JPWO2021070919A5 - - Google Patents

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Publication number
JPWO2021070919A5
JPWO2021070919A5 JP2021551710A JP2021551710A JPWO2021070919A5 JP WO2021070919 A5 JPWO2021070919 A5 JP WO2021070919A5 JP 2021551710 A JP2021551710 A JP 2021551710A JP 2021551710 A JP2021551710 A JP 2021551710A JP WO2021070919 A5 JPWO2021070919 A5 JP WO2021070919A5
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JP
Japan
Prior art keywords
underlayer film
resist underlayer
measured
silicon wafer
extinction coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021551710A
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English (en)
Japanese (ja)
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JP7852249B2 (ja
JPWO2021070919A1 (https=
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Priority claimed from PCT/JP2020/038222 external-priority patent/WO2021070919A1/ja
Publication of JPWO2021070919A1 publication Critical patent/JPWO2021070919A1/ja
Publication of JPWO2021070919A5 publication Critical patent/JPWO2021070919A5/ja
Priority to JP2026004220A priority Critical patent/JP2026063133A/ja
Application granted granted Critical
Publication of JP7852249B2 publication Critical patent/JP7852249B2/ja
Active legal-status Critical Current
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JP2021551710A 2019-10-10 2020-10-09 複素環化合物を含むレジスト下層膜形成組成物 Active JP7852249B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2026004220A JP2026063133A (ja) 2019-10-10 2026-01-14 複素環化合物を含むレジスト下層膜形成組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019186784 2019-10-10
JP2019186784 2019-10-10
PCT/JP2020/038222 WO2021070919A1 (ja) 2019-10-10 2020-10-09 複素環化合物を含むレジスト下層膜形成組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026004220A Division JP2026063133A (ja) 2019-10-10 2026-01-14 複素環化合物を含むレジスト下層膜形成組成物

Publications (3)

Publication Number Publication Date
JPWO2021070919A1 JPWO2021070919A1 (https=) 2021-04-15
JPWO2021070919A5 true JPWO2021070919A5 (https=) 2023-08-24
JP7852249B2 JP7852249B2 (ja) 2026-04-28

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ID=75437247

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021551710A Active JP7852249B2 (ja) 2019-10-10 2020-10-09 複素環化合物を含むレジスト下層膜形成組成物
JP2026004220A Pending JP2026063133A (ja) 2019-10-10 2026-01-14 複素環化合物を含むレジスト下層膜形成組成物

Family Applications After (1)

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JP2026004220A Pending JP2026063133A (ja) 2019-10-10 2026-01-14 複素環化合物を含むレジスト下層膜形成組成物

Country Status (5)

Country Link
US (1) US20220356297A1 (https=)
JP (2) JP7852249B2 (https=)
KR (1) KR102820400B1 (https=)
CN (1) CN114424121B (https=)
WO (1) WO2021070919A1 (https=)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3368680B2 (ja) * 1994-09-12 2003-01-20 日産化学工業株式会社 新規エポキシ化合物及びその製造方法
JP2004034148A (ja) 2002-07-08 2004-02-05 Kurimoto Ltd 遠心力鋳造法による鉄系形状記憶合金製管継手の品質管理方法
US7816067B2 (en) * 2005-06-10 2010-10-19 Nissan Chemical Industries, Ltd. Coating-type underlayer coating forming composition for lithography containing naphthalene resin derivative
JP5337983B2 (ja) * 2007-09-19 2013-11-06 日産化学工業株式会社 多環式脂肪族環を有するポリマーを含むリソグラフィー用レジスト下層膜形成組成物
JP2009096340A (ja) 2007-10-17 2009-05-07 Toyota Motor Corp ハイブリッド車およびその制御方法
KR101808893B1 (ko) * 2011-04-28 2017-12-13 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물 및 패턴 형성 방법
US9195137B2 (en) * 2012-03-08 2015-11-24 Nissan Chemical Industries, Ltd. Composition for forming highly adhesive resist underlayer film
KR101866209B1 (ko) * 2012-05-07 2018-06-11 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성조성물
AU2013298680C1 (en) * 2012-07-30 2016-11-10 Akzo Nobel Coatings International B.V. High heat resistant composition
WO2015046149A1 (ja) * 2013-09-27 2015-04-02 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
KR20190028651A (ko) * 2016-07-15 2019-03-19 닛산 가가쿠 가부시키가이샤 히단토인환을 갖는 화합물을 포함하는 레지스트 하층막형성 조성물
KR20190056088A (ko) * 2017-11-16 2019-05-24 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
TWI840342B (zh) * 2018-02-02 2024-05-01 日商日產化學股份有限公司 具有二硫化物結構之阻劑下層膜形成組成物、阻劑下層膜、使用在半導體裝置的製造之阻劑圖型之形成方法、半導體裝置之製造方法,及經圖型化之基板之製造方法

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