CN114788174B - 差动放大电路、接收电路以及半导体集成电路 - Google Patents

差动放大电路、接收电路以及半导体集成电路 Download PDF

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Publication number
CN114788174B
CN114788174B CN201980102950.6A CN201980102950A CN114788174B CN 114788174 B CN114788174 B CN 114788174B CN 201980102950 A CN201980102950 A CN 201980102950A CN 114788174 B CN114788174 B CN 114788174B
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CN
China
Prior art keywords
transistor
replica
drain
circuit
gate
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Application number
CN201980102950.6A
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English (en)
Chinese (zh)
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CN114788174A (zh
Inventor
藤村拓弥
加纳英树
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Socionext Inc
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Socionext Inc
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Publication of CN114788174A publication Critical patent/CN114788174A/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H03F3/45201—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0264—Arrangements for coupling to transmission lines
    • H04L25/0272—Arrangements for coupling to multiple lines, e.g. for differential transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
    • H04L25/03006—Arrangements for removing intersymbol interference
    • H04L25/03012—Arrangements for removing intersymbol interference operating in the time domain
    • H04L25/03114—Arrangements for removing intersymbol interference operating in the time domain non-adaptive, i.e. not adjustable, manually adjustable, or adjustable only during the reception of special signals
    • H04L25/03146—Arrangements for removing intersymbol interference operating in the time domain non-adaptive, i.e. not adjustable, manually adjustable, or adjustable only during the reception of special signals with a recursive structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45374—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
CN201980102950.6A 2019-12-17 2019-12-17 差动放大电路、接收电路以及半导体集成电路 Active CN114788174B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/049423 WO2021124450A1 (ja) 2019-12-17 2019-12-17 差動増幅回路、受信回路及び半導体集積回路

Publications (2)

Publication Number Publication Date
CN114788174A CN114788174A (zh) 2022-07-22
CN114788174B true CN114788174B (zh) 2025-04-22

Family

ID=76477285

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980102950.6A Active CN114788174B (zh) 2019-12-17 2019-12-17 差动放大电路、接收电路以及半导体集成电路

Country Status (4)

Country Link
US (1) US12113494B2 (https=)
JP (1) JP7453562B2 (https=)
CN (1) CN114788174B (https=)
WO (1) WO2021124450A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7567909B2 (ja) * 2020-06-11 2024-10-16 株式会社ソシオネクスト 増幅回路、差動増幅回路、受信回路及び半導体集積回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1883112A (zh) * 2003-11-19 2006-12-20 株式会社丰田自动织机 Am中频可变增益放大电路、可变增益放大电路及其半导体集成电路
JP2010141589A (ja) * 2008-12-11 2010-06-24 Elpida Memory Inc 差動増幅回路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682419B2 (ja) 2000-12-22 2011-05-11 日本テキサス・インスツルメンツ株式会社 可変利得増幅回路
US6529077B1 (en) * 2001-08-22 2003-03-04 Institute Of Microelectronics Gain compensation circuit for CMOS amplifiers
US7116088B2 (en) * 2003-06-09 2006-10-03 Silicon Storage Technology, Inc. High voltage shunt regulator for flash memory
US7394310B2 (en) * 2004-08-31 2008-07-01 Broadcom Corporation System and method for programmable switching characteristics of an analog switch in a transconductance amplifier
US7710197B2 (en) 2007-07-11 2010-05-04 Axiom Microdevices, Inc. Low offset envelope detector and method of use
US7911244B2 (en) * 2007-11-30 2011-03-22 Sony Corporation Differential drive circuit and communication device
JP2010034733A (ja) * 2008-07-28 2010-02-12 Kawasaki Microelectronics Inc スケルチ検出回路
US7728630B1 (en) * 2009-01-29 2010-06-01 Xilinx, Inc. Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device
KR20110003743A (ko) 2009-07-06 2011-01-13 삼성전자주식회사 고속 선형 차동 증폭기
US8823450B2 (en) * 2012-07-19 2014-09-02 Honeywell International Inc. Multiple-output transconductance amplifier based instrumentation amplifier
GB2533309A (en) * 2014-12-15 2016-06-22 Nordic Semiconductor Asa Differential amplifiers
CN108028628A (zh) 2015-07-29 2018-05-11 Macom连接解决有限公司 具有受控增益阶的可编程增益放大器
US20230308065A1 (en) * 2022-03-24 2023-09-28 Kandou Labs SA Variable gain amplifier biased with a fixed current to improve low-gain linearity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1883112A (zh) * 2003-11-19 2006-12-20 株式会社丰田自动织机 Am中频可变增益放大电路、可变增益放大电路及其半导体集成电路
JP2010141589A (ja) * 2008-12-11 2010-06-24 Elpida Memory Inc 差動増幅回路

Also Published As

Publication number Publication date
US12113494B2 (en) 2024-10-08
CN114788174A (zh) 2022-07-22
JPWO2021124450A1 (https=) 2021-06-24
WO2021124450A1 (ja) 2021-06-24
US20220302889A1 (en) 2022-09-22
JP7453562B2 (ja) 2024-03-21

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