JPWO2020055571A5 - - Google Patents

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Publication number
JPWO2020055571A5
JPWO2020055571A5 JP2021513335A JP2021513335A JPWO2020055571A5 JP WO2020055571 A5 JPWO2020055571 A5 JP WO2020055571A5 JP 2021513335 A JP2021513335 A JP 2021513335A JP 2021513335 A JP2021513335 A JP 2021513335A JP WO2020055571 A5 JPWO2020055571 A5 JP WO2020055571A5
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JP
Japan
Prior art keywords
polishing
semiconductor substrate
pad
slurry
polishing pad
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JP2021513335A
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English (en)
Japanese (ja)
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JP7341223B2 (ja
JP2021536140A (ja
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Priority claimed from PCT/US2019/047829 external-priority patent/WO2020055571A1/en
Publication of JP2021536140A publication Critical patent/JP2021536140A/ja
Publication of JPWO2020055571A5 publication Critical patent/JPWO2020055571A5/ja
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Publication of JP7341223B2 publication Critical patent/JP7341223B2/ja
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JP2021513335A 2018-09-10 2019-08-23 パッド-パッド変動のために調整を行う半導体基板の研磨方法 Active JP7341223B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862729134P 2018-09-10 2018-09-10
US62/729,134 2018-09-10
PCT/US2019/047829 WO2020055571A1 (en) 2018-09-10 2019-08-23 Methods for polishing semiconductor substrates that adjust for pad-to-pad variance

Publications (3)

Publication Number Publication Date
JP2021536140A JP2021536140A (ja) 2021-12-23
JPWO2020055571A5 true JPWO2020055571A5 (zh) 2022-11-24
JP7341223B2 JP7341223B2 (ja) 2023-09-08

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JP2021513335A Active JP7341223B2 (ja) 2018-09-10 2019-08-23 パッド-パッド変動のために調整を行う半導体基板の研磨方法

Country Status (8)

Country Link
US (1) US11081359B2 (zh)
EP (1) EP3849742B1 (zh)
JP (1) JP7341223B2 (zh)
KR (1) KR102515998B1 (zh)
CN (2) CN114734373A (zh)
SG (1) SG11202102118TA (zh)
TW (1) TWI802747B (zh)
WO (1) WO2020055571A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
JP7420328B2 (ja) * 2021-12-27 2024-01-23 株式会社レゾナック うねり予測装置、うねり予測方法、被研磨物の加工方法及びプログラム
CN115752220A (zh) * 2022-12-09 2023-03-07 上海超硅半导体股份有限公司 一种硅片边缘形貌数据化方法

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US6878302B1 (en) 2000-03-30 2005-04-12 Memc Electronic Materials, Spa Method of polishing wafers
TWI268286B (en) 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
JP2002273649A (ja) 2001-03-15 2002-09-25 Oki Electric Ind Co Ltd ドレッサ−を有する研磨装置
US7364495B2 (en) * 2002-03-28 2008-04-29 Etsu Handotai Co., Ltd. Wafer double-side polishing apparatus and double-side polishing method
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KR20040056177A (ko) 2002-12-23 2004-06-30 주식회사 실트론 실리콘웨이퍼의 연마 장치
KR100529434B1 (ko) * 2003-02-04 2005-11-17 동부아남반도체 주식회사 반도체 기판 연마장치의 패드 컨디셔너
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TWI386989B (zh) * 2005-02-25 2013-02-21 Ebara Corp 研磨裝置及研磨方法
KR100623189B1 (ko) 2005-05-18 2006-09-13 삼성전자주식회사 슬러리 공급 장치 및 이를 갖는 웨이퍼 연마 장치
JP2007053298A (ja) 2005-08-19 2007-03-01 Nitta Haas Inc 研磨用組成物
SG173357A1 (en) 2005-11-11 2011-08-29 Hitachi Chemical Co Ltd Polishing slurry for silicon oxide, additive liquid and polishing method
KR20080062020A (ko) 2006-12-28 2008-07-03 주식회사 하이닉스반도체 반도체 웨이퍼의 가공방법
JP5057325B2 (ja) 2007-05-11 2012-10-24 ニッタ・ハース株式会社 研磨パッド
JP5275595B2 (ja) 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
JP5450946B2 (ja) 2007-09-27 2014-03-26 Sumco Techxiv株式会社 半導体ウェハの両面研磨方法
US8192248B2 (en) 2008-05-30 2012-06-05 Memc Electronic Materials, Inc. Semiconductor wafer polishing apparatus and method of polishing
JP5415735B2 (ja) 2008-09-26 2014-02-12 株式会社荏原製作所 ドレッシング方法、ドレッシング条件の決定方法、ドレッシング条件決定プログラム、および研磨装置
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TWI548483B (zh) 2011-07-19 2016-09-11 荏原製作所股份有限公司 研磨裝置及方法
KR101875880B1 (ko) 2011-09-01 2018-07-06 신에쯔 한도타이 가부시키가이샤 실리콘 웨이퍼의 연마방법 및 연마제
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US9566687B2 (en) 2014-10-13 2017-02-14 Sunedison Semiconductor Limited (Uen201334164H) Center flex single side polishing head having recess and cap
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JP6406238B2 (ja) * 2015-12-18 2018-10-17 株式会社Sumco ウェーハ研磨方法および研磨装置
US10600634B2 (en) * 2015-12-21 2020-03-24 Globalwafers Co., Ltd. Semiconductor substrate polishing methods with dynamic control
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US11504821B2 (en) * 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring

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