JPWO2019207404A5 - - Google Patents

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Publication number
JPWO2019207404A5
JPWO2019207404A5 JP2020515309A JP2020515309A JPWO2019207404A5 JP WO2019207404 A5 JPWO2019207404 A5 JP WO2019207404A5 JP 2020515309 A JP2020515309 A JP 2020515309A JP 2020515309 A JP2020515309 A JP 2020515309A JP WO2019207404 A5 JPWO2019207404 A5 JP WO2019207404A5
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Japan
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wiring
potential
circuit
memory cell
electrically connected
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JP2020515309A
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Japanese (ja)
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JP7337782B2 (ja
JPWO2019207404A1 (ja
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Priority claimed from PCT/IB2019/053066 external-priority patent/WO2019207404A1/ja
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JP2020515309A 2018-04-26 2019-04-15 半導体装置 Active JP7337782B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018084713 2018-04-26
JP2018084713 2018-04-26
PCT/IB2019/053066 WO2019207404A1 (ja) 2018-04-26 2019-04-15 半導体装置

Publications (3)

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JPWO2019207404A1 JPWO2019207404A1 (ja) 2021-05-27
JPWO2019207404A5 true JPWO2019207404A5 (https=) 2022-04-06
JP7337782B2 JP7337782B2 (ja) 2023-09-04

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JP2020515309A Active JP7337782B2 (ja) 2018-04-26 2019-04-15 半導体装置

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US (1) US12118333B2 (https=)
JP (1) JP7337782B2 (https=)
WO (1) WO2019207404A1 (https=)

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Publication number Priority date Publication date Assignee Title
US11515873B2 (en) * 2018-06-29 2022-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TWI846810B (zh) * 2019-02-15 2024-07-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
US12099543B2 (en) 2019-04-26 2024-09-24 Semiconductor Energy Laboratory Co., Ltd. Document search system and document search method
US11888446B2 (en) 2019-05-08 2024-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7123860B2 (ja) * 2019-06-17 2022-08-23 株式会社東芝 演算装置
WO2020254914A1 (ja) 2019-06-21 2020-12-24 株式会社半導体エネルギー研究所 酸化物半導体を用いる記憶回路
EP3839833A1 (en) * 2019-12-16 2021-06-23 ams International AG Neural amplifier, neural network and sensor device
TWI865775B (zh) * 2020-05-15 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
US12321852B2 (en) * 2020-12-26 2025-06-03 International Business Machines Corporation Filtering hidden matrix training DNN
KR20250025355A (ko) * 2022-06-17 2025-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2025181636A1 (ja) * 2024-03-01 2025-09-04 株式会社半導体エネルギー研究所 半導体装置、演算装置及び電子機器

Family Cites Families (19)

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JP3533074B2 (ja) 1997-10-20 2004-05-31 日本電気株式会社 Ｖｒａｍ機能内蔵のｌｅｄパネル
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
KR101371604B1 (ko) 2007-11-26 2014-03-06 삼성디스플레이 주식회사 액정 표시 장치
JP5491833B2 (ja) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
EP2494597A4 (en) 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
JP2012058335A (ja) 2010-09-06 2012-03-22 Seiko Epson Corp 電気光学装置および電子機器
KR20120110387A (ko) 2011-03-29 2012-10-10 삼성전자주식회사 화소 회로 및 화소 회로의 구동 방법
CN106462020B (zh) 2014-04-25 2019-08-23 夏普株式会社 液晶显示装置
JP6674838B2 (ja) 2015-05-21 2020-04-01 株式会社半導体エネルギー研究所 電子装置
JP2017027012A (ja) 2015-07-24 2017-02-02 株式会社ジャパンディスプレイ 表示装置
US10140940B2 (en) 2015-07-24 2018-11-27 Japan Display Inc. Display device
US9934826B2 (en) 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102472837B1 (ko) 2017-08-11 2022-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR20250022260A (ko) 2017-08-31 2025-02-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP2019045614A (ja) 2017-08-31 2019-03-22 株式会社半導体エネルギー研究所 表示装置および電子機器
JP2019045613A (ja) 2017-08-31 2019-03-22 株式会社半導体エネルギー研究所 表示装置および電子機器
WO2019053549A1 (en) 2017-09-15 2019-03-21 Semiconductor Energy Laboratory Co., Ltd. DISPLAY DEVICE AND ELECTRONIC DEVICE

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