JPWO2020171101A1 - 基板処理装置及び炉口閉塞ユニット及び半導体装置の製造方法 - Google Patents
基板処理装置及び炉口閉塞ユニット及び半導体装置の製造方法 Download PDFInfo
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- JPWO2020171101A1 JPWO2020171101A1 JP2021502064A JP2021502064A JPWO2020171101A1 JP WO2020171101 A1 JPWO2020171101 A1 JP WO2020171101A1 JP 2021502064 A JP2021502064 A JP 2021502064A JP 2021502064 A JP2021502064 A JP 2021502064A JP WO2020171101 A1 JPWO2020171101 A1 JP WO2020171101A1
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- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 22
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
Claims (10)
- 基板を処理する反応室と、前記反応室の炉口部を閉塞する蓋体と、前記蓋体の下方に取付けられるベースと、前記蓋体と前記ベースをそれぞれ連結する様に設けられる連結部材と、を具備する基板処理装置に於いて、前記連結部材は、前記蓋体に取付けられた軸部と、該軸部を囲う様に設けられ前記蓋体を保持する弾性部材と、該弾性部材を囲う様に設けられ前記ベースに取付けられるキャップと、該キャップの下方に取付けられる固定ブロックと、該固定ブロックと前記軸部の間に設けられる保持部材で保持された移動ブロックと、を有する様に構成された基板処理装置。
- 前記蓋体に対して垂直に設けた連結棒或はボート回転ユニットにキャップ受けを前記蓋体と平行に保持し、前記キャップ受け上に前記基板保持具を保持する請求項1に記載の基板処理装置。
- 前記連結部材は弾性部材を更に有し、前記弾性部材は前記蓋体を上方に付勢する請求項1に記載の基板処理装置。
- 前記移動ブロックによる保持部位に、リニアブッシュ、或はボールスプラインを設け、前記移動ブロックにより前記ベースと前記蓋体との位置決めを行う請求項1に記載の基板処理装置。
- 前記弾性部材はスプリングキャップで保持され、前記移動ブロックは前記保持部材で保持され、前記保持部材と前記移動ブロックとが固定ハウジングに保持され、該固定ハウジングが前記スプリングキャップに固定される請求項1に記載の基板処理装置。
- 前記保持部材はゴム又はOリングで構成されている請求項3〜請求項5のうちのいずれか1項に記載の基板処理装置。
- 前記弾性部材により、前記蓋体が反応室の下端に当接し、前記反応室の気密性が維持されると共に、前記保持部材が前記移動ブロックに過度の負荷を掛けずに前記基板保持具を前記反応室に対して平行に保持可能に構成された請求項3に記載の基板処理装置。
- 前記蓋体と前記ベースの熱膨張の差が前記保持部材により吸収され、前記移動ブロックに過度の負荷を掛けずに前記基板保持具を前記反応室から引出し可能に構成された請求項7に記載の基板処理装置。
- 基板を処理する反応室の炉口部を閉塞する蓋体と、前記蓋体の下方に取付けられるベースと、をそれぞれ連結する様に設けられる炉口閉塞ユニットであって、前記蓋体に取付けられた軸部と、該軸部を囲う様に設けられ前記蓋体を保持する弾性部材と、該弾性部材を囲う様に設けられ前記ベースに取付けられるキャップと、該キャップの下方に取付けられる固定ブロックと、該固定ブロックと前記軸部の間に設けられる保持部材で保持された移動ブロックと、を有する様に構成された炉口閉塞ユニット。
- 基板を処理する反応室の炉口部を閉塞する蓋体と、前記蓋体と該蓋体の下方に取付けられるベースをそれぞれ連結する様に設けられ、前記蓋体に取付けられた軸部と、該軸部を囲う様に設けられ前記蓋体を保持する弾性部材と、該弾性部材を囲う様に設けられ前記ベースに取付けられるキャップと、該キャップの下方に取付けられる固定ブロックと、該固定ブロックと前記軸部の間に設けられる保持部材で保持された移動ブロックと、を有する様に構成された連結部材により、前記反応室を閉塞に保持しつつ前記反応室に配置された前記基板を処理する工程を有する半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2019028224 | 2019-02-20 | ||
JP2019028224 | 2019-02-20 | ||
PCT/JP2020/006416 WO2020171101A1 (ja) | 2019-02-20 | 2020-02-19 | 基板処理装置及び炉口閉塞ユニット及び半導体装置の製造方法 |
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JPWO2020171101A1 true JPWO2020171101A1 (ja) | 2021-10-21 |
JP7165806B2 JP7165806B2 (ja) | 2022-11-04 |
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Country | Link |
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US (1) | US20210343562A1 (ja) |
JP (1) | JP7165806B2 (ja) |
KR (1) | KR102652784B1 (ja) |
CN (1) | CN113261080A (ja) |
SG (1) | SG11202107472WA (ja) |
WO (1) | WO2020171101A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04132216A (ja) * | 1990-09-21 | 1992-05-06 | Tokyo Electron Sagami Ltd | 熱処理装置 |
JPH09237782A (ja) * | 1996-02-29 | 1997-09-09 | Nippon Pillar Packing Co Ltd | 半導体ウエハーの加熱処理装置 |
JP2002009008A (ja) * | 2000-06-19 | 2002-01-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2008078428A (ja) * | 2006-09-22 | 2008-04-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS57190885A (en) * | 1981-05-20 | 1982-11-24 | Hitachi Ltd | Door opener with hinge automatic fixer |
JP3228508B2 (ja) | 1990-10-11 | 2001-11-12 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP3134137B2 (ja) | 1993-01-13 | 2001-02-13 | 東京エレクトロン株式会社 | 縦型処理装置 |
KR20010101564A (ko) * | 1999-01-15 | 2001-11-14 | 더글라스 제이. 맥큐천 | 작업물 취급 로봇 |
KR20030031252A (ko) * | 2001-10-12 | 2003-04-21 | 삼성전자주식회사 | 반도체 소자 제조용 수직형 튜브 로 장비 |
JP4342765B2 (ja) | 2002-04-18 | 2009-10-14 | 株式会社日立国際電気 | 基板処理装置 |
CN102024667B (zh) * | 2009-09-15 | 2012-12-12 | 财团法人工业技术研究院 | 进给驱动机构及其连接组件 |
CN101740451B (zh) * | 2009-12-23 | 2011-12-07 | 广东志成华科光电设备有限公司 | 芯片分拣设备的顶针机构 |
JP5606174B2 (ja) | 2010-01-27 | 2014-10-15 | 株式会社日立国際電気 | 基板処理装置、基板処理方法、半導体装置の製造方法および反応室の閉塞方法。 |
JP6098187B2 (ja) * | 2012-12-10 | 2017-03-22 | 日本精工株式会社 | 回転機構および搬送装置 |
JP6208588B2 (ja) * | 2014-01-28 | 2017-10-04 | 東京エレクトロン株式会社 | 支持機構及び基板処理装置 |
US10381258B2 (en) * | 2015-12-02 | 2019-08-13 | Tokyo Electron Limited | Apparatus of processing workpiece in depressurized space |
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2020
- 2020-02-19 WO PCT/JP2020/006416 patent/WO2020171101A1/ja active Application Filing
- 2020-02-19 KR KR1020217020927A patent/KR102652784B1/ko active IP Right Grant
- 2020-02-19 SG SG11202107472WA patent/SG11202107472WA/en unknown
- 2020-02-19 CN CN202080007665.9A patent/CN113261080A/zh active Pending
- 2020-02-19 JP JP2021502064A patent/JP7165806B2/ja active Active
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2021
- 2021-07-15 US US17/376,446 patent/US20210343562A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04132216A (ja) * | 1990-09-21 | 1992-05-06 | Tokyo Electron Sagami Ltd | 熱処理装置 |
JPH09237782A (ja) * | 1996-02-29 | 1997-09-09 | Nippon Pillar Packing Co Ltd | 半導体ウエハーの加熱処理装置 |
JP2002009008A (ja) * | 2000-06-19 | 2002-01-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2008078428A (ja) * | 2006-09-22 | 2008-04-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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Publication number | Publication date |
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US20210343562A1 (en) | 2021-11-04 |
JP7165806B2 (ja) | 2022-11-04 |
KR102652784B1 (ko) | 2024-03-28 |
CN113261080A (zh) | 2021-08-13 |
KR20210098518A (ko) | 2021-08-10 |
WO2020171101A1 (ja) | 2020-08-27 |
SG11202107472WA (en) | 2021-08-30 |
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