JPWO2020050110A1 - 表面応力センサーの受容体層クリーニング方法 - Google Patents
表面応力センサーの受容体層クリーニング方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/005—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by infrared radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2268—Arrangements for correcting or for compensating unwanted effects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/26—Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
- G01N5/02—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid by absorbing or adsorbing components of a material and determining change of weight of the adsorbent, e.g. determining moisture content
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
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Abstract
Description
ここで、前記薄膜はシリコン薄膜であり、前記表面応力の変化を前記シリコン薄膜の一部に設けられたピエゾ抵抗部により検出する表面応力センサーにおいて、前記シリコン薄膜の少なくとも一部に電流を流すことによって前記シリコン薄膜を発熱させてよい。
また、前記表面応力センサーはさらに枠形状の支持部材を有し、前記シリコン薄膜はその周囲に有する複数の狭窄部を介して前記支持部材の前記枠形状内に接続されるとともに、前記ピエゾ抵抗部は前記狭窄部に設けられてよい。
また、前記支持部材は前記シリコン薄膜と一体の部材であってよい。
また、前記ピエゾ抵抗部に前記電流を流してよい。
また、前記シリコン薄膜の表面に設けられた、周囲よりも高濃度でドーピングされた領域に前記電流を流してよい。
また、前記薄膜の少なくとも一方の面に輻射熱源からの輻射熱を与えることにより前記受容体層に熱を与えてよい。
また、前記薄膜はシリコン薄膜であり、前記輻射熱は少なくとも前記シリコン薄膜の前記受容体層を有していない側から与えてよい。
また、前記薄膜の少なくとも一方の面に加熱ガス流を与えてよい。
Claims (9)
- 薄膜の表面に設けられた受容体層により引き起こされた前記薄膜の表面応力の変化を検出する表面応力センサーにおいて、
前記薄膜の少なくとも一部の表面領域を発熱させ、または前記表面応力センサーの外部から前記受容体層に熱を与える、
表面応力センサーの受容体層のクリーニング方法。 - 前記薄膜はシリコン薄膜であり、
前記表面応力の変化を前記シリコン薄膜の一部に設けられたピエゾ抵抗部により検出する表面応力センサーにおいて、
前記シリコン薄膜の少なくとも一部に電流を流すことによって前記シリコン薄膜を発熱させる、請求項1に記載のクリーニング方法。 - 前記表面応力センサーはさらに枠形状の支持部材を有し、
前記シリコン薄膜はその周囲に有する複数の狭窄部を介して前記支持部材の前記枠形状内に接続されるとともに、前記ピエゾ抵抗部は前記狭窄部に設けられる、請求項2に記載のクリーニング方法。 - 前記支持部材は前記シリコン薄膜と一体の部材である、請求項3に記載のクリーニング方法。
- 前記ピエゾ抵抗部に前記電流を流す、請求項2から4の何れかに記載のクリーニング方法。
- 前記シリコン薄膜の表面に設けられた、周囲よりも高濃度でドーピングされた領域に前記電流を流す、請求項2から4の何れかに記載のクリーニング方法。
- 前記薄膜の少なくとも一方の面に輻射熱源からの輻射熱を与えることにより前記受容体層に熱を与える、請求項1に記載のクリーニング方法。
- 前記薄膜はシリコン薄膜であり、
前記輻射熱は少なくとも前記シリコン薄膜の前記受容体層を有していない側から与える、請求項7に記載のクリーニング方法。 - 前記薄膜の少なくとも一方の面に加熱ガス流を与える、請求項1に記載のクリーニング方法。
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WO2019059326A1 (ja) * | 2017-09-20 | 2019-03-28 | 旭化成株式会社 | 表面応力センサ、中空構造素子及びそれらの製造方法 |
JP7375940B2 (ja) * | 2020-08-20 | 2023-11-08 | 日本電気株式会社 | 標的分析装置、標的分析方法、および標的分析システム |
Citations (5)
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JPH03272444A (ja) * | 1990-03-20 | 1991-12-04 | Sanyo Electric Co Ltd | 水素ガスセンサ |
US5985673A (en) * | 1994-12-22 | 1999-11-16 | Arizona Baord Of Regents | Method for regeneration of a sensor |
WO2011148774A1 (ja) * | 2010-05-24 | 2011-12-01 | 独立行政法人物質・材料研究機構 | 表面応力センサ |
US20120108450A1 (en) * | 2007-04-13 | 2012-05-03 | The Regents Of The University Of California | Receptors Useful for Gas Phase Chemical Sensing |
JP2016151504A (ja) * | 2015-02-18 | 2016-08-22 | 富士通株式会社 | ガス検知装置及びガス検知方法 |
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US4125820A (en) * | 1975-10-06 | 1978-11-14 | Honeywell Inc. | Stress sensor apparatus |
JP3272444B2 (ja) | 1993-02-01 | 2002-04-08 | ティーディーケイ株式会社 | テープ編集装置 |
US20080108164A1 (en) * | 2006-11-06 | 2008-05-08 | Oleynik Vladislav A | Sensor System and Method |
JP2011169634A (ja) | 2010-02-16 | 2011-09-01 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
US8641828B2 (en) * | 2011-07-13 | 2014-02-04 | United Microelectronics Corp. | Cleaning method of semiconductor manufacturing process |
US9506822B2 (en) * | 2012-04-17 | 2016-11-29 | National Institute For Materials Science | Double-side-coated surface stress sensor |
WO2014196606A1 (ja) * | 2013-06-05 | 2014-12-11 | 独立行政法人物質・材料研究機構 | 抗体または抗原を固定化した膜型表面応力センサとその製造方法並びにこれを用いた免疫測定方法 |
WO2016121155A1 (ja) * | 2015-01-27 | 2016-08-04 | 国立研究開発法人物質・材料研究機構 | 多孔質材料または粒状材料を受容体層として有するセンサ |
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- 2019-08-28 JP JP2020541153A patent/JP7090939B2/ja active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03272444A (ja) * | 1990-03-20 | 1991-12-04 | Sanyo Electric Co Ltd | 水素ガスセンサ |
US5985673A (en) * | 1994-12-22 | 1999-11-16 | Arizona Baord Of Regents | Method for regeneration of a sensor |
US20120108450A1 (en) * | 2007-04-13 | 2012-05-03 | The Regents Of The University Of California | Receptors Useful for Gas Phase Chemical Sensing |
WO2011148774A1 (ja) * | 2010-05-24 | 2011-12-01 | 独立行政法人物質・材料研究機構 | 表面応力センサ |
JP2016151504A (ja) * | 2015-02-18 | 2016-08-22 | 富士通株式会社 | ガス検知装置及びガス検知方法 |
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US20210215556A1 (en) | 2021-07-15 |
WO2020050110A1 (ja) | 2020-03-12 |
JP7090939B2 (ja) | 2022-06-27 |
US11796408B2 (en) | 2023-10-24 |
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