JP5467775B2 - ガスセンサの性能評価方法 - Google Patents
ガスセンサの性能評価方法 Download PDFInfo
- Publication number
- JP5467775B2 JP5467775B2 JP2009017781A JP2009017781A JP5467775B2 JP 5467775 B2 JP5467775 B2 JP 5467775B2 JP 2009017781 A JP2009017781 A JP 2009017781A JP 2009017781 A JP2009017781 A JP 2009017781A JP 5467775 B2 JP5467775 B2 JP 5467775B2
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- JP
- Japan
- Prior art keywords
- voltage
- bridge circuit
- gas sensor
- comparison element
- detection element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000011156 evaluation Methods 0.000 title claims description 21
- 238000001514 detection method Methods 0.000 claims description 69
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 30
- 239000003054 catalyst Substances 0.000 description 15
- 229910052697 platinum Inorganic materials 0.000 description 15
- 230000007704 transition Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
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- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
2 ガスセンサ
3 交流電源
4 マルチメータ(出力手段)
B ブリッジ回路
Rs 検出素子
Rr 比較素子
Rv 可変抵抗
V0 中点電位差
Claims (1)
- 検知対象ガスと燃焼する検出素子と、前記検知対象ガスと燃焼しない比較素子と、から構成されるガスセンサの性能評価方法であって、
前記検出素子及び前記比較素子を含むブリッジ回路に交流電圧を供給する第1工程と、
前記検出素子又は前記比較素子の何れか一方の温度が予め定めた値になるように前記交流電圧の大きさを調整する第3工程と、
前記交流電圧を供給したときの前記ブリッジ回路の中点電位差が最小になるように前記ブリッジ回路を構成する可変抵抗を調整する第4工程と、
前記可変抵抗を調整した後に前記検出素子及び前記比較素子の何れか一方の温度が前記予め定めた値になるように前記交流電圧の大きさを再び調整する第5工程と、
前記交流電圧を供給したときの前記ブリッジ回路の中点電位差の大きさに基づいて前記ガスセンサを評価する第2工程と、
を順次行うことを特徴とするガスセンサの性能評価方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009017781A JP5467775B2 (ja) | 2009-01-29 | 2009-01-29 | ガスセンサの性能評価方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009017781A JP5467775B2 (ja) | 2009-01-29 | 2009-01-29 | ガスセンサの性能評価方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010175367A JP2010175367A (ja) | 2010-08-12 |
| JP5467775B2 true JP5467775B2 (ja) | 2014-04-09 |
Family
ID=42706493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009017781A Expired - Fee Related JP5467775B2 (ja) | 2009-01-29 | 2009-01-29 | ガスセンサの性能評価方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5467775B2 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6574472B2 (ja) * | 2017-12-13 | 2019-09-11 | 矢崎エナジーシステム株式会社 | ガス検知素子、及び、接触燃焼式ガスセンサ |
| JP7591796B2 (ja) * | 2021-05-12 | 2024-11-29 | 国立研究開発法人産業技術総合研究所 | ガス検出装置 |
| CN118392946B (zh) * | 2024-06-28 | 2024-11-19 | 南方电网数字电网研究院股份有限公司 | 目标环境多组分气体下mos气体传感器选择系统 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59180350A (ja) * | 1983-03-30 | 1984-10-13 | Matsushita Electric Works Ltd | ガス検知回路 |
| JPS63128249A (ja) * | 1986-11-18 | 1988-05-31 | Matsushita Electric Ind Co Ltd | 接触燃焼式ガスセンサ |
| JP2784404B2 (ja) * | 1993-07-16 | 1998-08-06 | 矢崎総業株式会社 | ガス警報装置 |
| JP3308784B2 (ja) * | 1995-11-17 | 2002-07-29 | 矢崎総業株式会社 | 酸素濃度計のセンサ特性調整回路 |
| JPH10142184A (ja) * | 1996-11-11 | 1998-05-29 | Matsushita Electric Ind Co Ltd | ガスセンサとその制御装置 |
| JP4790430B2 (ja) * | 2006-01-25 | 2011-10-12 | 泰三 石川 | 接触燃焼式ガスセンサを用いた検出回路 |
| JP2007232406A (ja) * | 2006-02-27 | 2007-09-13 | Fis Inc | ガス検出装置 |
| JP2008298617A (ja) * | 2007-05-31 | 2008-12-11 | Yazaki Corp | 接触燃焼式ガスセンサおよび接触燃焼式ガスセンサの製造方法 |
-
2009
- 2009-01-29 JP JP2009017781A patent/JP5467775B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010175367A (ja) | 2010-08-12 |
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