JPWO2021053450A5 - - Google Patents
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- Publication number
- JPWO2021053450A5 JPWO2021053450A5 JP2021546059A JP2021546059A JPWO2021053450A5 JP WO2021053450 A5 JPWO2021053450 A5 JP WO2021053450A5 JP 2021546059 A JP2021546059 A JP 2021546059A JP 2021546059 A JP2021546059 A JP 2021546059A JP WO2021053450 A5 JPWO2021053450 A5 JP WO2021053450A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide
- conductor
- insulator
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims 14
- 239000012212 insulator Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019171946 | 2019-09-20 | ||
| JP2019171946 | 2019-09-20 | ||
| PCT/IB2020/058299 WO2021053450A1 (ja) | 2019-09-20 | 2020-09-07 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021053450A1 JPWO2021053450A1 (https=) | 2021-03-25 |
| JPWO2021053450A5 true JPWO2021053450A5 (https=) | 2023-09-06 |
| JP7586825B2 JP7586825B2 (ja) | 2024-11-19 |
Family
ID=74883982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021546059A Active JP7586825B2 (ja) | 2019-09-20 | 2020-09-07 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12142693B2 (https=) |
| JP (1) | JP7586825B2 (https=) |
| WO (1) | WO2021053450A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202329333A (zh) * | 2021-11-30 | 2023-07-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置、半導體裝置的製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5484853B2 (ja) | 2008-10-10 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| JP6705810B2 (ja) | 2015-04-13 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US12464777B2 (en) | 2019-07-26 | 2025-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide |
-
2020
- 2020-09-07 WO PCT/IB2020/058299 patent/WO2021053450A1/ja not_active Ceased
- 2020-09-07 US US17/642,346 patent/US12142693B2/en active Active
- 2020-09-07 JP JP2021546059A patent/JP7586825B2/ja active Active
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