JPWO2019229593A5 - - Google Patents

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JPWO2019229593A5
JPWO2019229593A5 JP2020521636A JP2020521636A JPWO2019229593A5 JP WO2019229593 A5 JPWO2019229593 A5 JP WO2019229593A5 JP 2020521636 A JP2020521636 A JP 2020521636A JP 2020521636 A JP2020521636 A JP 2020521636A JP WO2019229593 A5 JPWO2019229593 A5 JP WO2019229593A5
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JP2020521636A
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JPWO2019229593A1 (ja
JP7267270B2 (ja
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Priority claimed from PCT/IB2019/054254 external-priority patent/WO2019229593A1/ja
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JP2020521636A 2018-05-31 2019-05-23 半導体装置 Active JP7267270B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018104736 2018-05-31
JP2018104736 2018-05-31
PCT/IB2019/054254 WO2019229593A1 (ja) 2018-05-31 2019-05-23 半導体装置

Publications (3)

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JPWO2019229593A1 JPWO2019229593A1 (ja) 2021-07-08
JPWO2019229593A5 true JPWO2019229593A5 (https=) 2022-05-18
JP7267270B2 JP7267270B2 (ja) 2023-05-01

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JP2020521636A Active JP7267270B2 (ja) 2018-05-31 2019-05-23 半導体装置

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US (1) US11335813B2 (https=)
JP (1) JP7267270B2 (https=)
CN (1) CN112236869B (https=)
WO (1) WO2019229593A1 (https=)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP7581209B2 (ja) * 2019-08-08 2024-11-12 株式会社半導体エネルギー研究所 半導体装置
WO2021130590A1 (ja) 2019-12-27 2021-07-01 株式会社半導体エネルギー研究所 撮像装置、および電子機器
US12120443B2 (en) 2020-01-21 2024-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP7356393B2 (ja) * 2020-04-10 2023-10-04 ルネサスエレクトロニクス株式会社 半導体装置
KR20230039668A (ko) * 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP7842758B2 (ja) * 2021-06-30 2026-04-08 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の駆動方法
CN120814176A (zh) * 2023-03-08 2025-10-17 索尼半导体解决方案公司 振荡电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3315652B2 (ja) * 1998-09-07 2002-08-19 キヤノン株式会社 電流出力回路
JP4895778B2 (ja) * 2006-11-28 2012-03-14 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US9054695B2 (en) * 2013-10-01 2015-06-09 Texas Instruments Incorporated Technique to realize high voltage IO driver in a low voltage BiCMOS process
CN107111985B (zh) * 2014-12-29 2020-09-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP6674838B2 (ja) * 2015-05-21 2020-04-01 株式会社半導体エネルギー研究所 電子装置
JP6906978B2 (ja) * 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
CN108701480B (zh) 2016-03-10 2022-10-14 株式会社半导体能源研究所 半导体装置
US10120470B2 (en) * 2016-07-22 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device
US11556771B2 (en) * 2017-04-10 2023-01-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor neural network device including a synapse circuit comprising memory cells and an activation function circuit
JP6986909B2 (ja) * 2017-09-06 2021-12-22 株式会社半導体エネルギー研究所 半導体装置
JP2019046374A (ja) 2017-09-06 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子部品、電子機器、及び半導体装置の駆動方法

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