JPWO2020131839A5 - - Google Patents
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- JPWO2020131839A5 JPWO2020131839A5 JP2021533444A JP2021533444A JPWO2020131839A5 JP WO2020131839 A5 JPWO2020131839 A5 JP WO2020131839A5 JP 2021533444 A JP2021533444 A JP 2021533444A JP 2021533444 A JP2021533444 A JP 2021533444A JP WO2020131839 A5 JPWO2020131839 A5 JP WO2020131839A5
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- Prior art keywords
- angled
- ion source
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- platen
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- 150000002500 ions Chemical class 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 238000010884 ion-beam technique Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862780805P | 2018-12-17 | 2018-12-17 | |
| US201862780792P | 2018-12-17 | 2018-12-17 | |
| US62/780,805 | 2018-12-17 | ||
| US62/780,792 | 2018-12-17 | ||
| PCT/US2019/066789 WO2020131839A1 (en) | 2018-12-17 | 2019-12-17 | Method of optical device fabrication using an ion beam source |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022515348A JP2022515348A (ja) | 2022-02-18 |
| JPWO2020131839A5 true JPWO2020131839A5 (https=) | 2022-12-23 |
| JP2022515348A5 JP2022515348A5 (https=) | 2022-12-23 |
| JP7555340B2 JP7555340B2 (ja) | 2024-09-24 |
Family
ID=71071206
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021533791A Active JP7410951B2 (ja) | 2018-12-17 | 2019-12-17 | 電子ビーム装置を使用した光学装置の製造方法 |
| JP2021533442A Active JP7447118B2 (ja) | 2018-12-17 | 2019-12-17 | 光学装置製造のためのイオンビーム源 |
| JP2021533444A Active JP7555340B2 (ja) | 2018-12-17 | 2019-12-17 | イオンビーム源を使用した光学装置の製造方法 |
| JP2021533786A Active JP7447119B2 (ja) | 2018-12-17 | 2019-12-17 | 光学装置製造のための電子ビーム装置 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021533791A Active JP7410951B2 (ja) | 2018-12-17 | 2019-12-17 | 電子ビーム装置を使用した光学装置の製造方法 |
| JP2021533442A Active JP7447118B2 (ja) | 2018-12-17 | 2019-12-17 | 光学装置製造のためのイオンビーム源 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021533786A Active JP7447119B2 (ja) | 2018-12-17 | 2019-12-17 | 光学装置製造のための電子ビーム装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US11462386B2 (https=) |
| EP (4) | EP3899614A4 (https=) |
| JP (4) | JP7410951B2 (https=) |
| KR (4) | KR102841149B1 (https=) |
| CN (4) | CN113227859B (https=) |
| TW (5) | TWI730548B (https=) |
| WO (4) | WO2020131843A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102650642B1 (ko) * | 2018-06-28 | 2024-03-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 회절 격자들의 제조 |
| KR102628931B1 (ko) * | 2018-11-07 | 2024-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 경사 격자들의 형성 |
| US10991547B2 (en) * | 2019-09-25 | 2021-04-27 | Applied Materials, Inc. | Method and device for a carrier proximity mask |
| WO2022108986A1 (en) | 2020-11-17 | 2022-05-27 | Applied Materials, Inc. | An optical device having structural and refractive index gradation, and method of fabricating the same |
| US12027426B2 (en) | 2021-01-29 | 2024-07-02 | Applied Materials, Inc. | Image-based digital control of plasma processing |
| KR20240073158A (ko) * | 2021-10-15 | 2024-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 고성능 도파관 인커플러로서의 부분적으로 금속화된 격자 |
| WO2023122426A1 (en) * | 2021-12-22 | 2023-06-29 | Applied Materials, Inc. | Method for forming multi-depth optical devices |
| EP4578037A2 (en) * | 2022-08-26 | 2025-07-02 | Plazer IP, LLC | Improved plasma products and methods for producing same by using multiple simultaneous electrical discharges |
Family Cites Families (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4240448A (en) | 1978-08-21 | 1980-12-23 | Hauni-Werke Korber & Co. Kg | Apparatus for increasing the permeability of wrapping material for rod-shaped smokers' products |
| US5116461A (en) * | 1991-04-22 | 1992-05-26 | Motorola, Inc. | Method for fabricating an angled diffraction grating |
| JPH05314940A (ja) * | 1992-05-08 | 1993-11-26 | Hitachi Ltd | イオンビ−ム応用装置のイオン源 |
| JPH06201909A (ja) * | 1992-12-28 | 1994-07-22 | Canon Inc | 回折格子の製造方法 |
| US5375456A (en) | 1993-11-18 | 1994-12-27 | Trw Vehicle Safety Systems Inc. | Leak testing apparatus and method |
| JP3768547B2 (ja) | 1993-12-17 | 2006-04-19 | キヤノン株式会社 | 両面成膜方法 |
| US5981899A (en) * | 1997-01-17 | 1999-11-09 | Balzers Aktiengesellschaft | Capacitively coupled RF-plasma reactor |
| US6211628B1 (en) * | 1997-08-02 | 2001-04-03 | Corning Incorporated | System for controlling the position of an electron beam in a cathode ray tube and method thereof |
| KR19990047679A (ko) | 1997-12-05 | 1999-07-05 | 박호군 | 이온 빔을 이용한 재료의 표면 처리 장치 |
| JP4283432B2 (ja) | 2000-11-06 | 2009-06-24 | 株式会社日立製作所 | 試料作製装置 |
| US7546016B2 (en) * | 2001-06-28 | 2009-06-09 | E-Beam & Light, Inc. | Optical elements formed by inducing changes in the index of refraction by utilizing electron beam radiation |
| GB2386247B (en) * | 2002-01-11 | 2005-09-07 | Applied Materials Inc | Ion beam generator |
| DE10234614B3 (de) | 2002-07-24 | 2004-03-04 | Fractal Ag | Verfahren zur Bearbeitung von Trägermaterial durch Schwerionenbestrahlung und nachfolgenden Ätzprozess |
| JP2004363085A (ja) * | 2003-05-09 | 2004-12-24 | Ebara Corp | 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法 |
| KR20060003591A (ko) * | 2004-07-07 | 2006-01-11 | 주성엔지니어링(주) | 다수의 돌출부를 가지는 플라즈마 전극을 포함하는플라즈마 공정장치 |
| US7780821B2 (en) | 2004-08-02 | 2010-08-24 | Seagate Technology Llc | Multi-chamber processing with simultaneous workpiece transport and gas delivery |
| KR100851901B1 (ko) * | 2005-01-07 | 2008-08-13 | 삼성전자주식회사 | 이온 빔 추출장치 |
| KR100702010B1 (ko) | 2005-03-07 | 2007-03-30 | 삼성전자주식회사 | 반사체, 이를 채택하는 기판 처리 장치 및 이를 사용하는기판 처리 방법 |
| US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
| WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
| US8466953B2 (en) | 2006-06-02 | 2013-06-18 | Nokia Corporation | Stereoscopic exit pupil expander display |
| JP2008117753A (ja) | 2006-10-12 | 2008-05-22 | Tdk Corp | イオンガン、イオンビームエッチング装置、イオンビームエッチング設備、エッチング方法及び磁気記録媒体の製造方法 |
| JP5055011B2 (ja) | 2007-04-23 | 2012-10-24 | 株式会社日立ハイテクノロジーズ | イオン源 |
| US7723699B2 (en) * | 2007-06-26 | 2010-05-25 | Varian Semiconductor Equipment Associates, Inc. | Cathode having electron production and focusing grooves, ion source and related method |
| US20090084501A1 (en) * | 2007-09-27 | 2009-04-02 | Tokyo Electron Limited | Processing system for producing a negative ion plasma |
| US7915597B2 (en) * | 2008-03-18 | 2011-03-29 | Axcelis Technologies, Inc. | Extraction electrode system for high current ion implanter |
| US20090236214A1 (en) * | 2008-03-20 | 2009-09-24 | Karthik Janakiraman | Tunable ground planes in plasma chambers |
| WO2010023925A1 (ja) | 2008-09-01 | 2010-03-04 | 独立行政法人科学技術振興機構 | プラズマエッチング方法、プラズマエッチング装置及びフォトニック結晶製造方法 |
| JP5216918B2 (ja) | 2009-07-16 | 2013-06-19 | キヤノンアネルバ株式会社 | イオンビーム発生装置、基板処理装置及び電子デバイスの製造方法 |
| US20110065282A1 (en) | 2009-09-11 | 2011-03-17 | General Electric Company | Apparatus and methods to form a patterned coating on an oled substrate |
| US8173527B2 (en) | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
| US8129695B2 (en) * | 2009-12-28 | 2012-03-06 | Varian Semiconductor Equipment Associates, Inc. | System and method for controlling deflection of a charged particle beam within a graded electrostatic lens |
| CN102360093A (zh) | 2011-10-19 | 2012-02-22 | 苏州大学 | 一种全息闪耀光栅制作方法 |
| JP6368647B2 (ja) | 2011-12-21 | 2018-08-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板を処理するシステムおよび方法 |
| WO2013118517A1 (ja) | 2012-02-10 | 2013-08-15 | 国立大学法人東北大学 | 電子ビーム発生装置、電子ビーム照射装置、マルチ電子ビーム照射装置、電子ビーム露光装置、電子ビーム照射方法、および製造方法 |
| US8984451B2 (en) * | 2013-02-22 | 2015-03-17 | Aselta Nanographics | Free form fracturing method for electronic or optical lithography |
| US9288889B2 (en) | 2013-03-13 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for energetic neutral beam processing |
| US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| JP6348321B2 (ja) * | 2013-05-17 | 2018-06-27 | キヤノンアネルバ株式会社 | エッチング装置 |
| US9017526B2 (en) * | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
| TWI690968B (zh) * | 2014-03-07 | 2020-04-11 | 美商應用材料股份有限公司 | 用於修改基板表面的掠射角電漿處理 |
| US9287123B2 (en) * | 2014-04-28 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films |
| US9534289B2 (en) * | 2014-06-18 | 2017-01-03 | Applied Materials, Inc. | Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and related methods |
| US9343312B2 (en) * | 2014-07-25 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | High temperature intermittent ion implantation |
| US9304235B2 (en) * | 2014-07-30 | 2016-04-05 | Microsoft Technology Licensing, Llc | Microfabrication |
| US20160035539A1 (en) | 2014-07-30 | 2016-02-04 | Lauri SAINIEMI | Microfabrication |
| JP6403485B2 (ja) * | 2014-08-08 | 2018-10-10 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びイオン注入方法 |
| US9406535B2 (en) | 2014-08-29 | 2016-08-02 | Lam Research Corporation | Ion injector and lens system for ion beam milling |
| US10825652B2 (en) | 2014-08-29 | 2020-11-03 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
| US9659797B1 (en) * | 2014-09-17 | 2017-05-23 | Sandia Corporation | Wafer scale oblique angle plasma etching |
| US9536748B2 (en) * | 2014-10-21 | 2017-01-03 | Lam Research Corporation | Use of ion beam etching to generate gate-all-around structure |
| KR101943553B1 (ko) * | 2014-11-25 | 2019-04-18 | 삼성전자주식회사 | 좌우 대칭의 이온 빔을 이용한 패턴 형성 방법, 이를 이용한 자기 기억 소자의 제조방법, 및 좌우 대칭의 이온 빔을 발생시키는 이온 빔 장비 |
| JP6584787B2 (ja) * | 2015-02-13 | 2019-10-02 | 株式会社日立ハイテクノロジーズ | プラズマイオン源および荷電粒子ビーム装置 |
| US10475626B2 (en) * | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
| US9478399B2 (en) | 2015-03-27 | 2016-10-25 | Varian Semiconductor Equipment Associates, Inc. | Multi-aperture extraction system for angled ion beam |
| US9697988B2 (en) * | 2015-10-14 | 2017-07-04 | Advanced Ion Beam Technology, Inc. | Ion implantation system and process |
| US9812349B2 (en) | 2015-12-01 | 2017-11-07 | Lam Research Corporation | Control of the incidence angle of an ion beam on a substrate |
| KR102341688B1 (ko) * | 2016-01-26 | 2021-12-21 | 한국전자통신연구원 | 전계 방출 소자 및 이를 구비하는 엑스선 방출원 |
| US10249495B2 (en) * | 2016-06-28 | 2019-04-02 | Applied Materials, Inc. | Diamond like carbon layer formed by an electron beam plasma process |
| DE102016111998B4 (de) | 2016-06-30 | 2024-01-18 | Infineon Technologies Ag | Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen |
| US10141161B2 (en) | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
| JP6972121B2 (ja) | 2016-10-05 | 2021-11-24 | マジック リープ, インコーポレイテッドMagic Leap, Inc. | 不均一回折格子の加工 |
| JP6746224B2 (ja) * | 2016-11-18 | 2020-08-26 | 株式会社ディスコ | デバイスチップパッケージの製造方法 |
| KR102673632B1 (ko) * | 2016-12-06 | 2024-06-13 | 삼성전자주식회사 | 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법 |
| KR102768880B1 (ko) | 2017-01-11 | 2025-02-19 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
| US20180274100A1 (en) * | 2017-03-24 | 2018-09-27 | Applied Materials, Inc. | Alternating between deposition and treatment of diamond-like carbon |
| US10222202B2 (en) | 2017-05-25 | 2019-03-05 | Varian Semiconductor Equipment Associates, Inc. | Three dimensional structure fabrication control using novel processing system |
| US10409001B2 (en) | 2017-06-05 | 2019-09-10 | Applied Materials, Inc. | Waveguide fabrication with sacrificial sidewall spacers |
| KR102641752B1 (ko) * | 2018-11-21 | 2024-03-04 | 삼성전자주식회사 | 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법 |
| US20200321186A1 (en) * | 2019-04-02 | 2020-10-08 | Applied Materials, Inc. | Method and apparatus for angled etching |
-
2019
- 2019-12-17 TW TW108146250A patent/TWI730548B/zh active
- 2019-12-17 TW TW108146252A patent/TWI708082B/zh active
- 2019-12-17 EP EP19898594.7A patent/EP3899614A4/en active Pending
- 2019-12-17 TW TW108146266A patent/TWI755663B/zh active
- 2019-12-17 WO PCT/US2019/066797 patent/WO2020131843A1/en not_active Ceased
- 2019-12-17 US US16/716,965 patent/US11462386B2/en active Active
- 2019-12-17 JP JP2021533791A patent/JP7410951B2/ja active Active
- 2019-12-17 CN CN201980083890.8A patent/CN113227859B/zh active Active
- 2019-12-17 TW TW108146247A patent/TWI729629B/zh active
- 2019-12-17 WO PCT/US2019/066789 patent/WO2020131839A1/en not_active Ceased
- 2019-12-17 TW TW111101227A patent/TWI826899B/zh active
- 2019-12-17 KR KR1020217022389A patent/KR102841149B1/ko active Active
- 2019-12-17 JP JP2021533442A patent/JP7447118B2/ja active Active
- 2019-12-17 KR KR1020217022379A patent/KR20210094117A/ko active Pending
- 2019-12-17 WO PCT/US2019/066806 patent/WO2020131848A1/en not_active Ceased
- 2019-12-17 EP EP19900535.6A patent/EP3899617B1/en active Active
- 2019-12-17 CN CN201980083897.XA patent/CN113242989A/zh active Pending
- 2019-12-17 US US16/717,400 patent/US11640898B2/en active Active
- 2019-12-17 US US16/717,211 patent/US11810755B2/en active Active
- 2019-12-17 JP JP2021533444A patent/JP7555340B2/ja active Active
- 2019-12-17 CN CN201980083747.9A patent/CN113196442B/zh active Active
- 2019-12-17 KR KR1020217022376A patent/KR20210094116A/ko active Pending
- 2019-12-17 US US16/716,954 patent/US10818472B2/en active Active
- 2019-12-17 CN CN201980083749.8A patent/CN113196123B/zh active Active
- 2019-12-17 EP EP19900534.9A patent/EP3899615A4/en active Pending
- 2019-12-17 EP EP19901270.9A patent/EP3900008A4/en active Pending
- 2019-12-17 KR KR1020217022375A patent/KR102842144B1/ko active Active
- 2019-12-17 JP JP2021533786A patent/JP7447119B2/ja active Active
- 2019-12-17 WO PCT/US2019/066780 patent/WO2020131831A1/en not_active Ceased
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2020
- 2020-10-26 US US17/080,802 patent/US11430634B2/en active Active
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