JPWO2019230668A1 - 半導体装置製造方法 - Google Patents
半導体装置製造方法 Download PDFInfo
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- JPWO2019230668A1 JPWO2019230668A1 JP2020522189A JP2020522189A JPWO2019230668A1 JP WO2019230668 A1 JPWO2019230668 A1 JP WO2019230668A1 JP 2020522189 A JP2020522189 A JP 2020522189A JP 2020522189 A JP2020522189 A JP 2020522189A JP WO2019230668 A1 JPWO2019230668 A1 JP WO2019230668A1
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Images
Classifications
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
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- C09J183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
溶媒:重クロロホルム
積算回数:1800回
測定温度:25℃
測定温度:40℃
溶離液:テトラヒドロフラン(THF)
試料濃度:0.1〜0.2質量%
流量:1mL/分
標準試料:ポリスチレン
検出器:UV-VIS検出器(商品名「SPD-20A」,株式会社島津製作所製)
以下のようにして、所定のウエハ積層体において総数71の貫通電極を形成した。
まず、表面に再配線層を伴う第1シリコンウエハ(直径300mm)と、第2シリコンウエハ(直径300mm)とを用意した。第1シリコンウエハの再配線層は、再配線層外に露出する領域を有するCu配線パターンを含む。次に、第1シリコンウエハの再配線側と第2シリコンウエハとを、後記の接着剤組成物Cを使用して接合した。具体的には、まず、一方のウエハの表面に所定量の接着剤組成物Cをスピンコーティングによって塗布して接着剤組成物層を形成し、加熱によって当該組成物層を乾燥させて固化させた。その際、まず80℃で4分間の加熱を行い、続いて100℃で2分間の加熱を行った。次に、一方のウエハ上に形成された接着剤組成物層を介して二つのウエハを加圧しつつ貼り合せた後、接着剤組成物層について加熱によって硬化させた。貼り合わせにおいて、加圧力は例えば1000g/cm2であり、温度は50℃である。硬化の際、まず135℃で30分間の加熱を行い、続いて170℃で30分間の加熱を行った。ウエハ間を接合する接着剤層の厚さは2.5μmである。以上のようにして、第1および第2シリコンウエハとこれらを接合している接着剤層(厚さ2.5μm)とを含む積層構造を有するウエハ積層体を作製した。
次に、ウエハ積層体における第2シリコンウエハに対してグラインド装置(商品名「DGP8761HC」,株式会社ディスコ製)を使用して研削加工を行い、第2シリコンウエハを厚さ10μmまで薄化した。次に、第2シリコンウエハの被研削面上にCVD法によりシリコン酸化膜(絶縁膜)を形成した。次に、当該絶縁膜において所定のパターン形状の凹部を形成した。凹部は、リソグラフィ技術によって絶縁膜上に所定のレジストパターンを形成した後、当該レジストパターンをエッチングマスクとして利用して行う、当該絶縁材料膜に対するエッチング処理により、形成した。
後記のようにして得られるエポキシ基含有のポリオルガノシルセスキオキサン100質量部と、プロピレングリコールモノメチルエーテルアセテート115質量部と、アンチモン系スルホニウム塩(商品名「SI−150L」,三新化学工業株式会社製)0.45質量部(固形分として)と、(4-ヒドロキシフェニル)ジメチルスルホニウムメチルサルファイト(商品名「サンエイドSI助剤」,三新化学工業株式会社製)0.05質量部とを混合し、接着剤組成物Cを得た。
還流冷却器と、窒素ガス導入管と、撹拌装置と、温度計とを備えた300mLのフラスコ内で、窒素ガスを導入しながら、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン161.5mmol(39.79g)と、フェニルトリメトキシシラン9mmol(1.69g)と、溶媒としてのアセトン165.9gとを混合して50℃に昇温した。次に、当該混合物に、5%炭酸カリウム水溶液4.7g(炭酸カリウムとして1.7mmol)を5分かけて滴下し、続いて水1700mmol(30.6g)を20分かけて滴下した。滴下操作の間、混合物に著しい温度上昇は生じなかった。当該滴下操作の後、フラスコ内に窒素ガスを導入しながら、50℃で4時間、重縮合反応を行った。重縮合反応後の反応溶液中の生成物を分析したところ、数平均分子量は1900であり、分子量分散度は1.5であった。そして、静置されて冷却された反応溶液について、相分離によって生じる下層液(水相)が中性になるまで水洗を繰り返した後、上層液を分取し、1mmHgおよび40℃の条件で溶媒量が25質量%になるまで上層液から溶媒を留去し、無色透明の液状の生成物(エポキシ基含有ポリオルガノシルセスキオキサン)を得た。
洗浄工程において、酸素プラズマ洗浄処理を行わないこと、および、硫酸洗浄処理の後にアルゴンスパッタリング洗浄処理を行ったこと、以外は実施例1のプロセスと同様にして、上記のウエハ積層体に対して実施例2のプロセスを行った。実施例2におけるアルゴンスパッタリング洗浄処理では、スパッタリング装置(商品名「Producer」,アプライドマテリアルズ社製)を使用し、Arスパッタリング(洗浄処理)時間を3分とした。
洗浄工程において、硫酸洗浄処理の後にアルゴンスパッタリング洗浄処理を行ったこと以外は実施例1のプロセスと同様にして、上記のウエハ積層体に対して実施例3のプロセスを行った。実施例3におけるアルゴンスパッタリング洗浄処理では、スパッタリング装置(商品名「Producer」,アプライドマテリアルズ社製)を使用し、Arスパッタリング(洗浄処理)時間を3分とした。
洗浄工程において、硫酸洗浄処理の時間を43秒から86秒としたこと、および、硫酸洗浄処理の後にアルゴンスパッタリング洗浄処理を行ったこと、以外は実施例1のプロセスと同様にして、上記のウエハ積層体に対して実施例4のプロセスを行った。実施例4におけるアルゴンスパッタリング洗浄処理では、スパッタリング装置(商品名「Producer」,アプライドマテリアルズ社製)を使用し、Arスパッタリング(洗浄処理)時間を3分とした。
洗浄工程において、酸素プラズマ洗浄処理を行わなかったこと以外は実施例1のプロセスと同様にして、上記のウエハ積層体に対して比較例1のプロセスを行った。
実施例1〜4および比較例1の各ウエハ積層体について、形成された総数71の貫通電極のチェーン抵抗(デイジーチェーン抵抗)の値を測定した。その測定結果を図4から図7に示す。図4は、実施例1および比較例1に係る各チェーン抵抗測定結果を表すグラフである。図5は、実施例2および比較例1に係る各チェーン抵抗測定結果を表すグラフである。図6は、実施例1、実施例3、および比較例1に係る各チェーン抵抗測定結果を表すグラフである。図7は、実施例3、実施例4、および比較例1に係る各チェーン抵抗測定結果を表すグラフである。各グラフにおいて、横軸は抵抗の値(Ω)を表し、縦軸は累積確率(%)を表す。また、グラフ中の各プロットは、所定の一の貫通電極のコンタクト抵抗(第1シリコンウエハの配線パターンとその上の貫通電極とのコンタクト抵抗)を示すものである。
上述の抵抗値測定において、実施例1〜4の方法により形成された貫通電極の99%の測定点のコンタクト抵抗は、700Ω以下(実施例1)、450Ω以下(実施例2)、150Ω以下(実施例3)、および250Ω以下(実施例4)であった。図4から図7に示すグラフから、実施例1〜4の方法において形成された貫通電極のコンタクト抵抗値は、比較例1の方法において形成された貫通電極のコンタクト抵抗値よりも、大きく低減されていることや、ばらつきが大きく抑制されていることが、判る。
[1]配線パターンを含む回路形成面を有する第1ウエハ、主面とこれとは反対の裏面を有する第2ウエハ、および、SiOC系ポリマーを含有し且つ前記第1ウエハの前記回路形成面と前記第2ウエハの前記裏面との間に介在する接着剤層、を含む積層構造を有するウエハ積層体を用意する、第1工程と、
前記ウエハ積層体において、前記第2ウエハの前記主面側の一部をマスクするマスクパターンを介しての当該第2ウエハ側からのエッチング処理により、当該第2ウエハおよび前記接着剤層を貫通して前記第1ウエハにおける前記配線パターンに至るホールを形成する、第2工程と、
前記ホールの内面に絶縁膜を形成する第3工程と、
前記ホール内の前記絶縁膜における前記配線パターン上の部分をエッチング除去する第4工程と、
前記第4工程を経た前記ウエハ積層体を、酸素プラズマ洗浄処理および/またはアルゴンスパッタリング洗浄処理を含む洗浄処理に付す、第5工程と、
前記洗浄工程を経た前記ホール内への導電材料の充填によって導電部を形成する第6工程と、を含む半導体装置製造方法。
[2]前記SiOC系ポリマーにおける、炭素割合は、20〜70質量%、30〜70質量%、又は40〜60質量%であり、水素割合は、2〜20質量%、3〜15質量%、又は4〜10質量%であり、酸素割合は、10〜40質量%、15〜35質量%、又は20〜30質量%であり、ケイ素割合は、3〜40質量%、5〜30質量%、又は10〜20質量%である、[1]に記載の半導体装置製造方法。
[3]エッチング処理は、反応性イオンエッチングである、[1]又は[2]に記載の半導体装置製造方法。
[4]前記洗浄処理は、酸素プラズマ洗浄処理およびそれより後のアルゴンスパッタリング洗浄処理を含む、[1]から[3]のいずれか一つに記載の半導体装置製造方法。
[5]前記酸素プラズマ洗浄処理の処理時間は、5〜120秒、10〜60秒、又は15〜40秒である、[1]から[4]のいずれか一つに記載の半導体装置製造方法。
[6]前記アルゴンスパッタリング洗浄処理の処理時間は0.5〜5分、又は2〜4分である、[1]から[5]のいずれか一つに記載の半導体装置製造方法。
[7]前記洗浄処理は、酸素プラズマ洗浄処理およびアルゴンスパッタリング洗浄処理の間の硫酸洗浄処理を含む、[1]から[6]のいずれか一つに記載の半導体装置製造方法。
[8]前記硫酸洗浄処理の処理時間は、10〜100秒、又は20〜90秒である、[7]に記載の半導体装置製造方法。
[9]第6工程における導電材料の充填手法は、電気めっき法である、[1]から[8]のいずれか一つに記載の半導体装置製造方法。
[10]前記接着剤層は、シロキサン系有機無機ハイブリッド接着剤を含む接着剤組成物の硬化物である、[1]から[9]のいずれか一つに記載の半導体装置製造方法。
[11]前記接着剤層は、重合性基含有ポリオルガノシルセスキオキサンを含む接着剤組成物の硬化物である、[1]から[10]のいずれか一つに記載の半導体装置製造方法。
[12]前記接着剤組成物における前記重合性基含有ポリオルガノシルセスキオキサンの含有割合は、70質量%以上、80〜99.8質量%、又は90〜99.5質量%である、[11]に記載の半導体装置製造方法。
[13]前記重合性基含有ポリオルガノシルセスキオキサンは、シロキサン構成単位として、下記の式(1)で表される構成単位を少なくとも含む第1構成単位[RSiO3/2]、および、下記の式(2)で表される構成単位を少なくとも含む第2構成単位[RSiO2/2(OR')]を含む(第2構成単位におけるRとR'は同じであってもよいし異なってもよい)、[11]又は[12]に記載の半導体装置製造方法。
(式(1)におけるR1および式(2)におけるR1は、それぞれ、エポキシ基または(メタ)アクリロイルオキシ基を含有する基を表す。式(2)におけるR2は、水素原子、または、炭素数1〜4のアルキル基を表す。)
[14]前記重合性基含有ポリオルガノシルセスキオキサンの数平均分子量(Mn)は、1000〜50000、1500〜10000、2000〜8000、又は2000〜7000である、[11]から[13]のいずれか一つに記載の半導体装置製造方法。
[15]前記重合性基含有ポリオルガノシルセスキオキサンについての分子量分散度(Mw/Mn)は、1.0〜4.0、1.1〜3.0、又は1.2〜2.7である、[11]から[14]のいずれか一つに記載の半導体装置製造方法。
[16]前記接着剤層の厚さは、5μm以下、4μm以下、又は3μm以下であり、0.5m以上である、[1]から[15]のいずれか一つに記載の半導体装置製造方法。
[17]前記第2ウエハは20μm以下、又は15μm以下の厚さを有する、[1]から[16]のいずれか一つに記載の半導体装置製造方法。
10,20 ウエハ
10a 回路形成面
10b 裏面
12 再配線層
12a 絶縁部
12b 配線パターン
20a 主面
20b 裏面
21 絶縁膜
30 接着剤層
H ホール
50 導電材料
51 導電部
Claims (8)
- 配線パターンを含む回路形成面を有する第1ウエハ、主面とこれとは反対の裏面を有する第2ウエハ、および、SiOC系ポリマーを含有し且つ前記第1ウエハの前記回路形成面と前記第2ウエハの前記裏面との間に介在する接着剤層、を含む積層構造を有するウエハ積層体を用意する、第1工程と、
前記ウエハ積層体において、前記第2ウエハの前記主面側の一部をマスクするマスクパターンを介しての当該第2ウエハ側からのエッチング処理により、当該第2ウエハおよび前記接着剤層を貫通して前記第1ウエハにおける前記配線パターンに至るホールを形成する、第2工程と、
前記ホールの内面に絶縁膜を形成する第3工程と、
前記ホール内の前記絶縁膜における前記配線パターン上の部分をエッチング除去する第4工程と、
前記第4工程を経た前記ウエハ積層体を、酸素プラズマ洗浄処理および/またはアルゴンスパッタリング洗浄処理を含む洗浄処理に付す、第5工程と、
前記洗浄工程を経た前記ホール内への導電材料の充填によって導電部を形成する第6工程と、を含む半導体装置製造方法。 - 前記洗浄処理は、酸素プラズマ洗浄処理およびそれより後のアルゴンスパッタリング洗浄処理を含む、請求項1に記載の半導体装置製造方法。
- 前記酸素プラズマ洗浄処理の処理時間は5〜120秒である、請求項1または2に記載の半導体装置製造方法。
- 前記アルゴンスパッタリング洗浄処理の処理時間は0.5〜5分である、請求項1から3のいずれか一つに記載の半導体装置製造方法。
- 前記洗浄処理は、酸素プラズマ洗浄処理およびアルゴンスパッタリング洗浄処理の間の硫酸洗浄処理を含む請求項1から4のいずれか一つに記載の半導体装置製造方法。
- 前記接着剤層は、重合性基含有ポリオルガノシルセスキオキサンを含む接着剤組成物の硬化物である、請求項1から5のいずれか一つに記載の半導体装置製造方法。
- 前記接着剤層は5μm以下の厚さを有する、請求項1から6のいずれか一つに記載の半導体装置製造方法。
- 前記第2ウエハは20μm以下の厚さを有する、請求項1から7のいずれか一つに記載の半導体装置製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120353A (ja) * | 1992-10-05 | 1994-04-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH1074891A (ja) * | 1997-08-07 | 1998-03-17 | Nec Corp | 半導体装置 |
JPH10135328A (ja) * | 1996-10-30 | 1998-05-22 | Kawasaki Steel Corp | 半導体装置の配線形成方法 |
US20090042365A1 (en) * | 2004-04-01 | 2009-02-12 | Rensselaer Polytechnic Institute | Three-dimensional face-to-face integration assembly |
JP2012009473A (ja) * | 2010-06-22 | 2012-01-12 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2014175542A (ja) * | 2013-03-11 | 2014-09-22 | Panasonic Corp | プラズマクリーニング装置のメンテナンス方法 |
JP2015524172A (ja) * | 2012-06-07 | 2015-08-20 | レンセレイアー ポリテクニック インスティテュート | 三次元集積におけるシリコン貫通電極(tsv)応力を低減するためのコンフォーマルコーティング弾性クッションの使用 |
JP2015164160A (ja) * | 2014-02-28 | 2015-09-10 | 国立大学法人東京工業大学 | 半導体装置及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6399512B1 (en) * | 2000-06-15 | 2002-06-04 | Cypress Semiconductor Corporation | Method of making metallization and contact structures in an integrated circuit comprising an etch stop layer |
US6355563B1 (en) * | 2001-03-05 | 2002-03-12 | Chartered Semiconductor Manufacturing Ltd. | Versatile copper-wiring layout design with low-k dielectric integration |
JP3967239B2 (ja) * | 2001-09-20 | 2007-08-29 | 株式会社フジクラ | 充填金属部付き部材の製造方法及び充填金属部付き部材 |
US6713402B2 (en) * | 2002-05-31 | 2004-03-30 | Texas Instruments Incorporated | Methods for polymer removal following etch-stop layer etch |
WO2004064147A2 (en) * | 2003-01-07 | 2004-07-29 | Applied Materials, Inc. | Integration of ald/cvd barriers with porous low k materials |
US7207339B2 (en) * | 2003-12-17 | 2007-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for cleaning a plasma enhanced CVD chamber |
JP2009194017A (ja) * | 2008-02-12 | 2009-08-27 | Elpida Memory Inc | 半導体装置の製造方法 |
TWI405321B (zh) * | 2009-09-08 | 2013-08-11 | Ind Tech Res Inst | 三維多層堆疊半導體結構及其製造方法 |
JP5578616B2 (ja) * | 2009-12-21 | 2014-08-27 | 信越化学工業株式会社 | シリコーン樹脂組成物及びその硬化物 |
US9269562B2 (en) | 2013-01-17 | 2016-02-23 | Applied Materials, Inc. | In situ chamber clean with inert hydrogen helium mixture during wafer process |
JP5975918B2 (ja) * | 2013-03-27 | 2016-08-23 | 富士フイルム株式会社 | 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法 |
US9299640B2 (en) | 2013-07-16 | 2016-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Front-to-back bonding with through-substrate via (TSV) |
JP6391999B2 (ja) | 2014-06-13 | 2018-09-19 | 株式会社ディスコ | 積層デバイスの製造方法 |
JP6429388B2 (ja) | 2015-03-19 | 2018-11-28 | 株式会社ディスコ | 積層デバイスの製造方法 |
EP3113216B1 (en) * | 2015-07-01 | 2021-05-19 | IMEC vzw | A method for bonding and interconnecting integrated circuit devices |
-
2019
- 2019-05-27 KR KR1020207036897A patent/KR20210014132A/ko not_active Application Discontinuation
- 2019-05-27 SG SG11202011164PA patent/SG11202011164PA/en unknown
- 2019-05-27 US US17/057,828 patent/US11502002B2/en active Active
- 2019-05-27 CN CN201980036187.1A patent/CN112204738A/zh active Pending
- 2019-05-27 JP JP2020522189A patent/JP7198814B2/ja active Active
- 2019-05-27 WO PCT/JP2019/020955 patent/WO2019230668A1/ja active Application Filing
- 2019-05-28 TW TW108118401A patent/TWI829697B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120353A (ja) * | 1992-10-05 | 1994-04-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH10135328A (ja) * | 1996-10-30 | 1998-05-22 | Kawasaki Steel Corp | 半導体装置の配線形成方法 |
JPH1074891A (ja) * | 1997-08-07 | 1998-03-17 | Nec Corp | 半導体装置 |
US20090042365A1 (en) * | 2004-04-01 | 2009-02-12 | Rensselaer Polytechnic Institute | Three-dimensional face-to-face integration assembly |
JP2012009473A (ja) * | 2010-06-22 | 2012-01-12 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2015524172A (ja) * | 2012-06-07 | 2015-08-20 | レンセレイアー ポリテクニック インスティテュート | 三次元集積におけるシリコン貫通電極(tsv)応力を低減するためのコンフォーマルコーティング弾性クッションの使用 |
JP2014175542A (ja) * | 2013-03-11 | 2014-09-22 | Panasonic Corp | プラズマクリーニング装置のメンテナンス方法 |
JP2015164160A (ja) * | 2014-02-28 | 2015-09-10 | 国立大学法人東京工業大学 | 半導体装置及びその製造方法 |
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