JPWO2021053711A5 - - Google Patents

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JPWO2021053711A5
JPWO2021053711A5 JP2021546073A JP2021546073A JPWO2021053711A5 JP WO2021053711 A5 JPWO2021053711 A5 JP WO2021053711A5 JP 2021546073 A JP2021546073 A JP 2021546073A JP 2021546073 A JP2021546073 A JP 2021546073A JP WO2021053711 A5 JPWO2021053711 A5 JP WO2021053711A5
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JP
Japan
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photodetector
semiconductor laser
waveguide
layer
unit
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JP2021546073A
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English (en)
Japanese (ja)
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JPWO2021053711A1 (https=
JP7229377B2 (ja
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Priority claimed from PCT/JP2019/036336 external-priority patent/WO2021053711A1/ja
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Publication of JPWO2021053711A5 publication Critical patent/JPWO2021053711A5/ja
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Publication of JP7229377B2 publication Critical patent/JP7229377B2/ja
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JP2021546073A 2019-09-17 2019-09-17 半導体レーザ装置 Active JP7229377B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/036336 WO2021053711A1 (ja) 2019-09-17 2019-09-17 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JPWO2021053711A1 JPWO2021053711A1 (https=) 2021-03-25
JPWO2021053711A5 true JPWO2021053711A5 (https=) 2022-04-01
JP7229377B2 JP7229377B2 (ja) 2023-02-27

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JP2021546073A Active JP7229377B2 (ja) 2019-09-17 2019-09-17 半導体レーザ装置

Country Status (4)

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US (1) US12300966B2 (https=)
JP (1) JP7229377B2 (https=)
CN (1) CN114365359B (https=)
WO (1) WO2021053711A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
US12218268B2 (en) * 2021-02-25 2025-02-04 President And Fellows Of Harvard College Fast spatial light modulator based on atomically thin reflector
EP4352839A4 (en) 2021-06-10 2025-05-07 Freedom Photonics LLC DESIGNS FOR LATERAL CURRENT CONTROL IN OPTICAL AMPLIFIERS AND LASERS
US12255439B2 (en) * 2021-11-29 2025-03-18 Mellanox Technologies, Ltd. Light emitting silicon device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JPH06112595A (ja) * 1992-09-25 1994-04-22 Nec Corp 半導体光機能素子の製造方法
JP2685703B2 (ja) * 1993-01-12 1997-12-03 日本電信電話株式会社 半導体光検出器およびその製造方法
JPH09153636A (ja) * 1995-11-30 1997-06-10 Nippon Telegr & Teleph Corp <Ntt> 半導体受光素子
KR100276082B1 (ko) * 1998-04-01 2001-01-15 정선종 단일 전원으로 동작하는 양방향 광소자의구조 및 그 제조방법
JP2000036638A (ja) 1998-07-21 2000-02-02 Fujitsu Ltd 半導体発光装置
JP2000353818A (ja) * 1999-06-11 2000-12-19 Nec Corp 導波路型受光素子
KR100317130B1 (ko) * 1999-09-20 2001-12-22 오길록 광가입자망을 위한 양방향 송수신모듈과 그 제작방법
JP4030847B2 (ja) 2002-09-20 2008-01-09 ユーディナデバイス株式会社 半導体受光装置
KR100575964B1 (ko) * 2003-12-16 2006-05-02 삼성전자주식회사 광검출기가 모놀리식 집적된 전계 흡수형 광변조 모듈
US7230963B2 (en) * 2004-04-14 2007-06-12 The Trustees Of Princeton University Monolithic wavelength stabilized asymmetric laser
DE102004025610A1 (de) * 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
US7948006B2 (en) * 2009-06-01 2011-05-24 Jds Uniphase Corporation Photodiode with high ESD threshold
EP2439822A1 (en) * 2010-09-30 2012-04-11 Alcatel Lucent A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector
JP6256311B2 (ja) * 2014-11-17 2018-01-10 三菱電機株式会社 半導体光素子およびその製造方法
CN108604772A (zh) * 2016-02-04 2018-09-28 日本电信电话株式会社 光发送器以及光强度监测方法
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JP2018046258A (ja) * 2016-09-16 2018-03-22 国立大学法人 東京大学 光集積回路装置及びその製造方法
JP2019008179A (ja) 2017-06-26 2019-01-17 日本電信電話株式会社 半導体光素子
US11211768B2 (en) 2017-10-03 2021-12-28 Mitsubishi Electric Corporation Semiconductor optical integrated device
CN109346562A (zh) * 2018-08-30 2019-02-15 华灿光电（浙江）有限公司 一种发光二极管外延片的制备方法及发光二极管外延片

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