路及びその半導体集積回路
US7394310B2 (en) * 2004-08-31 2008-07-01 Broadcom Corporation System and method for programmable switching characteristics of an analog switch in a transconductance amplifier
US7710197B2 (en) 2007-07-11 2010-05-04 Axiom Microdevices, Inc. Low offset envelope detector and method of use
US7911244B2 (en) * 2007-11-30 2011-03-22 Sony Corporation Differential drive circuit and communication device
JP2010034733A (ja) * 2008-07-28 2010-02-12 Kawasaki Microelectronics Inc スケルチ検出回路
JP2010141589A (ja) * 2008-12-11 2010-06-24 Elpida Memory Inc 差動増幅回路
US7728630B1 (en) * 2009-01-29 2010-06-01 Xilinx, Inc. Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device
KR20110003743A (ko) 2009-07-06 2011-01-13 삼성전자주식회사 고속 선형 차동 증폭기
US8823450B2 (en) * 2012-07-19 2014-09-02 Honeywell International Inc. Multiple-output transconductance amplifier based instrumentation amplifier
GB2533309A (en) * 2014-12-15 2016-06-22 Nordic Semiconductor Asa Differential amplifiers
CN108028628A (zh) 2015-07-29 2018-05-11 Macom连接解决有限公司 具有受控增益阶的可编程增益放大器
US20230308065A1 (en) * 2022-03-24 2023-09-28 Kandou Labs SA Variable gain amplifier biased with a fixed current to improve low-gain linearity

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