JPWO2020173985A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2020173985A5
JPWO2020173985A5 JP2021550179A JP2021550179A JPWO2020173985A5 JP WO2020173985 A5 JPWO2020173985 A5 JP WO2020173985A5 JP 2021550179 A JP2021550179 A JP 2021550179A JP 2021550179 A JP2021550179 A JP 2021550179A JP WO2020173985 A5 JPWO2020173985 A5 JP WO2020173985A5
Authority
JP
Japan
Prior art keywords
layer
charge carrier
barrier
agent designed
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021550179A
Other languages
English (en)
Japanese (ja)
Other versions
JP7528109B2 (ja
JP2022522010A (ja
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2020/054995 external-priority patent/WO2020173985A1/en
Publication of JP2022522010A publication Critical patent/JP2022522010A/ja
Publication of JPWO2020173985A5 publication Critical patent/JPWO2020173985A5/ja
Application granted granted Critical
Publication of JP7528109B2 publication Critical patent/JP7528109B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021550179A 2019-02-27 2020-02-26 光検出のための光センサ及び検出器 Active JP7528109B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19159710.3 2019-02-27
EP19159710 2019-02-27
PCT/EP2020/054995 WO2020173985A1 (en) 2019-02-27 2020-02-26 Optical sensor and detector for an optical detection

Publications (3)

Publication Number Publication Date
JP2022522010A JP2022522010A (ja) 2022-04-13
JPWO2020173985A5 true JPWO2020173985A5 (enExample) 2023-02-22
JP7528109B2 JP7528109B2 (ja) 2024-08-05

Family

ID=65628668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021550179A Active JP7528109B2 (ja) 2019-02-27 2020-02-26 光検出のための光センサ及び検出器

Country Status (6)

Country Link
US (1) US11908956B2 (enExample)
EP (1) EP3931880A1 (enExample)
JP (1) JP7528109B2 (enExample)
KR (1) KR102714386B1 (enExample)
CN (1) CN113491016B (enExample)
WO (1) WO2020173985A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7048588B2 (ja) 2016-11-30 2022-04-05 ザ・リサーチ・ファウンデーション・フォー・ザ・ステイト・ユニヴァーシティ・オブ・ニューヨーク ハイブリッド・アクティブマトリクス・フラットパネル検出器システムおよび方法
CN112436062B (zh) * 2020-12-01 2022-12-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN116417535B (zh) * 2023-04-19 2024-11-15 云南师范大学 一种三端并联叠层双面光伏电池及其制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
JPS54154292A (en) * 1978-05-25 1979-12-05 Matsushita Electric Ind Co Ltd Photo detecting semiconductor device
JPS56133884A (en) 1980-03-24 1981-10-20 Hitachi Ltd Manufacture of photoelectric transducer
JPS6035830B2 (ja) 1981-01-26 1985-08-16 松下電子工業株式会社 固体撮像装置
JPS60241260A (ja) * 1984-05-16 1985-11-30 Toshiba Corp 固体撮像装置
JPH0394468A (ja) 1989-09-07 1991-04-19 Toshiba Corp 積層型固体撮像装置及びその製造方法
JPH03241260A (ja) 1990-02-16 1991-10-28 Matsushita Refrig Co Ltd 多室型空気調和機
JPH07169931A (ja) * 1993-12-16 1995-07-04 Hitachi Ltd 半導体装置及びその製造方法
JP2000101105A (ja) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd 光導電素子
JP2007165865A (ja) 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置
CN101313413B (zh) * 2005-11-18 2011-08-31 株式会社半导体能源研究所 光电转换装置
JP2008109110A (ja) 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
CN103492835B (zh) 2011-02-15 2016-08-17 巴斯夫欧洲公司 用于光学检测至少一种物体的检测器
JP6046377B2 (ja) 2011-08-09 2016-12-14 ローム株式会社 光検出素子、光検出装置およびオートライト装置
KR102088685B1 (ko) 2012-12-19 2020-03-13 바스프 에스이 적어도 하나의 물체를 광학적으로 검출하기 위한 검출기
JP2014241260A (ja) 2013-06-12 2014-12-25 日産自動車株式会社 燃料電池システム
FI20135967A7 (fi) 2013-09-27 2015-03-28 Lumichip Oy Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi
CN107438775B (zh) 2015-01-30 2022-01-21 特里纳米克斯股份有限公司 用于至少一个对象的光学检测的检测器
EP3286580A1 (en) * 2015-04-22 2018-02-28 trinamiX GmbH Detector for an optical detection of at least one object
JP2019523562A (ja) 2016-07-29 2019-08-22 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光学的検出のための光センサおよび検出器
WO2018077870A1 (en) * 2016-10-25 2018-05-03 Trinamix Gmbh Nfrared optical detector with integrated filter
JP7080059B2 (ja) 2018-01-11 2022-06-03 池上通信機株式会社 放送用モニタのムラ検出装置及び当該装置を用いたムラ補正システム
KR20250026412A (ko) 2019-01-18 2025-02-25 트리나미엑스 게엠베하 광학 센서 및 광학적 검출용 검출기

Similar Documents

Publication Publication Date Title
JP2009516929A5 (enExample)
JP2003017375A5 (enExample)
JP2004536722A5 (enExample)
JPS6432663A (en) Multilayer interconnection system for multi-chip high performance semiconductor package
JP2004503066A5 (enExample)
WO2020012237A1 (en) Methods and display devices for micro-led mass transfer processes
JP2007516611A5 (enExample)
JP2005536602A5 (enExample)
JP2007508416A5 (enExample)
JPWO2020173985A5 (enExample)
JP2003234486A5 (enExample)
JP2009073943A5 (enExample)
JP2005159333A5 (enExample)
JP2010157494A5 (enExample)
US10971472B2 (en) Method of liquid assisted bonding
WO2008146084A3 (en) Heat transfer for a hard-drive wire-bond pre-amp
JP2003501284A5 (ja) 面材を基材に接合する方法
JPWO2023032718A5 (enExample)
JP2008097829A5 (enExample)
WO2005008743A3 (en) A semiconductor device with metallic electrodes and a method for use in forming such a device
JP4127458B2 (ja) 半導体素子の固着方法
JPH09330791A (ja) 有機el素子の製造方法
CN220389487U (zh) 一种包裹有柔性绝缘外层的立体螺旋转印电极
CN109494194A (zh) 一种显示面板及其制备方法
US10916518B2 (en) Electrical binding structure and method of forming the same