JPWO2020047270A5 - - Google Patents

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JPWO2020047270A5
JPWO2020047270A5 JP2021535495A JP2021535495A JPWO2020047270A5 JP WO2020047270 A5 JPWO2020047270 A5 JP WO2020047270A5 JP 2021535495 A JP2021535495 A JP 2021535495A JP 2021535495 A JP2021535495 A JP 2021535495A JP WO2020047270 A5 JPWO2020047270 A5 JP WO2020047270A5
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Japan
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source
drain
power semiconductor
semiconductor device
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JP2021535495A
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Japanese (ja)
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JP2021535625A5 (https=
JP2021535625A (ja
JP7618554B2 (ja
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Priority claimed from PCT/US2019/048834 external-priority patent/WO2020047270A1/en
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Publication of JPWO2020047270A5 publication Critical patent/JPWO2020047270A5/ja
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JP2021535495A 2018-08-29 2019-08-29 オン抵抗が低減されたラテラルパワーデバイス Active JP7618554B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862724106P 2018-08-29 2018-08-29
US62/724,106 2018-08-29
PCT/US2019/048834 WO2020047270A1 (en) 2018-08-29 2019-08-29 Lateral power device with reduced on-resistance

Publications (4)

Publication Number Publication Date
JP2021535625A JP2021535625A (ja) 2021-12-16
JP2021535625A5 JP2021535625A5 (https=) 2022-09-02
JPWO2020047270A5 true JPWO2020047270A5 (https=) 2022-09-02
JP7618554B2 JP7618554B2 (ja) 2025-01-21

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JP2021535495A Active JP7618554B2 (ja) 2018-08-29 2019-08-29 オン抵抗が低減されたラテラルパワーデバイス

Country Status (7)

Country Link
US (1) US11101349B2 (https=)
EP (1) EP3844820B1 (https=)
JP (1) JP7618554B2 (https=)
KR (1) KR102776818B1 (https=)
CN (1) CN112913031A (https=)
TW (1) TWI748233B (https=)
WO (1) WO2020047270A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11749670B2 (en) * 2020-05-18 2023-09-05 Taiwan Semiconductor Manufacturing Company Limited Power switch for backside power distribution
CN114664725B (zh) * 2020-12-23 2025-07-29 华润微电子（重庆）有限公司 GaN器件互联结构及其制备方法
WO2023272674A1 (en) 2021-07-01 2023-01-05 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based multi-channel switching semiconductor device and method for manufacturing the same
CN115223965A (zh) * 2022-06-29 2022-10-21 乂馆信息科技(上海)有限公司 一种大功率hemt器件和hemt器件拓扑连接结构

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US6683380B2 (en) * 2000-07-07 2004-01-27 Texas Instruments Incorporated Integrated circuit with bonding layer over active circuitry
JP2002164437A (ja) * 2000-07-27 2002-06-07 Texas Instruments Inc ボンディングおよび電流配分を分散したパワー集積回路および方法
US20030011045A1 (en) * 2001-07-10 2003-01-16 Tavanza, Inc. Compact layout for a semiconductor device
US6972464B2 (en) * 2002-10-08 2005-12-06 Great Wall Semiconductor Corporation Power MOSFET
KR100772920B1 (ko) * 2006-02-20 2007-11-02 주식회사 네패스 솔더 범프가 형성된 반도체 칩 및 제조 방법
KR101888369B1 (ko) * 2010-10-12 2018-08-14 퀄컴 인코포레이티드 박형 기판을 갖는 수직 반도체 디바이스
JP5580230B2 (ja) * 2011-02-28 2014-08-27 パナソニック株式会社 半導体装置
US9006099B2 (en) * 2011-06-08 2015-04-14 Great Wall Semiconductor Corporation Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump
US20140159130A1 (en) * 2012-11-30 2014-06-12 Enpirion, Inc. Apparatus including a semiconductor device coupled to a decoupling device
EP2741324B1 (en) * 2012-12-10 2018-10-31 IMEC vzw III nitride transistor with source connected heat-spreading plate and method of making the same
US8928037B2 (en) * 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
WO2014188651A1 (ja) * 2013-05-20 2014-11-27 パナソニックＩｐマネジメント株式会社 半導体装置
TWI515902B (zh) 2013-09-10 2016-01-01 台達電子工業股份有限公司 半導體裝置
TWI577022B (zh) * 2014-02-27 2017-04-01 台達電子工業股份有限公司 半導體裝置與應用其之半導體裝置封裝體
US10236236B2 (en) * 2013-09-10 2019-03-19 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
JP5669119B1 (ja) * 2014-04-18 2015-02-12 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体
KR102272382B1 (ko) * 2014-11-21 2021-07-05 삼성전자주식회사 반도체 소자
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US9972571B1 (en) * 2016-12-15 2018-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. Logic cell structure and method

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