JPWO2020131843A5 - - Google Patents

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JPWO2020131843A5
JPWO2020131843A5 JP2021533786A JP2021533786A JPWO2020131843A5 JP WO2020131843 A5 JPWO2020131843 A5 JP WO2020131843A5 JP 2021533786 A JP2021533786 A JP 2021533786A JP 2021533786 A JP2021533786 A JP 2021533786A JP WO2020131843 A5 JPWO2020131843 A5 JP WO2020131843A5
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liner
ion beam
apertures
substrate
chamber body
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JP2021533786A
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JP7447119B2 (ja
JP2022512490A (ja
JP2022512490A5 (https=
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JP2021533786A 2018-12-17 2019-12-17 光学装置製造のための電子ビーム装置 Active JP7447119B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862780805P 2018-12-17 2018-12-17
US201862780792P 2018-12-17 2018-12-17
US62/780,805 2018-12-17
US62/780,792 2018-12-17
PCT/US2019/066797 WO2020131843A1 (en) 2018-12-17 2019-12-17 Elecron beam apparatus for optical device fabrication

Publications (4)

Publication Number Publication Date
JP2022512490A JP2022512490A (ja) 2022-02-04
JP2022512490A5 JP2022512490A5 (https=) 2022-12-22
JPWO2020131843A5 true JPWO2020131843A5 (https=) 2022-12-22
JP7447119B2 JP7447119B2 (ja) 2024-03-11

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JP2021533791A Active JP7410951B2 (ja) 2018-12-17 2019-12-17 電子ビーム装置を使用した光学装置の製造方法
JP2021533442A Active JP7447118B2 (ja) 2018-12-17 2019-12-17 光学装置製造のためのイオンビーム源
JP2021533444A Active JP7555340B2 (ja) 2018-12-17 2019-12-17 イオンビーム源を使用した光学装置の製造方法
JP2021533786A Active JP7447119B2 (ja) 2018-12-17 2019-12-17 光学装置製造のための電子ビーム装置

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JP2021533791A Active JP7410951B2 (ja) 2018-12-17 2019-12-17 電子ビーム装置を使用した光学装置の製造方法
JP2021533442A Active JP7447118B2 (ja) 2018-12-17 2019-12-17 光学装置製造のためのイオンビーム源
JP2021533444A Active JP7555340B2 (ja) 2018-12-17 2019-12-17 イオンビーム源を使用した光学装置の製造方法

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US (5) US11462386B2 (https=)
EP (4) EP3899614A4 (https=)
JP (4) JP7410951B2 (https=)
KR (4) KR102841149B1 (https=)
CN (4) CN113227859B (https=)
TW (5) TWI730548B (https=)
WO (4) WO2020131843A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102650642B1 (ko) * 2018-06-28 2024-03-21 어플라이드 머티어리얼스, 인코포레이티드 회절 격자들의 제조
KR102628931B1 (ko) * 2018-11-07 2024-01-23 어플라이드 머티어리얼스, 인코포레이티드 경사 격자들의 형성
US10991547B2 (en) * 2019-09-25 2021-04-27 Applied Materials, Inc. Method and device for a carrier proximity mask
WO2022108986A1 (en) 2020-11-17 2022-05-27 Applied Materials, Inc. An optical device having structural and refractive index gradation, and method of fabricating the same
US12027426B2 (en) 2021-01-29 2024-07-02 Applied Materials, Inc. Image-based digital control of plasma processing
KR20240073158A (ko) * 2021-10-15 2024-05-24 어플라이드 머티어리얼스, 인코포레이티드 고성능 도파관 인커플러로서의 부분적으로 금속화된 격자
WO2023122426A1 (en) * 2021-12-22 2023-06-29 Applied Materials, Inc. Method for forming multi-depth optical devices
EP4578037A2 (en) * 2022-08-26 2025-07-02 Plazer IP, LLC Improved plasma products and methods for producing same by using multiple simultaneous electrical discharges

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240448A (en) 1978-08-21 1980-12-23 Hauni-Werke Korber & Co. Kg Apparatus for increasing the permeability of wrapping material for rod-shaped smokers' products
US5116461A (en) * 1991-04-22 1992-05-26 Motorola, Inc. Method for fabricating an angled diffraction grating
JPH05314940A (ja) * 1992-05-08 1993-11-26 Hitachi Ltd イオンビ−ム応用装置のイオン源
JPH06201909A (ja) * 1992-12-28 1994-07-22 Canon Inc 回折格子の製造方法
US5375456A (en) 1993-11-18 1994-12-27 Trw Vehicle Safety Systems Inc. Leak testing apparatus and method
JP3768547B2 (ja) 1993-12-17 2006-04-19 キヤノン株式会社 両面成膜方法
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
US6211628B1 (en) * 1997-08-02 2001-04-03 Corning Incorporated System for controlling the position of an electron beam in a cathode ray tube and method thereof
KR19990047679A (ko) 1997-12-05 1999-07-05 박호군 이온 빔을 이용한 재료의 표면 처리 장치
JP4283432B2 (ja) 2000-11-06 2009-06-24 株式会社日立製作所 試料作製装置
US7546016B2 (en) * 2001-06-28 2009-06-09 E-Beam & Light, Inc. Optical elements formed by inducing changes in the index of refraction by utilizing electron beam radiation
GB2386247B (en) * 2002-01-11 2005-09-07 Applied Materials Inc Ion beam generator
DE10234614B3 (de) 2002-07-24 2004-03-04 Fractal Ag Verfahren zur Bearbeitung von Trägermaterial durch Schwerionenbestrahlung und nachfolgenden Ätzprozess
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
KR20060003591A (ko) * 2004-07-07 2006-01-11 주성엔지니어링(주) 다수의 돌출부를 가지는 플라즈마 전극을 포함하는플라즈마 공정장치
US7780821B2 (en) 2004-08-02 2010-08-24 Seagate Technology Llc Multi-chamber processing with simultaneous workpiece transport and gas delivery
KR100851901B1 (ko) * 2005-01-07 2008-08-13 삼성전자주식회사 이온 빔 추출장치
KR100702010B1 (ko) 2005-03-07 2007-03-30 삼성전자주식회사 반사체, 이를 채택하는 기판 처리 장치 및 이를 사용하는기판 처리 방법
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
US8466953B2 (en) 2006-06-02 2013-06-18 Nokia Corporation Stereoscopic exit pupil expander display
JP2008117753A (ja) 2006-10-12 2008-05-22 Tdk Corp イオンガン、イオンビームエッチング装置、イオンビームエッチング設備、エッチング方法及び磁気記録媒体の製造方法
JP5055011B2 (ja) 2007-04-23 2012-10-24 株式会社日立ハイテクノロジーズ イオン源
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method
US20090084501A1 (en) * 2007-09-27 2009-04-02 Tokyo Electron Limited Processing system for producing a negative ion plasma
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
WO2010023925A1 (ja) 2008-09-01 2010-03-04 独立行政法人科学技術振興機構 プラズマエッチング方法、プラズマエッチング装置及びフォトニック結晶製造方法
JP5216918B2 (ja) 2009-07-16 2013-06-19 キヤノンアネルバ株式会社 イオンビーム発生装置、基板処理装置及び電子デバイスの製造方法
US20110065282A1 (en) 2009-09-11 2011-03-17 General Electric Company Apparatus and methods to form a patterned coating on an oled substrate
US8173527B2 (en) 2009-10-19 2012-05-08 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation
US8129695B2 (en) * 2009-12-28 2012-03-06 Varian Semiconductor Equipment Associates, Inc. System and method for controlling deflection of a charged particle beam within a graded electrostatic lens
CN102360093A (zh) 2011-10-19 2012-02-22 苏州大学 一种全息闪耀光栅制作方法
JP6368647B2 (ja) 2011-12-21 2018-08-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板を処理するシステムおよび方法
WO2013118517A1 (ja) 2012-02-10 2013-08-15 国立大学法人東北大学 電子ビーム発生装置、電子ビーム照射装置、マルチ電子ビーム照射装置、電子ビーム露光装置、電子ビーム照射方法、および製造方法
US8984451B2 (en) * 2013-02-22 2015-03-17 Aselta Nanographics Free form fracturing method for electronic or optical lithography
US9288889B2 (en) 2013-03-13 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for energetic neutral beam processing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
JP6348321B2 (ja) * 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 エッチング装置
US9017526B2 (en) * 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
TWI690968B (zh) * 2014-03-07 2020-04-11 美商應用材料股份有限公司 用於修改基板表面的掠射角電漿處理
US9287123B2 (en) * 2014-04-28 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films
US9534289B2 (en) * 2014-06-18 2017-01-03 Applied Materials, Inc. Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and related methods
US9343312B2 (en) * 2014-07-25 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. High temperature intermittent ion implantation
US9304235B2 (en) * 2014-07-30 2016-04-05 Microsoft Technology Licensing, Llc Microfabrication
US20160035539A1 (en) 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication
JP6403485B2 (ja) * 2014-08-08 2018-10-10 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9659797B1 (en) * 2014-09-17 2017-05-23 Sandia Corporation Wafer scale oblique angle plasma etching
US9536748B2 (en) * 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
KR101943553B1 (ko) * 2014-11-25 2019-04-18 삼성전자주식회사 좌우 대칭의 이온 빔을 이용한 패턴 형성 방법, 이를 이용한 자기 기억 소자의 제조방법, 및 좌우 대칭의 이온 빔을 발생시키는 이온 빔 장비
JP6584787B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
US9478399B2 (en) 2015-03-27 2016-10-25 Varian Semiconductor Equipment Associates, Inc. Multi-aperture extraction system for angled ion beam
US9697988B2 (en) * 2015-10-14 2017-07-04 Advanced Ion Beam Technology, Inc. Ion implantation system and process
US9812349B2 (en) 2015-12-01 2017-11-07 Lam Research Corporation Control of the incidence angle of an ion beam on a substrate
KR102341688B1 (ko) * 2016-01-26 2021-12-21 한국전자통신연구원 전계 방출 소자 및 이를 구비하는 엑스선 방출원
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
DE102016111998B4 (de) 2016-06-30 2024-01-18 Infineon Technologies Ag Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
JP6972121B2 (ja) 2016-10-05 2021-11-24 マジック リープ, インコーポレイテッドMagic Leap, Inc. 不均一回折格子の加工
JP6746224B2 (ja) * 2016-11-18 2020-08-26 株式会社ディスコ デバイスチップパッケージの製造方法
KR102673632B1 (ko) * 2016-12-06 2024-06-13 삼성전자주식회사 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법
KR102768880B1 (ko) 2017-01-11 2025-02-19 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US20180274100A1 (en) * 2017-03-24 2018-09-27 Applied Materials, Inc. Alternating between deposition and treatment of diamond-like carbon
US10222202B2 (en) 2017-05-25 2019-03-05 Varian Semiconductor Equipment Associates, Inc. Three dimensional structure fabrication control using novel processing system
US10409001B2 (en) 2017-06-05 2019-09-10 Applied Materials, Inc. Waveguide fabrication with sacrificial sidewall spacers
KR102641752B1 (ko) * 2018-11-21 2024-03-04 삼성전자주식회사 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
US20200321186A1 (en) * 2019-04-02 2020-10-08 Applied Materials, Inc. Method and apparatus for angled etching

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