JP7586825B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7586825B2
JP7586825B2 JP2021546059A JP2021546059A JP7586825B2 JP 7586825 B2 JP7586825 B2 JP 7586825B2 JP 2021546059 A JP2021546059 A JP 2021546059A JP 2021546059 A JP2021546059 A JP 2021546059A JP 7586825 B2 JP7586825 B2 JP 7586825B2
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Japan
Prior art keywords
oxide
insulator
conductor
region
transistor
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JP2021546059A
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English (en)
Japanese (ja)
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JPWO2021053450A5 (https=
JPWO2021053450A1 (https=
Inventor
寛司 國武
悠一 柳澤
翔太 水上
一樹 津田
晴之 馬場
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2021053450A5 publication Critical patent/JPWO2021053450A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021546059A 2019-09-20 2020-09-07 半導体装置 Active JP7586825B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019171946 2019-09-20
JP2019171946 2019-09-20
PCT/IB2020/058299 WO2021053450A1 (ja) 2019-09-20 2020-09-07 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021053450A1 JPWO2021053450A1 (https=) 2021-03-25
JPWO2021053450A5 JPWO2021053450A5 (https=) 2023-09-06
JP7586825B2 true JP7586825B2 (ja) 2024-11-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546059A Active JP7586825B2 (ja) 2019-09-20 2020-09-07 半導体装置

Country Status (3)

Country Link
US (1) US12142693B2 (https=)
JP (1) JP7586825B2 (https=)
WO (1) WO2021053450A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202329333A (zh) * 2021-11-30 2023-07-16 日商半導體能源研究所股份有限公司 半導體裝置、半導體裝置的製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114432A (ja) 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2016166635A1 (ja) 2015-04-13 2016-10-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017045989A (ja) 2015-08-26 2017-03-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
CN114144894A (zh) 2019-07-26 2022-03-04 株式会社半导体能源研究所 半导体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114432A (ja) 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2016166635A1 (ja) 2015-04-13 2016-10-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017045989A (ja) 2015-08-26 2017-03-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

Also Published As

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US20220302312A1 (en) 2022-09-22
US12142693B2 (en) 2024-11-12
WO2021053450A1 (ja) 2021-03-25
JPWO2021053450A1 (https=) 2021-03-25

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