JPWO2020241820A5 - - Google Patents

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Publication number
JPWO2020241820A5
JPWO2020241820A5 JP2021522895A JP2021522895A JPWO2020241820A5 JP WO2020241820 A5 JPWO2020241820 A5 JP WO2020241820A5 JP 2021522895 A JP2021522895 A JP 2021522895A JP 2021522895 A JP2021522895 A JP 2021522895A JP WO2020241820 A5 JPWO2020241820 A5 JP WO2020241820A5
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JP
Japan
Prior art keywords
layer
outer peripheral
peripheral edge
low resistance
wiring electrode
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JP2021522895A
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English (en)
Japanese (ja)
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JP7268730B2 (ja
JPWO2020241820A1 (https=
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Priority claimed from PCT/JP2020/021307 external-priority patent/WO2020241820A1/ja
Publication of JPWO2020241820A1 publication Critical patent/JPWO2020241820A1/ja
Publication of JPWO2020241820A5 publication Critical patent/JPWO2020241820A5/ja
Application granted granted Critical
Publication of JP7268730B2 publication Critical patent/JP7268730B2/ja
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JP2021522895A 2019-05-30 2020-05-29 配線電極 Active JP7268730B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019100853 2019-05-30
JP2019100853 2019-05-30
PCT/JP2020/021307 WO2020241820A1 (ja) 2019-05-30 2020-05-29 配線電極

Publications (3)

Publication Number Publication Date
JPWO2020241820A1 JPWO2020241820A1 (https=) 2020-12-03
JPWO2020241820A5 true JPWO2020241820A5 (https=) 2022-01-18
JP7268730B2 JP7268730B2 (ja) 2023-05-08

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ID=73553184

Family Applications (1)

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JP2021522895A Active JP7268730B2 (ja) 2019-05-30 2020-05-29 配線電極

Country Status (5)

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US (1) US11985903B2 (https=)
JP (1) JP7268730B2 (https=)
KR (1) KR102711174B1 (https=)
CN (1) CN113906676B (https=)
WO (1) WO2020241820A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12308818B2 (en) 2023-01-03 2025-05-20 Win Semiconductors Corp. Surface acoustic wave device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0318031A (ja) 1989-06-14 1991-01-25 Fujitsu Ltd 半導体装置の製造方法
JPH07307549A (ja) * 1994-05-11 1995-11-21 Toshiba Corp 薄膜配線パターンの形成方法および薄膜配線基板の製造方法
AU2690400A (en) * 1999-02-24 2000-09-14 Hitachi Maxell, Ltd. Ic device and its production method, and information carrier mounted with ic device and its production method
JP2001305996A (ja) * 2000-02-18 2001-11-02 Seiko Epson Corp 表示装置用基板及びその製造方法、並びに液晶装置及び電子機器
AU2002361093A1 (en) * 2001-12-28 2003-07-24 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, electronic component using the device, and composite module
TWI232991B (en) * 2002-11-15 2005-05-21 Nec Lcd Technologies Ltd Method for manufacturing an LCD device
JP5561057B2 (ja) 2010-09-15 2014-07-30 株式会社村田製作所 電子部品及びその製造方法
WO2012176392A1 (ja) * 2011-06-24 2012-12-27 パナソニック株式会社 半導体装置及びその製造方法
JP6011108B2 (ja) * 2011-09-27 2016-10-19 日亜化学工業株式会社 半導体素子
US10536132B2 (en) 2014-11-18 2020-01-14 Kyocera Corporation Elastic wave element, filter element, and communication device
JP2017073630A (ja) * 2015-10-06 2017-04-13 株式会社村田製作所 弾性波装置の製造方法及び弾性波装置
JP6884062B2 (ja) * 2017-07-25 2021-06-09 京セラ株式会社 配線基板
JP2019060819A (ja) * 2017-09-28 2019-04-18 日本特殊陶業株式会社 電子部品検査装置用配線基板

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