JPWO2020027024A1 - 感光性樹脂組成物、めっき方法及び金属パターンの製造方法 - Google Patents
感光性樹脂組成物、めっき方法及び金属パターンの製造方法 Download PDFInfo
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- JPWO2020027024A1 JPWO2020027024A1 JP2020533521A JP2020533521A JPWO2020027024A1 JP WO2020027024 A1 JPWO2020027024 A1 JP WO2020027024A1 JP 2020533521 A JP2020533521 A JP 2020533521A JP 2020533521 A JP2020533521 A JP 2020533521A JP WO2020027024 A1 JPWO2020027024 A1 JP WO2020027024A1
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- photosensitive resin
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- acrylate monomer
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- PKZWDLHLOBYXKV-UHFFFAOYSA-M oxazine-1 perchlorate Chemical compound [O-]Cl(=O)(=O)=O.C1=CC(N(CC)CC)=CC2=[O+]C3=CC(N(CC)CC)=CC=C3N=C21 PKZWDLHLOBYXKV-UHFFFAOYSA-M 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005650 polypropylene glycol diacrylate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 description 1
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 1
- GHJOIQFPDMIKHT-UHFFFAOYSA-N propane-1,2,3-triol;prop-2-enoic acid Chemical compound OC(=O)C=C.OCC(O)CO GHJOIQFPDMIKHT-UHFFFAOYSA-N 0.000 description 1
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
- 239000004250 tert-Butylhydroquinone Substances 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 235000019281 tert-butylhydroquinone Nutrition 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- FKVXIGHJGBQFIH-UHFFFAOYSA-K trisodium 5-amino-3-[[4-[4-[(7-amino-1-hydroxy-3-sulfonatonaphthalen-2-yl)diazenyl]phenyl]phenyl]diazenyl]-4-hydroxynaphthalene-2,7-disulfonate Chemical compound C1=CC(=CC=C1C2=CC=C(C=C2)N=NC3=C(C=C4C=CC(=CC4=C3[O-])N)S(=O)(=O)O)N=NC5=C(C6=C(C=C(C=C6C=C5S(=O)(=O)O)S(=O)(=O)[O-])N)[O-].[Na+].[Na+].[Na+] FKVXIGHJGBQFIH-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- ROVRRJSRRSGUOL-UHFFFAOYSA-N victoria blue bo Chemical compound [Cl-].C12=CC=CC=C2C(NCC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=C1C=CC(=[N+](CC)CC)C=C1 ROVRRJSRRSGUOL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
- C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
- C08F265/06—Polymerisation of acrylate or methacrylate esters on to polymers thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
(A)アルカリ可溶性樹脂、(B)光重合開始剤及び(C)アクリレートモノマーを含有し、
(C)アクリレートモノマーに対して、(D)メタクリレートモノマーの含有率が0〜5質量%であり、
(C)アクリレートモノマーとして、(C1)エチレンオキサイド変性ペンタエリスリトールテトラアクリレート(一般式(i)で示され、l+m+n+o=24〜48である化合物)を含有し、
(C)アクリレートモノマー全量に対して、(C1)エチレンオキサイド変性ペンタエリスリトールテトラアクリレート(一般式(i)で示され、l+m+n+o=24〜48である化合物)の含有率が30〜70質量%であることを特徴とする感光性樹脂組成物。
該感光性樹脂組成物が、(C)アクリレートモノマーとして、(C2)エチレンオキサイド変性ペンタエリスリトールテトラアクリレート(一般式(i)で示され、l+m+n+o=4〜8である化合物)を含有し、(C)アクリレートモノマー全量に対して、(C2)エチレンオキサイド変性ペンタエリスリトールテトラアクリレート(一般式(i)で示され、l+m+n+o=4〜8である化合物)の含有率が30〜70質量%である<1>記載の感光性樹脂組成物。
該感光性樹脂組成物が(E)重合禁止剤を含有し、(A)アルカリ可溶性樹脂、(B)光重合開始剤、(C)アクリレートモノマー及び(E)重合禁止剤の総量に対して、(E)重合禁止剤の含有率が400〜1000ppmである<1>記載の感光性樹脂組成物。
該感光性樹脂組成物が(F)光発色剤を含有し、(A)アルカリ可溶性樹脂、(B)光重合開始剤、(C)アクリレートモノマー及び(F)光発色剤の総量に対して(F)光発色剤の含有率が0.15〜1.5質量%である<1>記載の感光性樹脂組成物。
<1>ないし<4>の何れかに記載の感光性樹脂組成物を含む感光性樹脂層を基材上に形成し、次にパターン露光を実施して露光部を硬化させ、次いでアルカリ現像を実施して非露光部の感光性樹脂層を除去して、硬化した感光性樹脂層を含むレジストパターンを形成した後、露出している基材にめっきを施すことを特徴とするめっき方法。
<5>に記載のめっき方法を用いて基材上に金属パターンを形成することを特徴とする金属パターンの製造方法。
また、本発明によれば、パターン形成後のレジスト剥離が容易で、かつ、レジストパターンが基材上に安定して保持されるので、めっき工程において微細なラインやドットが基材上に形成され、高い解像性を有する金属パターンを形成することができる。
(A)アルカリ可溶性樹脂とは、具体的には、酸性基を含む樹脂であり、酸価が40mgKOH/g以上である樹脂が挙げられる。該酸性基としては、具体的にはカルボキシル基、フェノール性水酸基、スルホン酸基、リン酸基等が挙げられる。
なお、「(メタ)アクリル系」、「(メタ)アクリレート」等と記載したときは、それぞれ、「アクリル系若しくはメタクリル系」、「アクリレート若しくはメタクリレート」等を意味する。
酸価が40mgKOH/g未満では、アルカリ現像時間が長くなる場合があり、一方、500mgKOH/gを超えると、感光性樹脂層と基材との密着性が悪くなる場合がある。上記酸価は、JIS K2501:2003に準拠して測定した値である。
これらは単独で又は2種類以上を組み合わせて使用される。なかでも、イミダゾール二量体が、高感度であり好適に使用でき、さらに、2−(o−クロロフェニル)−4,5−ジフェニルイミダゾール二量体が有用に使用できる。
「エトキシ基」とは、「−CH2CH2O−」である。「プロポキシ基」とは、「−C3H6O−」であり、直鎖状であってもよいし、分岐状であってもよい。
本発明の感光性樹脂組成物は、(D)メタクリレートモノマーを含有してもよく、その含有率は、(C)アクリレートモノマーに対して0〜5質量%である。(D)メタクリレートモノマーの含有率が5質量%超の場合、レジスト剥離の際に、硬化した感光性樹脂層の剥離片が大きくなり、溶解しなくなる。
含有率が30質量%よりも小さいと、又は、含有率が小さすぎると、アンダーカットが大きくなる場合があり、含有率が70質量%よりも大きいと、又は、含有率が大きすぎると、アルカリ現像で感光性樹脂層が膨潤し易くなり、密着性が悪化する場合や現像によって微細なラインやドットが剥がれる場合がある。
(E)重合禁止剤は、ラジカルを補足して感光性樹脂組成物の光化学反応を停止することができるものであれば特に限定されないが、例えば、ハイドロキノン、メチルハイドロキノン、4−メトキシフェノール、2,5−ジ−tert−ブチルハイドロキノン、tert−ブチルハイドロキノン、2,6−ジ−tert−ブチル−p−クレゾール、p−ベンゾキノン、メチル−p−ベンゾキノン、tert−ブチル−p−ベンゾキノン、カテコール、4−tert−ブチルカテコール、3−メトキシカテコール、ピロガロール、ピクリン酸等のハイドロキノン類が挙げられる。
また、フェノキサジン、3,7−ビス(ジエチルアミノ)フェノキサジン−5−イウム・ペルクロラート、5−アミノ−9−(ジメチルアミノ)−10−メチルベンゾ[a]フェノキサジン−7−イウム・クロリド等のフェノキサジン誘導体が挙げられる。
また、塩化銅、N−ニトロソフェニルヒドロキシルアミンアルミニウム塩等が挙げられる。
支持体は、未硬化又は硬化した感光性樹脂層から剥離できればよく、活性光線を透過させる透明フィルムが好ましい。該支持体の厚みは薄い方が、光の屈折が少ないので好ましく、厚い方が、塗工安定性に優れるため好ましいが、5〜50μmが特に好ましい。このようなフィルムとしては、ポリエチレンテレフタレート、ポリカーボネート等のフィルムが挙げられる。
該感光性樹脂層は、本発明の感光性樹脂組成物からなる層である。
また、プリント配線板製造等に使用される、銅張積層板、無電解めっき済基板、電解めっき済基板、無電解めっき用触媒付与基板、フレキシブル銅張積層板、フレキシブルステンレス板、多段構造基板等が使用できる。
現像液には、界面活性剤、消泡剤、溶剤等を、適宜少量混入することもできる。現像処理方法としては、ディップ方式、バトル方式、スプレー方式、ブラッシング、スクレーピング等があり、スプレー方式が除去速度の点からは最も適している。現像処理の温度は、15〜35℃が好ましく、また、スプレー圧は、0.02〜0.3MPaが好ましい。
金属パターンの形成には、各工程において上記した方法を使用することが好ましい。
(B−2)4,4’−ビス(ジエチルアミノ)ベンゾフェノン
(C2−1)エチレンオキサイド変性ペンタエリスリトールテトラアクリレート(一般式(i)で示され、l+m+n+o=4である化合物)
(C3−2)ポリエチレングリコール♯600ジアクリレート(エチレンオキサイドの繰り返し数が14)
表1に示す各成分を混合し、感光性樹脂組成物及び塗工液を得た。なお、表1における各成分の配合量の単位は、質量部を表す。
得られた塗工液を、アプリケーターを用いて、ポリエチレンテレフタレート(PET)フィルム(商品名:R310、16μm厚、三菱ケミカル社製)上に塗工し、80℃で8分間乾燥し、溶剤をとばし、PETフィルムの片面上に、実施例1−1〜1−6、比較例1−1〜1−4の感光性樹脂組成物からなる感光性樹脂層(乾燥膜厚:30μm)を設けたDFRを得た。
一方、実施例1−1〜1−6では、全て良好な50μmライン&スペースのパターンが作製できた。
一方、実施例1−1〜1−6では、全て良好なNiパターンが作製できた。
実施例1−1〜1−6の感光性樹脂組成物によるレジストパターンの剥離は、良好に実施できた。
一方、(C)アクリレートモノマー全量に対して、(D)の含有率が8.8質量%であって5質量%超である感光性樹脂組成物を用いた比較例1−4では、50μmのスペース間にレジストパターンの残渣が残存するという問題が発生した。
表2に示す各成分を混合し、感光性樹脂組成物及び塗工液を得た。なお、表2における各成分の配合量の単位は、質量部を表す。また、(E)の含有率は、(A)、(B)、(C)及び(E)の総量に対する(E)の含有率であり、その単位は質量ppmである。
得られた塗工液を、アプリケーターを用いて、ポリエチレンテレフタレート(PET)フィルム(商品名:R310、16μm厚、三菱ケミカル社製)上に塗工し、80℃で8分間乾燥し、溶剤をとばし、PETフィルムの片面上に実施例2−1〜2−7、比較例2−1の感光性樹脂組成物を含有する感光性樹脂層(乾燥膜厚:30μm)を設けたDFRを得た。
また、(E)の含有率が400ppm未満である実施例2−7では、現像工程により、直径100μm以上のドットパターンは基板上に残存したが、直径80μmのドットパターンは若干失われていた。
一方、実施例2−1〜2−7では、めっき液の滲みこみは無く、良好なNi金属層が形成されていた。
表3に示す各成分を混合し、感光性樹脂組成物及び塗工液を得た。なお、表3における各成分の配合量の単位は質量部である。得られた塗工液を、アプリケーターを用いて、ポリエチレンテレフタレート(PET)フィルム(商品名:R310、16μm厚、三菱ケミカル社製)上に塗工し、80℃で8分間乾燥し、溶剤をとばし、PETフィルムの片面上に実施例3−1〜3−7、比較例3−1〜3−2の感光性樹脂組成物からなる感光性樹脂層(乾燥膜厚:50μm)を設けたDFRを得た。
Claims (6)
- 該感光性樹脂組成物が、(C)アクリレートモノマーとして、(C2)エチレンオキサイド変性ペンタエリスリトールテトラアクリレート(一般式(i)で示され、l+m+n+o=4〜8である化合物)を含有し、(C)アクリレートモノマー全量に対して、(C2)エチレンオキサイド変性ペンタエリスリトールテトラアクリレート(一般式(i)で示され、l+m+n+o=4〜8である化合物)の含有率が30〜70質量%である請求項1記載の感光性樹脂組成物。
- 該感光性樹脂組成物が(E)重合禁止剤を含有し、(A)アルカリ可溶性樹脂、(B)光重合開始剤、(C)アクリレートモノマー及び(E)重合禁止剤の総量に対して、(E)重合禁止剤の含有率が400〜1000ppmである請求項1記載の感光性樹脂組成物。
- 該感光性樹脂組成物が(F)光発色剤を含有し、(A)アルカリ可溶性樹脂、(B)光重合開始剤、(C)アクリレートモノマー及び(F)光発色剤の総量に対して、(F)光発色剤の含有率が0.15〜1.5質量%である請求項1記載の感光性樹脂組成物。
- 請求項1ないし請求項4の何れかの請求項に記載の感光性樹脂組成物を含む感光性樹脂層を基材上に形成し、次にパターン露光を実施して露光部を硬化させ、次いでアルカリ現像を実施して非露光部の感光性樹脂層を除去して、硬化した感光性樹脂層を含むレジストパターンを形成した後、露出している基材にめっきを施すことを特徴とするめっき方法。
- 請求項5に記載のめっき方法を用いて基材上に金属パターンを形成することを特徴とする金属パターンの製造方法。
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